Features
- High power gain
MAG = 15 dB @ V
CE
= 6 V, I
C
= 400 mA, f = 465 MHz
- High power
P
OUT
= 35 dBm(3W) @ V
CE
= 6 V, I
CQ
= 50 mA, f = 465 MHz
Applications
- UHF and VHF wide band amplifier
SOT223
Page 1 of 6
http://www.tachyonics.co.kr
Sept. 2005.
Rev. 1.0
NPN SiGe RF POWER TRANSISTOR
Preliminary Specification
THN6701B
Absolute Maximum Ratings (T
A
= 25
)
PIN CONFIGURATION
1. Base
2. Emitter
3. Collector
4. Emitter
Unit in mm
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
150
I
C
1
A
W
Unit
BV
CBO
17
V
Parameter
Symbol
P
tot
4.5
Ratings
T
stg
-65 ~ 150
V
BV
EBO
1.5
V
BV
CEO
12
T
j
6.5
7.
0
3.0
3.
5
1
2
3
4
2.3
4.6
0.7
Electrical Characteristics (T
A
= 25
)
Page 2 of 6
http://www.tachyonics.co.kr
Sept. 2005.
Rev. 1.0
Preliminary Specification
THN6701B
300
-
40
V
CE
= 6 V, I
C
= 200 mA
h
FE
DC Current Gain
1.0
-
-
V
CB
= 15 V, I
E
= 0 mA
I
CBO
Collector Cut-off Current
5.0
-
-
V
CE
= 11 V, I
B
= 0 mA
I
CEO
1.0
-
-
V
EB
= 1.0 V, I
C
= 0 mA
I
EBO
Emitter Cut-off Current
6.2
Typ.
-
Max.
pF
-
V
CB
= 6 V, I
E
= 0 mA, f = 1 MHz
C
re
Reverse Transfer Capacitance
Unit
Min.
Test Conditions
Symbol
Parameter
h
FE
Classification
170 - 300
40 - 200
h
FE
Value
R6701
R6701
Marking
Thermal Characteristics
K/W
27
Thermal Resistance from Junction to Ambient
R
th j-a
Unit
Value
Parameter
Symbol
Typical Characteristics ( T
A
= 25
, unless otherwise specified)
Page 3 of 6
http://www.tachyonics.co.kr
Sept. 2005.
Rev. 1.0
Preliminary Specification
THN6701B
Collector Current vs.
Base to Emitter Voltage
DC Current Gain
vs. Collector Current
Reverse Transfer Capacitance
vs. Collector to Base Voltage
0
1
2
3
4
5
6
7
8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
I
B
step = 2 mA
C
o
l
l
e
c
to
r C
u
rre
n
t, I
C
(A
)
Collector to Emitter Voltage, V
CE
(V)
Collector Current
vs. Collector to Emitter Voltage
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
100
200
300
400
500
V
CE
= 6 V
Coll
ect
o
r Current
,
I
C
(m
A)
Base to Emitter Voltage, V
BE
(V)
0
2
4
6
8
10
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
Re
verse Tra
n
sf
er
C
apa
cit
a
nce,
C
re
(pF
)
Collector to Base Voltage, V
CB
(V)
10
-3
10
-2
10
-1
10
0
0
25
50
75
100
125
150
V
CE
= 6 V
DC
Cur
r
ent
G
a
in
,
h
FE
Collector Current, I
C
(A)
Page 4 of 6
http://www.tachyonics.co.kr
Sept. 2005.
Rev. 1.0
Preliminary Specification
THN6701B
Output Power or Power Gain
vs. Input Power
35
P
OUT
(dBm)
60
10
6
465
CW, class-AB
C
(%)
G
P
(dB)
V
CE
(V)
f (MHz)
Operation Mode
Collector Current or Collector Efficiency
vs. Input Power
Application Information
RF performance at T
S
60
in common emitter configuration
0
5
10
15
20
25
30
10
15
20
25
30
35
40
6
8
10
12
14
16
18
Output Pow
e
r,
P
OU
T
(d
Bm
)
Input Power, P
IN
(dBm)
P
OUT
f = 465 MHz, V
CC
= 6 V, I
CQ
= 50 mA
Pow
e
r Gai
n
,
G
P
(dB)
G
P
0
5
10
15
20
25
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
10
20
30
40
50
60
70
80
f = 465 MHz, V
CC
= 6 V, I
CQ
= 50 mA
C
I
C
C
o
l
l
e
c
tor
C
u
r
r
e
n
t, I
C
(A)
Input Power, P
IN
(dBm)
C
o
l
l
e
cto
r
E
f
fi
ci
e
n
c
y
,
C
(%
)
Page 5 of 6
http://www.tachyonics.co.kr
Sept. 2005.
Rev. 1.0
Preliminary Specification
THN6701B
Evaluation Board (for FRS at 465 MHz)
FR4 glass epoxy: dielectric constant = 4.5, thickness = 0.8 mm
Evaluation board dimension = 119
50 mm
2
Test condition: CW test, V
CC
= 6.0 V, I
CQ
= 50 mA, f = 465 MHz
Test Circuit Schematic Diagram
C1
C2 C3
L1
C4
C5
C8
C7
L2
C6
C9
100 pF (1608, Murata)
C1, C4
C7, C9
0.4 X 1.5 X 6T
(Air Coil)
L2
100 nH (1608, Murata)
L1
18 pF (1608, Murata)
C3
10 pF (1608, Murata)
C2
1 nF (1608, Murata)
C5,C8
15pF (1608, Murata)
C6
Value
Part
V
BB
INPUT
OUTPUT
100 pF
100 pF
1 nF
18 pF
100 pF
15 pF
L2
0.5 X 1.5 X 6T
10 pF
1 nH
V
CC
W=1.3 mm
L=36 mm
W=1.3 mm
L=2.8 mm
W=1.3 mm
L=1.8 mm
1 nF
W=1.3 mm
L=11 mm
W=1.3 mm
L=39 mm
100 pF
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