BUF636A
TELEFUNKEN Semiconductors
Rev. A2, 26-Sep-97
1 (8)
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
14283
Absolute Maximum Ratings
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
450
V
g
V
CEW
550
V
V
CES
1000
V
Emitter-base voltage
V
EBO
11
V
Collector current
I
C
5
A
Collector peak current
I
CM
7.5
A
Base current
I
B
2.5
A
Base peak current
I
BM
4
A
Total power dissipation
T
case
25
C
P
tot
50
W
Junction temperature
T
j
150
C
Storage temperature range
T
stg
65 to +150
C
Maximum Thermal Resistance
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction case
R
thJC
2.5
K/W
BUF636A
TELEFUNKEN Semiconductors
Rev. A2, 26-Sep-97
2 (8)
Electrical Characteristics
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector cut-off current
V
CES
= 1000 V
I
CES
50
mA
V
CES
= 1000 V; T
case
= 150
C
I
CES
0.5
mA
Collector-emitter breakdown
voltage (figure 1)
I
C
= 300 mA; L = 125 mH;
I
measure
= 100 mA
V
(BR)CEO
450
V
Emitter-base breakdown voltage
I
E
= 1 mA
V
(BR)EBO
11
V
Collector-emitter saturation
I
C
= 0.8 A; I
B
= 0.2 A
V
CEsat
0.1
0.2
V
voltage
I
C
= 2.5 A; I
B
= 0.8 A
V
CEsat
0.2
0.4
V
Base-emitter saturation voltage
I
C
= 0.8 A; I
B
= 0.2 A
V
BEsat
0.9
1
V
g
I
C
= 2.5 A; I
B
= 0.8 A
V
BEsat
1
1.2
V
DC forward current transfer ratio
V
CE
= 1 V; I
C
= 2 A
h
FE
6
V
CE
= 2 V; I
C
= 0.8 A
h
FE
15
21
V
CE
= 2 V; I
C
= 0.8 A
h
FE
15
21
V
CE
= 2 V; I
C
= 2.5 A
h
FE
7
10
V
CE
= 5 V; I
C
= 5 A
h
FE
4
6
Collector-emitter working voltage
V
S
= 50 V; L = 1 mH; I
C
= 5 A;
I
B1
= 1.7 A; I
B2
= 0.5 A;
V
BB
= 5 V
V
CEW
550
V
Dynamic saturation voltage
I
C
= 2.5 A; I
B
= 0.5 A, t = 1
ms
V
CEsatdyn
10
15
V
y
g
I
C
= 2.5 A; I
B
= 0.5 A, t = 3
ms
V
CEsatdyn
2.8
5
V
Gain bandwidth product
I
C
= 200 mA; V
CE
= 10 V;
f = 1 MHz
f
T
4
MHz
BUF636A
TELEFUNKEN Semiconductors
Rev. A2, 26-Sep-97
3 (8)
Switching Characteristics
T
case
= 25
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Resistive load (figure 2)
Turn on time
I
C
= 0.8 A; I
B1
= 0.2 A; I
B2
= 0.4 A;
t
on
0.15
0.25
ms
Storage time
C
;
B1
;
B2
;
V
S
= 250 V
t
s
3
3.5
ms
Fall time
t
f
0.3
0.45
ms
Turn on time
I
C
= 2.5 A; I
B1
= 0.5 A; I
B2
= 1.3 A;
t
on
0.4
0.6
ms
Storage time
C
;
B1
;
B2
;
V
S
= 250 V
t
s
1.3
1.5
ms
Fall time
t
f
0.1
0.15
ms
Inductive load (figure 3)
Storage time
I
C
= 0.8 A; I
B1
= 0.2 A; I
B2
= 0.4 A;
t
s
3
3.5
ms
Fall time
C
;
B1
;
B2
;
V
clamp
= 300 V; L = 200
mH
t
f
0.2
0.3
ms
Storage time
I
C
= 2.5 A; I
B1
= 0.5 A; I
B2
= 1.3 A;
t
s
1.4
1.7
ms
Fall time
C
;
B1
;
B2
;
V
clamp
= 300 V; L = 200
mH
t
f
0.1
0.15
ms
+
3 Pulses
94 8863
t
p
T +
0.1
t
p
+ 10 ms
V
S2
+ 10 V
I
B
w
I
C
5
I
C
L
C
V
S1
+
V
(BR)CEO
I
(BR)R
100 m
W
I
C
V
CE
V
(BR)CEO
I
measure
0 to 30 V
Figure 1. Test circuit for V
(BR)CE0
BUF636A
TELEFUNKEN Semiconductors
Rev. A2, 26-Sep-97
4 (8)
0
t
I
C
V
CE
R
C
V
CC
I
B
V
BB
R
B
I
B1
94 8852
+
(1)
(1) Fast electronic switch
I
B
I
B1
I
B2
I
C
0.9 I
C
0.1 I
C
t
t
s
t
off
t
f
t
r
t
d
t
on
Figure 2. Test circuit for switching characteristics resistive load
0
0.9 I
C
0.1 I
C
t
I
C
V
CE
V
CC
I
B
V
BB
R
B
I
B1
V
clamp
+
L
C
94 8853
(1)
(1) Fast electronic switch
(2) Fast recovery rectifier
(2)
I
B
I
B1
I
B2
I
C
t
t
r
t
s
Figure 3. Test circuit for switching characteristics inductive load
BUF636A
TELEFUNKEN Semiconductors
Rev. A2, 26-Sep-97
5 (8)
Typical Characteristics (T
case
= 25
_C unless otherwise specified)
95 10508
0
100
200
300
400
0
1
2
3
4
6
600
5
500
I Collector Current (
A
)
C
V
CE
Collector Emitter Voltage ( V )
V
CEsat
< 2V
0.1 x I
C
< I
B2
< 0.5 x I
C
Figure 4. V
CEW
Diagram
0
4
8
12
16
0
1
2
3
4
5
20
95 10512
I Collector Current (
A
)
C
V
CE
Collector Emitter Voltage ( V )
400 mA
290 mA
190 mA
95 mA
49 mA
I
B
= 490 mA
Figure 5. I
C
vs. V
CE
0.001
0.01
0.1
1
10
95 10510
10V
5V
25V
1
10
100
h Forward DC Current
T
ransfer
Ratio
FE
I
C
Collector Current ( A )
V
CE
= 2V
Figure 6. h
FE
vs. I
C
95 10525
0
0
25
50
75
100
0.001
0.01
0.1
1
10
100
150
125
T
case
Case Temperature (
C )
P
T
otal Power Dissipation (
W
)
tot
2.5 K/W
R
thJA
= 85 K/W
25 K/W
50 K/W
12.5 K/W
Figure 7. P
tot
vs.T
case
95 10513
0.01
0.1
1
0.01
0.1
1
10
V
Collector Emitter Saturation
V
oltage (
V
)
CEsat
I
B
Base Current ( A )
10
I
C
= 4A
3A
2A
1A
0.6A
Figure 8. V
CEsat
vs. I
B
95 10511
1
10
100
h Forward DC Current
T
ransfer
Ratio
FE
I
C
Collector Current ( A )
T
j
= 125
C
25
C
75
C
0.001
0.01
0.1
1
10
Figure 9. h
FE
vs. I
C
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