2SA2058
2001-10-29
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2058
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: h
FE
= 200 to 500 (I
C
= -0.2 A)
Low collector-emitter saturation voltage: V
CE (sat)
= -0.19 V (max)
High-speed switching: t
f
= 25 ns (typ.)
Maximum Ratings
(Ta
=
=
=
=
25C)
Characteristics Symbol
Rating
Unit
Collector-base voltage
V
CBO
-20 V
Collector-emitter voltage
V
CEO
-10 V
Emitter-base voltage
V
EBO
-7 V
DC I
C
-1.5
Collector current
Pulse I
CP
-2.5
A
Base current
I
B
-150 mA
DC 500
Collector power
dissipation
t
= 10 s
P
C
(Note)
750
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55 to 150
C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics
(Ta
=
=
=
=
25C)
Characteristics Symbol
Test
Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= -20 V, I
E
= 0
-100 nA
Emitter cut-off current
I
EBO
V
EB
= -7 V, I
C
= 0
-100 nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= -10 mA, I
B
= 0
-10
V
h
FE
(1)
V
CE
= -2 V, I
C
= -0.2 A
200
500
DC current gain
h
FE
(2)
V
CE
= -2 V, I
C
= -0.6 A
125
Collector-emitter saturation voltage
V
CE (sat)
I
C
= -0.6 A, I
B
= -20 mA
-0.19 V
Base-emitter saturation voltage
V
BE (sat)
I
C
= -0.6 A, I
B
= -20 mA
-1.10 V
Collector output capacitance
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz
12
pF
Rise time
t
r
50
Storage time
t
stg
115
Switching time
Fall time
t
f
See Figure 1 circuit diagram.
V
CC
- -6 V, R
L
= 10
-I
B1
= I
B2
= -20 mA
25
ns
Unit: mm
JEDEC
JEITA
TOSHIBA 2-3S1A
Weight: 0.01 g (typ.)
2SA2058
2001-10-29
2
Marking
W M
Figure 1 Switching Time Test Circuit &
Timing Chart
I
B2
I
B1
20
s
Output
Input
I
B2
I
B1
R
L
V
CC
Duty cycle
< 1%
2SA2058
2001-10-29
3
Co
lle
ct
o
r
cu
r
r
e
n
t
I
C
(A
)
B
a
se-
e
m
i
tte
r sa
tu
rati
on v
o
lta
ge
V
BE (sat)
(V
)
Collector-emitter voltage V
CE
(V)
I
C
V
CE
Co
lle
ct
o
r
cu
r
r
e
n
t
I
C
(A
)
Collector current I
C
(A)
h
FE
I
C
D
C
c
u
rr
en
t
g
a
i
n h
FE
Collector current I
C
(A)
V
CE (sat)
I
C
C
o
l
l
e
ct
or
-em
i
tte
r s
a
tu
rati
on
vol
t
age
V
CE (sat)
(V
)
Collector current I
C
(A)
V
BE (sat)
I
C
Base-emitter voltage V
BE
(V)
I
C
V
BE
-0.01
-0.001
-0.01
-0.1
-1
-0.1
-1
-10
Common emitter
IC/IB = 30
Single nonrepetitive pulse
Ta
= 100C
-55
25
-0.001
-0.001
-0.01
-0.1
-1
-0.01
-0.1
-1
Common emitter
IC/IB = 30
Single nonrepetitive pulse
25
Ta
= 100C
-55
0
0
-0.4
-0.4
-0.8
-1.2
-1.6
-0.8
-1.2
-1.6
-2.0
Common emitter
VCE = -2 V
Single nonrepetitive
pulse
Ta
= 100C
-55
25
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
IB = -2 mA
Common emitter
Ta
= 25C
Single nonrepetitive
pulse
-4
-6
-8
-10
-20
-40
-60
-80
10
-0.001
-0.01
-0.1
-1
100
1000
10000
Common emitter
VCE = -2 V
Single nonrepetitive
pulse
25
Ta
= 100C
-55
2SA2058
2001-10-29
4
Pulse width t
w
(s)
r
th
t
w
T
r
ansi
e
nt the
r
m
a
l
r
e
si
st
anc
e
r
th
(
C
/
W
)
Collector-emitter voltage V
CE
(V)
Safe Operating Area
Co
lle
ct
o
r
cu
r
r
e
n
t
I
C
(A
)
1
0.001 0.01 0.1
1
10 100 1000
10
1000
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
= 25C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm
2
)
100
-0.01
-0.1
-1
-10
-100
-0.1
-1
-10
IC max (pulsed)
DC operation *
(Ta
= 25C)
V
CEO
ma
x
IC max (continuous)
10 s
*
10 ms
1 ms
100 ms
*
: Single nonrepetitive pulse
Ta
= 25C
Note that the curves for
100 ms*, 10 s* and DC
operation* will be different when
the devices aren't mounted on an
FR4 board (glass epoxy, 1.6 mm
thick, Cu area: 645 mm
2
). These
characteristic curves must be
derated linearly with increase in
temperature.
2SA2058
2001-10-29
5
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability
Handbook" etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer's own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
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