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Электронный компонент: THM2003J

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Descriptions
THM2003J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest
Silicon Germanium Hetero Junction Bipolar Transistor (TAHB09) process of Tachyonics Co.,
which has 30GHz f
T
(Normal). THM2003J uses a multi feedback cascade amplifier topology
with resistive feedback for broad band performance as well as stability over its entire
temperature range. THM2003J also has internally matched 50 ohm impedance and wide
bandwidth.
Features
- Wide band operation :
f
3dB
= 2.2GHz
- Single Voltage Supply
- Internally Matched to 50 Ohm Input & Output
- High Power Gain : 21dB at 1000MHz
- Saturated Output Power : P
o(sat)
= +2dBm at 1000MHz
Applications
- DBS, LNB , Medium Output
- Transmission Stage Buffer (Mobile Communication)
- IF/RF Buffer Amplifier
SOT363
Function Block Diagram
Page 1 of 8
60-8, Gasan-dong, Kumchun-Gu,
Seoul, Korea. 153-023
Tel : 82-2-818-9832
Fax : 82-2-818-9635
http://www.tachyonics.co.kr
May. 2004.
Rev. 1.0
Vcc
IN
50
50
OUT
GND
C
C
C
Amp
1
4
2,3,5
6
SiGe HBT MMIC
Wideband Linear Amplifier
PRELIMINARY
Wideband Linear Amplifier
THM2003J
Pin Configuration
Pin Description
RF SIGNAL OUTPUT
OUT
4
POWER SUPPLY
VCC
6
GROUND
GND
5
GROUND
GND
3
GROUND
GND
2
RF SIGNAL INPUT
IN
1
Description
Name
Pin No.
1
T 0 3
Top View
2
3
6
5
4
1
Bottom View
2
3
6
5
4
PRELIMINARY
Wideband Linear Amplifier
THM2003J
Page 2 of 8
60-8, Gasan-dong, Kumchun-Gu,
Seoul, Korea. 153-023
Tel : 82-2-818-9832
Fax : 82-2-818-9635
http://www.tachyonics.co.kr
May. 2004.
Rev. 1.0
Pin Explanation
PRELIMINARY
Wideband Linear Amplifier
THM2003J
Page 3 of 8
60-8, Gasan-dong, Kumchun-Gu,
Seoul, Korea. 153-023
Tel : 82-2-818-9832
Fax : 82-2-818-9635
http://www.tachyonics.co.kr
May. 2004.
Rev. 1.0
Signal output pin. A internal
matching circuit, configured
with resistors, enables 50
impedance connection over a
wide band. This pin must be
coupled to next stage input
with capacitor for DC blocking.
4.15
OUT
4
Ground pins. This pins should
be connected to system ground
with minimum inductance.
All the ground pins must be
connected common with wide
ground pattern to minimized
impedance difference
-
0
GND
2
3
5
DC power supply pin. This pin
should be externally connected
to bypass capacitor to minimize
ground impedance.
-
4.5~5.5
VCC
6
Signal input pin. A internal
matching circuit, configured
with resistors, enables 50
impedance connection over a
wide band. This pin must be
coupled to signal source with
capacitor for DC blocking.
0.90
-
IN
1
Internal equivalent circuit
Function
Pin
Voltage
[V]
Note
Applied
Voltage
[V]
Pin
Name
Pin
No
Note : Pin voltage is measured at Vcc = 5.0 V
Electrical Characteristics
(T
A
= 25
, V
CC
= 5V , Z
S
= Z
L
= 50
)
Absolute Maximum Ratings
-55 to +150
Storage Temperature Range
+150
Maximum Junction Temperature
-40 to +85
Operation Temperature Range
dBm
+10
RF Input Power
mA
30
Supply Current
Supply Voltage
Parameter
V
6
Unit
Rating
I
CC
ISL
NF
RL
OUT
RL
IN
P
O(sat)
Gp
f
3dB
Symbol
mA
15
10
9
No Input Signal
Bias Current
dB
-
33
28
f = 1000MHz
Isolation
dB
6.0
4.0
-
f = 1000MHz
Noise Figure
dB
-
15
10
f = 1000MHz
Output Return Loss
dB
-
15
9
f = 1000MHz
Input Return Loss
f = 1000MHz
f = 1000MHz
Condition
dBm
dB
MHz
Unit
-
+2
0
Saturated output
power
23.5
21
18
Power Gain
-
2200
2000
Upper 3dB cut off
frequency
Max.
Typ.
Min.
Specification
Parameter
Page 4 of 8
60-8, Gasan-dong, Kumchun-Gu,
Seoul, Korea. 153-023
Tel : 82-2-818-9832
Fax : 82-2-818-9635
http://www.tachyonics.co.kr
May. 2004.
Rev. 1.0
PRELIMINARY
Wideband Linear Amplifier
THM2003J
Typical Characteristics
Fig1. Input/Output Impedance
Fig3. Small Signal Gain
Fig2. Input/Output Return Loss
Fig4. Isolation
S(
2,2)
Output Reflection Coefficient
0.5
1.0
1.5
2.0
2.5
3.0
0.0
3.5
-18
-16
-14
-12
-20
-10
freq, GHz
S(
1
,
1)
Input Reflection Coefficient
0.5
1.0
1.5
2.0
2.5
3.0
0.0
3.5
-25
-20
-15
-30
-10
freq, GHz
Page 5 of 8
60-8, Gasan-dong, Kumchun-Gu,
Seoul, Korea. 153-023
Tel : 82-2-818-9832
Fax : 82-2-818-9635
http://www.tachyonics.co.kr
May. 2004.
Rev. 1.0
PRELIMINARY
Wideband Linear Amplifier
THM2003J
0.5
1.0
1.5
2.0
2.5
0.0
3.0
15
20
25
10
30
freq, GHz
dB(S(2,
1
))
0.5
1.0
1.5
2.0
2.5
0.0
3.0
-35
-30
-25
-20
-15
-40
-10
freq, GHz
dB
(S
(
1,2
))
d
B
(S(
1
,
1
))
d
B
(S(
2
,
2
))