TE13004D
TE13005D
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
1 (9)
Silicon NPN High Voltage Switching Transistor
Features
D Monolithic integrated C-E-free-wheel diode
D HIGH SPEED technology
D Planar passivation
D Very short switching times
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D High reverse voltage
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
14283
Absolute Maximum Ratings
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Value
Unit
Collector-emitter voltage
TE13004D
V
CEO
300
V
g
TE13005D
V
CEO
400
V
TE13004D
V
CES
600
V
TE13005D
V
CES
700
V
Emitter-base voltage
V
EBO
9
V
Collector current
I
C
6
A
Collector peak current
I
CM
8
A
Base current
I
B
2
A
Base peak current
I
BM
4
A
Total power dissipation
T
case
25
C
P
tot
57
W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 to +150
C
Maximum Thermal Resistance
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction case
R
thJC
2.2
K/W
TE13004D
TE13005D
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
2 (9)
Electrical Characteristics
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Transistor
Collector cut-off current
V
CE
= 600 V
TE13004D
I
CES
50
mA
V
CE
= 700 V
TE13005D
I
CES
50
mA
V
CE
= 600 V; T
case
= 150
C TE13004D
I
CES
0.5
mA
V
CE
= 700 V; T
case
= 150
C TE13005D
I
CES
0.5
mA
Collector-emitter
breakdown voltage
I
C
= 100 mA; L = 125 mH;
I
= 100 mA
TE13004D V
(BR)CEO
300
V
breakdown voltage
(figure 1)
I
measure
= 100 mA
TE13005D V
(BR)CEO
400
V
Emitter-base breakdown
voltage
I
E
= 1 mA
V
(BR)EBO
9
V
Collector-emitter
saturation voltage
I
C
= 2 A; I
B
= 0.4 A
V
CEsat
0.5
V
Base-emitter saturation
voltage
I
C
= 2 A; I
B
= 0.4 A
V
BEsat
1.6
V
DC forward current
V
CE
= 2 V; I
C
= 10 mA
h
FE
10
transfer ratio
V
CE
= 2 V; I
C
= 1 A
h
FE
10
V
CE
= 2 V; I
C
= 4 A
h
FE
4
Dynamic saturation
I
C
= 2 A; I
B
= 0.2 A; t = 1
ms
V
CEsatdyn
2.5
V
y
voltage
I
C
= 2 A; I
B
= 0.2 A; t = 3
ms
V
CEsatdyn
0.6
V
Gain bandwidth product
V
CE
= 10 V; I
C
= 500 mA;
f = 1 MHz
f
T
4
MHz
Free-wheel diode
Forward voltage
I
F
= 2 A
V
F
1.2
1.5
V
Turn-on transient peak
voltage
I
F
= 2 A; di
F
/dt = 10 A/
ms
V
FP
4
5
V
Reverse recovery cur-
rent
I
F
= 2 A; di
F
/dt = 5 A/
ms;
V
S
= 200 V
I
RM
4
A
TE13004D
TE13005D
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
3 (9)
Switching Characteristics
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Resistive load (figure 3)
Turn on time
I
C
= 2 A; I
B1
= I
B2
= 0.4 A;
t
on
0.25
0.4
ms
Storage time
C
;
B1
B2
;
V
S
= 125 V
t
s
1.5
2.5
ms
Fall time
t
f
0.15
0.3
ms
Inductive load (figure 4)
Storage time
I
C
= 2 A; I
B1
= 0.4 A;
L = 200
mH; V
l
= 300 V;
t
s
1.2
2
ms
Cross over time
L = 200
mH; V
clamp
= 300 V;
V
BE
= 5 V; T
case
= 100
C
t
c
0.4
0.7
ms
Free-wheel diode
Reverse recovery time
I
F
= 0.5 A; I
R
= 1 A; i
R
= 0.25 A
t
rr
0.7
1
ms
Forward recovery time
I
F
= 2 A; di
F
/dt = 10 A/
ms
t
fr
0.4
ms
Reverse recovery time
I
F
= 2 A; di
F
/dt = 5 A/
ms
t
rr
1.1
ms
y
F
;
F
m
t
IRM
0.9
ms
V
FP
100%
110%
t
fr
V
F
t
95 9666
Figure 1. Turn on transient peak voltage
TE13004D
TE13005D
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
4 (9)
+
3 Pulses
94 8863
t
p
T +
0.1
t
p
+ 10 ms
V
S2
+ 10 V
I
B
w
I
C
5
I
C
L
C
V
S1
+
V
(BR)CEO
I
(BR)R
100 m
W
I
C
V
CE
V
(BR)CEO
I
measure
0 to 30 V
Figure 2. Test circuit for V
(BR)CE0
0
t
I
C
V
CE
R
C
V
CC
I
B
V
BB
R
B
I
B1
94 8852
+
(1)
(1) Fast electronic switch
I
B
I
B1
I
B2
I
C
0.9 I
C
0.1 I
C
t
t
s
t
off
t
f
t
r
t
d
t
on
Figure 3. Test circuit for switching characteristics resistive load
TE13004D
TE13005D
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
5 (9)
0
0.9 I
C
0.1 I
C
t
I
C
V
CE
V
CC
I
B
V
BB
R
B
I
B1
V
clamp
+
L
C
94 8853
(1)
(1) Fast electronic switch
(2) Fast recovery rectifier
(2)
I
B
I
B1
I
B2
I
C
t
t
r
t
s
Figure 4. Test circuit for switching characteristics inductive load
PDF 
ZIP