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Электронный компонент: BUF653

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BUF653
TELEFUNKEN Semiconductors
Rev. A3, 18-Jul-97
1 (8)
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
14283
Absolute Maximum Ratings
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
400
V
g
V
CEW
500
V
V
CES
700
V
Emitter-base voltage
V
EBO
11
V
Collector current
I
C
11
A
Collector peak current
I
CM
16.5
A
Base current
I
B
5.5
A
Base peak current
I
BM
8
A
Total power dissipation
T
case
25
C
P
tot
70
W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 to +150
C
Maximum Thermal Resistance
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction case
R
thJC
1.78
K/W
BUF653
TELEFUNKEN Semiconductors
Rev. A3, 18-Jul-97
2 (8)
Electrical Characteristics
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector cut-off current
V
CE
= 700 V
I
CES
50
mA
V
CE
= 700 V; T
case
= 150
C
I
CES
0.5
mA
Collector-emitter breakdown
voltage (figure 1)
I
C
= 300 mA; L = 125 mH;
I
measure
= 100 mA
V
(BR)CEO
400
V
Emitter-base breakdown voltage
I
E
= 1 mA
V
(BR)EBO
11
V
Collector-emitter saturation
I
C
= 1.8 A; I
B
= 0.5 A
V
CEsat
0.2
0.3
V
voltage
I
C
= 5.5 A; I
B
= 1.8 A
V
CEsat
0.4
0.6
V
Base-emitter saturation voltage
I
C
= 1.8 A; I
B
= 0.5 A
V
BEsat
0.9
1.1
V
g
I
C
= 5.5 A; I
B
= 1.8 A
V
BEsat
1.1
1.2
V
DC forward current transfer ratio
V
CE
= 2 V; I
C
= 10 mA
h
FE
15
25
V
CE
= 2 V; I
C
= 1.8 A
h
FE
15
25
V
CE
= 2 V; I
C
= 5.5 A
h
FE
6
10
V
CE
= 5 V; I
C
= 11 A
h
FE
4
Collector-emitter working voltage
V
S
= 50 V; L = 1 mH; I
C
= 11 A;
I
B1
= 3.7 A; I
B2
= 1.1 A;
V
BB
= 5 V
V
CEW
500
V
Dynamic saturation voltage
I
C
= 5.5 A; I
B
= 1.1 A; t = 1
ms
V
CEsatdyn
8
13
V
y
g
I
C
= 5.5 A; I
B
= 1.1 A; t = 3
ms
V
CEsatdyn
2
3
V
Gain bandwidth product
I
C
= 500 mA; V
CE
= 10 V;
f = 1 MHz
f
T
4
MHz
BUF653
TELEFUNKEN Semiconductors
Rev. A3, 18-Jul-97
3 (8)
Switching Characteristics
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Resistive load (figure 2)
Turn on time
I
C
= 1.8 A; I
B1
= 0.5 A; I
B2
= 0.9 A;
t
on
0.15
0.25
ms
Storage time
C
;
B1
;
B2
;
V
S
= 250 V
t
s
2.9
3.6
ms
Fall time
t
f
0.3
0.4
ms
Turn on time
I
C
= 5.5 A; I
B1
= 1.1 A; I
B2
= 2.8 A;
t
on
0.5
0.7
ms
Storage time
C
;
B1
;
B2
;
V
S
= 250 V
t
s
1.3
1.7
ms
Fall time
t
f
0.1
0.15
ms
Inductive load (figure 3)
Storage time
I
C
= 1.8 A; I
B1
= 0.5 A; I
B2
= 0.9 A;
t
s
3
3.8
ms
Fall time
C
;
B1
;
B2
;
V
clamp
= 300 V; L = 200
mH
t
f
0.1
0.2
ms
Storage time
I
C
= 5.5 A; I
B1
= 1.1 A; I
B2
= 2.8 A;
t
s
1.4
1.8
ms
Fall time
C
;
B1
;
B2
;
V
clamp
= 300 V; L = 200
mH
t
f
0.06
0.1
ms
+
3 Pulses
94 8863
t
p
T +
0.1
t
p
+ 10 ms
V
S2
+ 10 V
I
B
w
I
C
5
I
C
L
C
V
S1
+
V
(BR)CEO
I
(BR)R
100 m
W
I
C
V
CE
V
(BR)CEO
I
measure
0 to 30 V
Figure 1. Test circuit for V
(BR)CE0
BUF653
TELEFUNKEN Semiconductors
Rev. A3, 18-Jul-97
4 (8)
0
t
I
C
V
CE
R
C
V
CC
I
B
V
BB
R
B
I
B1
94 8852
+
(1)
(1) Fast electronic switch
I
B
I
B1
I
B2
I
C
0.9 I
C
0.1 I
C
t
t
s
t
off
t
f
t
r
t
d
t
on
Figure 2. Test circuit for switching characteristics resistive load
0
0.9 I
C
0.1 I
C
t
I
C
V
CE
V
CC
I
B
V
BB
R
B
I
B1
V
clamp
+
L
C
94 8853
(1)
(1) Fast electronic switch
(2) Fast recovery rectifier
(2)
I
B
I
B1
I
B2
I
C
t
t
r
t
s
Figure 3. Test circuit for switching characteristics inductive load
BUF653
TELEFUNKEN Semiconductors
Rev. A3, 18-Jul-97
5 (8)
Typical Characteristics (T
case
= 25
_C unless otherwise specified)
0
1
2
3
4
5
6
7
8
9
10
11
12
0
100
200
300
400
500
600
V
CE
Collector Emitter Voltage ( V )
13676
I Collector Current (
A
)
C
0.1 x I
C
< I
B2
< 0.5 x I
C
V
CEsat
< 2 V
Figure 4. V
CEW
Diagram
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
V
CE
Collector Emitter Voltage ( V )
13678
I Collector Current (
A
)
C
1A
I
B
=0.1A
0.4A
0.8A
0.6A
0.2A
Figure 5. I
C
vs. V
CE
1
10
100
0.01
0.10
1.00
10.00
100.00
I
C
Collector Current ( A )
13680
5V
h Forward DC Current
T
ransfer
Ratio
FE
V
CE
=2V
10V
Figure 6. h
FE
vs. I
C
0.01
0.10
1.00
10.00
100.00
0
25
50
75
100
125
150
T
case
Case Temperature (
C )
13677
P
T
otal Power Dissipation (
W
)
tot
12.5K/W
25K/W
50K/W
R
thJA
=85K/W
1.78K/W
Figure 7. P
tot
vs.T
case
0.01
0.10
1.00
10.00
0.01
0.10
1.00
10.00
I
B
Base Current ( A )
13679
V
Collector Emitter Saturation
V
oltage (
V
)
CEsat
I
C
=1A
2A
4A
6A
8A
Figure 8. V
CEsat
vs. I
B
1
10
100
0.01
0.10
1.00
10.00
100.00
I
C
Collector Current ( A )
13681
h Forward DC Current
T
ransfer
Ratio
FE
V
CE
=2V
T
j
= 125
C
75
C
25
C
Figure 9. h
FE
vs. I
C