THN6501S
DESCRIPTION
The THN6501S is a low Noise figure and good associated
gain performance at UHF, VHF and Microwave frequencies
It is suitable for a high density surface mount since
transistor has been SOT23 package
FEATURES
o Low Noise Figure
N.F = 1.0dB TYP. @ f=1GHz, V
CE
=3V, Ic=7mA
o High Gain
MAG = 14dB TYP. @ f=1GHz, V
CE
=3V, Ic=7mA
o High Transition Frequency
f
T
= 5GHz TYP. @ f=1GHz, V
CE
=3V, Ic=7mA
PIN CONFIGURATION
MARKING : AB1
MAXIMUM RATINGS
V
CBO
Collector-Base Voltage
Open Emitter
V
CEO
Collector-Emitter Voltage
Open Base
V
EBO
Emitter-Base Voltage
Open Collector
Ic
Collector Current (DC)
P
T
Total Power Dissipation
Ts = 60
T
STG
Storage Temperature
T
J
Operating Junction Temperature
PIN NO
SYMBOL
DESCRIPTION
Unit
1
2
3
B
E
C
150
-65 ~ 150
SYMBOL
PARAMETER
CONDITION
VALUE
Base
Emitter
Collector
mW
150
V
V
25
12
2.5
100
V
mA
NPN Planer RF TRANSISTOR
SOT-23
Unit : mm
www.tachyonics.co.kr
- 1/13 -
Aug-25-2003
THN6501S
Electrical Characteristics ( T
A
= 25
)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Cut-off current
Emitter-Cut-off current
D.C Current Gain
Transition Frequency
Collector-Base Capacitance
Performance Characteristics
300
dB
dB
dB
pF
Unit
min
typ
max
min
typ
max
100
100
VALUE
PARAMETER
CONDITION
SYMBOL
PARAMETER
SYMBOL
V
CBO
V
CEO
I
CBO
I
EBO
hfe
dBm
9.5
dB
14.5
1.0
0.056
12
12.5
27
G
A
OIP
3
V
CE
=3V, Ic=15mA,f=1GHz
V
CE
=6V, Ic=15mA,f=1GHz
V
CE
=3V, Ic=7mA,f=1GHz
VALUE
Unit
20
12
25
13
V
V
GHz
n A
n A
rn
[S21]
2
V
CE
=3V, Ic=7mA,f=1GHz
V
CE
=3V, Ic=7mA,f=1GHz
NFmin
11
14
V
CE
= 3V, Ic = 7mA
V
CE
= 3V, Ic = 7mA
V
CB
= 10V, f = 1MHz
0.90
130
5
I
CE
= 100uA, I
E
= 0
I
CE
= 100uA, I
B
= 0
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
f
T
C
CB
Noise Resistance
Associated Gain
Minimum Noise Figure
CONDITION
Insertion Power Gain
V
CE
=3V, Ic=7mA,f=1GHz
V
CE
=3V, Ic=15mA,f=1GHz
MSG
MAG
Maximum Stable Gain
Maximum Available Gain
V
CE
=3V, Ic=7mA,f=1GHz
Output 3rd Intercept
V
CE
=3V, Ic=15mA,f=1GHz
www.tachyonics.co.kr
- 2/13 -
Aug-25-2003
THN6501S
Total power dissipation Pt = f(T
A
)
Icc vs. V
CE
( T
A
= 25
)
Icc vs. V
BE
hfe vs. Icc
0
10
20
30
40
50
60
70
0
2
4
6
8
10
V
CE
[V]
I
CE
[mA]
Ibe=100uA
Ibe=300uA
Ibe=400uA
Ibe=500uA
0
100
200
0
50
100
150
T
A
[]-Ambient Temperature
Pt[mW]-Total power dissipation
0
20
40
60
80
100
120
140
160
0
25
50
75
100
I
CE
[mA]
hfe
0
20
40
60
80
100
120
0
0.2
0.4
0.6
0.8
1
V
BE
[V]
I
CE
[mA]
V
CE
= 6[V]
Ibe=200uA
www.tachyonics.co.kr
- 3/13 -
Aug-25-2003
THN6501S
Transition Frequency : f
T
vs. Icc
Power Gain : MSG, MAG vs. Icc
Power Gain : MSG, MAG vs. Frequency
Power Gain : S
21
vs. Frequency
10
11
12
13
14
15
16
0
10
20
30
40
50
60
70
I
CC
[mA]
Gms, Gma [dB]
0
2
4
6
8
10
12
0
10
20
30
40
50
60
70
I
CC
[mA]
f
T
[GHz]
0.5
1.0
1.5
2.0
2.5
0.0
3.0
4
6
8
10
12
14
16
18
2
20
freq, GHz
0.5
1.0
1.5
2.0
2.5
0.0
3.0
8
10
12
14
16
18
20
6
22
freq, GHz
V
CE
=3V
V
CE
=2V
f = 1GHz
V
CE
=6V
Icc=15mA
V
CE
=3V
Icc=15mA
MAX Gain [dB]
S21[dB]
V
CE
=6V
Icc=15mA
V
CE
=3V
Icc=15mA
V
CE
=2V
V
CE
=3V
V
CE
=8V
f = 1GHz
V
CE
=8V
www.tachyonics.co.kr
- 4/13 -
Aug-25-2003
THN6501S
Intermodulation Intercept Point IP3=f(Ic)
C
CB
vs. V
CB
(Z
S
=Z
L
= 50
)
Fmin vs. Icc
Noise Figure Contours & Constant Gain
V
CE
= 3V, Icc = parameter, Zs = Zsopt
f = 1 GHz, V
CE
= 3V, Icc = 7mA
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
5
10
15
20
V
CB
[V]
Ca
pa
cit
a
n
ce C
BC
[pF]
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
5
10 15 20 25 30 35 40 45 50 55
ICE [mA]
NF [dB]
OPT
=0.365166
Fmin =1.0dB
=1.1dB
=1.2dB
=1.3dB
4 contour
Input Stable
Output Stable
Ga=14dB
=13dB
=12dB
=11dB
=10dB
5 contour
f = 1MHz
f = 1GHz
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Ic [mA]
IP
3
[d
bm]
V
CE
=6V
V
CE
=3V
V
CE
=2V
www.tachyonics.co.kr
- 5/13 -
Aug-25-2003
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