2SD2414(SM)
2003-02-04
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2414(SM)
High Current Switching Applications
Power Amplifier Applications
Low collector saturation voltage: V
CE (sat)
= 0.5 V (max) (at I
C
= 4 A)
Maximum Ratings
(Ta = 25C)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
100 V
Collector-emitter voltage
V
CEO
80 V
Emitter-base voltage
V
EBO
5 V
Collector current
I
C
7
A
Base current
I
B
1 A
Ta = 25C
1.5
Collector power
dissipation
Tc = 25C
P
C
40
W
Junction temperature
T
j
150 C
Storage temperature range
T
stg
-55 to 150
C
Unit: mm
JEDEC
JEITA
TOSHIBA 2-10S2
Weight: 1.4 g (typ.)
2SD2414(SM)
2003-02-04
2
Electrical Characteristics
(Ta = 25C)
Characteristics Symbol Test
Condition Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 100 V, I
E
= 0
5 A
Emitter cut-off current
I
EBO
V
EB
= 5 V, I
C
= 0
5 A
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 50 mA, I
B
= 0
80
V
h
FE (1)
V
CE
= 1 V, I
C
= 1 A
100
320
DC current gain
h
FE (2)
V
CE
= 1 V, I
C
= 4 A
30
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 4 A, I
B
= 0.4 A
0.25 0.5 V
Base-emitter saturation voltage
V
BE (sat)
I
C
= 4 A, I
B
= 0.4 A
0.9 1.4 V
Transition frequency
f
T
V
CE
= 4 V, I
C
= 1 A
10 MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
200 pF
Turn-on time
t
on
0.4
Storage time
t
stg
2.5
Switching time
Fall time
t
f
I
B1
= -I
B2
= 0.3 A, duty cycle 1%
0.5
s
Marking
Explanation of Lot No.
I
B1
20 s
V
CC
30 V
Output
10
I
B2
I
B1
Input
I
B2
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
D2414
Product No.
Lot No.
2SD2414(SM)
2003-02-04
4
Base-emitter voltage V
BE
(V)
I
C
V
BE
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Co
lle
ct
o
r
cu
r
r
e
n
t I
C
(A
)
Collector-emitter voltage V
CE
(V)
Safe Operating Area
Collector current I
C
(A)
V
BE (sat)
I
C
B
a
se-
e
mi
tte
r sa
tu
rati
on v
o
l
t
age
V
BE (sat)
(V
)
0.1
0.02 0.3
1
3
3
5
Tc = -55C
25
Common emitter
IC/IB = 10
100
0.1
0.5
10
0.3
1
8
0
0
6
4
2
0.8 1.2 1.6 2.0
0.4
Common emitter
VCE = 1 V
Tc = 100C
25
-55
0.1
5
30
50
100
0.3
0.5
1
10
*: Single nonrepetitive pulse
Tc = 25C
Curves must be derated linearly with
increase in temperature.
IC max
(continuous)
IC max (pulsed)*
VCEO max
DC operation
Tc = 25C
1 ms*
10 ms*
5
3
3
100 ms*
10
2SD2414(SM)
2003-02-04
5
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000707EAA
RESTRICTIONS ON PRODUCT USE
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