TELEFUNKEN Semiconductors
TLME3100
Rev. A2: 20.10.1995
1 (6)
High Intensity SMD LED
Color
Type
Technology
Angle of Half Intensity
Yellow
TLME3100
AlInGaP on GaAs
60
Description
This device has been designed to meet the increasing de-
mand for AlInGaP technology.
The package of the TLME3100 is the PLCC2 (equiva-
lent to a size B tantalum capacitor).
It consists of a lead frame which is surrounded with a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
Features
D SMD LED with exceptional brightness
D Luminous intensity categorized
D Compatible with automatic placement equipment
D EIA and ICE standard package
D Compatible with infrared, vapor phase and wave
solder processes according to CECC
D Available in 8 mm tape
D Low profile package
D Non-diffused lens: excellent for coupling to light
pipes and backlighting
D Low power consumption
D Luminous intensity ratio in one packaging unit
I
Vmax
/I
Vmin
x 2.0
94 8553
Applications
Automotive: backlighting in dashboards and switches
Telecommunication: indicator and backlighting in telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
TELEFUNKEN Semiconductors
TLME3100
Rev. A2: 20.10.1995
2 (6)
Absolute Maximum Ratings
T
amb
= 25
C, unless otherwise specified
TLME3100
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V
R
5
V
DC forward current
T
amb
60
C
I
F
30
mA
Surge forward current
t
p
10
ms
I
FSM
0.1
A
Power dissipation
T
amb
x 60C
P
V
80
mW
Junction temperature
T
j
100
C
Operating temperature range
T
amb
40 to +100
C
Storage temperature range
T
stg
55 to +100
C
Soldering temperature
t
5 s
T
sd
260
C
Thermal resistance junction/ambient
mounted on PC board
(pad size > 16 mm
2
)
R
thJA
400
K/W
Optical and Electrical Characteristics
T
amb
= 25
C, unless otherwise specified
Yellow (TLME3100 )
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Luminous intensity
I
F
= 10 mA
I
V
25
50
mcd
Dominant wavelength
I
F
= 10 mA
l
d
581
588
594
nm
Peak wavelength
I
F
= 10 mA
l
p
590
nm
Angle of half intensity
I
F
= 10 mA
60
deg
Forward voltage
I
F
= 20 mA
V
F
2
2.6
V
Reverse voltage
I
R
= 10
mA
V
R
5
V
Junction capacitance
V
R
= 0, f = 1 MHz
C
j
15
pF
TELEFUNKEN Semiconductors
TLME3100
Rev. A2: 20.10.1995
3 (6)
Typical Characteristics (T
amb
= 25
_C, unless otherwise specified)
0
20
40
60
80
0
25
50
75
100
125
P
Power Dissipation ( mW
)
V
T
amb
Ambient Temperature (
C )
100
95 10887
Figure 1. Power Dissipation vs. Ambient Temperature
0
10
20
30
40
60
0
20
40
60
80
I Forward Current ( mA
)
F
T
amb
Ambient Temperature (
C )
100
95 10894
50
Figure 2. Forward Current vs. Ambient Temperature
0.4
0.2
0
0.2
0.4
I Relative Luminous Intensity
v rel
0.6
95 10319
0.6
0.9
0.8
0
30
10
20
40
50
60
70
80
0.7
1.0
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
1
10
100
1
1.5
2.0
2.5
3.0
V
F
Forward Voltage ( V )
95 10878
F
I Forward Current ( mA
)
Figure 4. Forward Current vs. Forward Voltage
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
10 20 30 40 50 60 70 80 90 100
T
amb
Ambient Temperature (
C )
95 10880
I Relative Luminous Intensity
V
rel
I
F
= 10 mA
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
10
100
96 11589
I Relative Luminous Intensity
V
rel
t
p
/T
I
F
(mA)
50
5
20
2
5
2
1
0.5
0.2
10
Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
TELEFUNKEN Semiconductors
TLME3100
Rev. A2: 20.10.1995
4 (6)
0.01
0.10
1.00
10.00
1
10
100
I
F
Forward Current ( mA )
96 11588
I Relative Luminous Intensity
V
rel
Figure 7. Relative Luminous Intensity vs. Forward Current
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
550 560 570 580 590 600 610 620 630 640 650
l Wavelength ( nm )
95 10881
I Relative Luminous Intensity
V
rel
I
F
= 10 mA
Figure 8. Relative Luminous Intensity vs. Wavelength
PCB Layout in mm
95 10966
TELEFUNKEN Semiconductors
TLME3100
Rev. A2: 20.10.1995
5 (6)
Dimensions in mm
95 11314
PDF 
ZIP