S6A13
2002-01-23
1
TOSHIBA Thyristor Silicon Planar Type
S6A13
Condenser Discharge Control Applications
FWD included between cathode and anode
Critical rate of rise of ON-state current: di/dt = 750 A/s
Repetitive peak surge ON-state current: I
TRM
= 500 A (t
w
= 2 s)
Repetitive peak OFF-state voltage: V
DRM
= 800 V
Gate trigger current: I
GT
= 30 mA max.
Maximum Ratings
Characteristics Symbol
Rating
Unit
Repetitive peak OFF-state voltage
V
DRM
800 V
Repetitive peak surge ON-state
current (Note)
I
TRM
500 A
Repetitive peak surge forward current
(Note)
I
FRM
500 A
Critical rate of rise of ON-state current
(Note)
di/dt 750
A/
ms
Peak gate power dissipation
P
GM
5 W
Average gate power dissipation
P
G (AV)
0.5
W
Peak forward gate voltage
V
FGM
10
V
Peak reverse gate voltage
V
RGM
-5
V
Peak forward gate current
I
GM
2
A
Junction temperature
T
j
-40~125 C
Storage temperature range
T
stg
-40~150 C
Note: V
D
<
= 0.8 rated, Tc = 85C, i
gp
>
= 60 mA, t
gw
>
= 10
m
s, t
gr
<
= 150 ns
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA 13-10J1B
Weight: 1.5 g (typ.)
1 MARK S6A13
TYPE
NAME
S6A13
2
Lot Number
Month (starting from alphabet A)
Year (last decimal digit of the current year)
2
1
S6A13
2002-01-23
2
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Repetitive peak OFF-state current
I
DRM
V
DRM
= Rated
10 mA
Peak ON-state voltage (thyristor)
V
TM
I
TM
= 25 A
1.5 V
Peak forward voltage (diode)
V
FM
I
FM
= 25 A
2.0 V
Gate trigger voltage
V
GT
1.0 V
Gate trigger current
I
GT
V
D
= 6 V, R
L
= 10 W
30 mA
Gate non-trigger voltage
V
GD
V
D
= Rated, Tc = 125C
0.2
V
Critical rate of rise of OFF-state voltage
dv/dt
V
DRM
= Rated, Tc = 125C
Exponential Rise
50 V/ms
Holding current
I
H
V
D
= 6 V, I
TM
= 1 A
35 mA
Thermal resistance (junction to ambient)
R
th (j-a)
DC
70
C/W
Equivalent Circuit
0.5 I
P
t
w
= 2 ms
t
I
P
0.5 I
P
di/dt
=
t
t
w
= p
LC
, I
P
=
L/C
V
D
Test Circuit Examples
C
R L
V
D
S6
A1
3
GATE
CATHODE
ANODE
S6A13
2002-01-23
3
Instantan
eo
us O
N
-s
t
a
t
e
cu
rr
ent
i
T
(A
)
i
GT(tw)
/I
GT
Case temperature Tc (C)
I
GT
(Tc)/I
GT
(Tc
= 25C) Tc
(typical)
I
GT
(T
c
)
/I
GT
(T
c
=
25
C
)
Case temperature Tc (C)
V
GT
(Tc)/V
GT
(Tc
= 25C) Tc
(typical)
V
GT
(T
c
)
/V
GT
(T
c
=
25
C
)
Case temperature Tc (C)
I
H
(Tc)/I
H
(Tc
= 25C) Tc
(typical)
I
H
(T
c
)
/I
H
(T
c
=
25
C
)
Gate trigger pulse width t
w
(
ms)
Pulse trigger characteristics
(typical)
Instantaneous ON-state voltage v
T
(V)
i
T
v
T
(thyristor)
Instantaneous forward voltage vF (V)
i
F
v
F
(diode)
Instantan
eo
us f
o
rw
ar
d cu
rr
ent
i F
(A
)
0.0
-60
2.5
2.0
1.5
1.0
0.5
140
100
60
20
-20
VD = 6 V
RL = 10 W
2.0
0.0
-60 140
100
60
20
-20
0.5
1.0
1.5
VD = 6 V
RL = 10 W
140
100
60
20
-20
VD = 6 V
ITM = 1 A
0.0
2.5
2.0
1.5
1.0
0.5
-60
5
0
0.1 1 10 100
1
2
3
4
Resistance load
VD = 6 V
RL = 10 W
Tc
= 25C
Rectangular waveform
tw
iGT
1
0.0
1000
100
10
1.0 1.5
2.5 3.0
25C
Tj
= 125C
0.5 2.0
1
0.0
1000
100
10
2.0 3.0
5.0 6.0
1.0 4.0
25C
Tj
= 125C
S6A13
2002-01-23
4
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
PDF 
ZIP