TSL254
PRECISION HIGH-SPEED LIGHT-TO-VOLTAGE CONVERTER
TAOS022A - SEPTEMBER 2003
1
The
LUMENOLOGY
r
Company
r
r
Copyright
E
2003, TAOS Inc.
www.taosinc.com
D
Monolithic Silicon IC Containing
Photodiode, Operational Amplifier, and
Feedback Components
D
Converts Light Intensity to Output Voltage
D
High Irradiance Responsivity . . . Typically
3.5 mV/(
W/cm
2
) at
p
= 880 nm
D
High Bandwidth
D
Compact 3-Leaded Clear Plastic Package
D
Low Dark (Offset) Voltage . . . 10 mV Max
At 25
C, V
DD
= 5 V
D
Single-Supply Operation
D
Wide Supply-Voltage Range . . . 2.7 V to
5.5 V
D
Low Supply Current . . . 1 mA Typical at V
DD
= 5 V
Description
The TSL254 is a light-to-voltage optical converter, combining a 1-mm-square photodiode and a transimpedance
amplifier (feedback resistor = 1 M
) on a single monolithic IC. Output voltage is directly proportional to the light
intensity (irradiance) on the photodiode. This device uses silicon-gate CMOS technology that provides
improved amplifier offset-voltage stability and low power consumption.
Functional Block Diagram
Voltage
Output
+
-
Terminal Functions
TERMINAL
DESCRIPTION
NAME
NO.
DESCRIPTION
GND
1
Ground (substrate). All voltages are referenced to GND.
OUT
3
Output voltage
V
DD
2
Supply voltage
r
r
Texas Advanced Optoelectronic Solutions Inc.
800 Jupiter Road, Suite 205
S
Plano, TX 75074
S
(972) 673-0759
3
2
1
OUT
V
DD
GND
SR PACKAGE
(FRONT VIEW)
TSL254
PRECISION HIGH-SPEED LIGHT-TO-VOLTAGE CONVERTER
TAOS022A - SEPTEMBER 2003
2
r
r
Copyright
E
2003, TAOS Inc.
The
LUMENOLOGY
r
Company
www.taosinc.com
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
DD
(see Note 1)
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
10 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) 25
C
5 s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
- 25
C to 85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
- 25
C to 85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
240
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
MIN
MAX
UNIT
Supply voltage, V
DD
2.7
5.5
V
Operating free-air temperature, T
A
0
70
C
Electrical Characteristics at V
DD
= 5 V, T
A
= 25
C,
p = 880 nm, R
L
= 10 k
(unless otherwise noted)
(see Notes 2 and 3)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
D
Dark voltage
E
e
= 0
10
mV
V
OM
Maximum output voltage swing
E
e
= 2 mW/cm
2
3
3.5
V
V
O
Output voltage
E
e
= 595
W/cm
2
1.6
2
2.4
V
Temperature coefficient of output voltage (V )
300 nm <
< 700 nm
- 0.2
%/
C
vo
Temperature coefficient of output voltage (V
O
)
p
= 880 nm
0.05
%/
C
N
e
Irradiance responsivity
3.5
mV/(
W/cm
2
)
Power supply rejection, dc
60
dB
Power supply rejection, ac
f
ac
= 1 kHz
44
dB
I
DD
Supply current
1
1.5
mA
NOTES: 2. The input irradiance E
e
is supplied by a GaAlAs infrared-emitting diode with
p
= 880 nm.
3. Irradiance responsivity is characterized over the range V
O
= 0.05 to 3 V.
Switching Characteristics at T
A
= 25
C (see Figure 1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
r
Output pulse rise time
V
DD
= 5 V,
p
= 880 nm
2
s
t
f
Output pulse fall time
V
DD
= 5 V,
p
= 880 nm
2
s
f = 100 Hz
1.7
V
n
Output noise voltage
V
DD
= 5 V
f = 1 kHz
1
V/
Hz
n
g
DD
f = 10 kHz
1.3
TSL254
PRECISION HIGH-SPEED LIGHT-TO-VOLTAGE CONVERTER
TAOS022A - SEPTEMBER 2003
3
The
LUMENOLOGY
r
Company
r
r
Copyright
E
2003, TAOS Inc.
www.taosinc.com
PARAMETER MEASUREMENT INFORMATION
VOLTAGE WAVEFORM
TEST CIRCUIT
Input
E
e
10%
90%
Output
(see Note B)
t
r
TSL254
R
L
V
DD
2
1
3
+
-
Output
Pulse
Generator
IRED
(see Note A)
t
f
90%
10%
NOTES: A. The input irradiance is supplied by a pulsed GaAlAs infrared-emitting diode with the following characteristics:
p
= 880 nm,
t
r
< 1
s, t
f
< 1
s.
B. The output waveform is monitored on an oscilloscope with the following characteristics: t
r
< 100 ns, Z
i
1 MHz, C
i
20 pF.
Figure 1. Switching Times
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