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TYNx40 Series
STANDARD
40A SCRs
April 2002 - Ed: 4A
MAIN FEATURES:
DESCRIPTION
The TYNx40 series is suitable for applications
where in-rush current conditions are critical, such
as overvoltage crowbar protection circuits in
power supplies, in-rush current limiting circuits,
solid state relays (in back to back configuration),
welding equipment, high power motor control
circuits.
Using clip assembly technology, they provide a
superior performance in high surge current capa-
bilites.
Symbol
Value
Unit
I
T(RMS)
40
A
V
DRM
/V
RRM
600 to 1000
V
I
GT
35
mA
A
K
G
G
A
A
K
TO-220AB
(TYNx40)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (180 conduction angle)
Tc = 95C
40
A
IT
(AV)
Average on-state current (180 conduction angle)
Tc = 95C
25
A
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25C
480
A
tp = 10 ms
460
I
t
I
t Value for fusing
Tj = 25C
1060
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 60 Hz
Tj = 125C
50
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
4
A
P
G(AV)
Average gate power dissipation
Tj = 125C
1
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
V
RGM
Maximum peak reverse gate voltage
5
V
TYNx40 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
THERMAL RESISTANCES
PRODUCT SELECTOR
ORDERING INFORMATION
OTHER INFORMATION
Note: x = voltage
Symbol
Test Conditions
Value
Unit
I
GT
V
D
= 12 V R
L
= 33
MIN.
3.5
mA
MAX.
35
V
GT
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125C
MIN.
0.2
V
I
H
I
T
= 500 mA Gate open
MAX.
75
mA
I
L
I
G
= 1.2 I
GT
MAX.
150
mA
dV/dt
V
D
= 67 % V
DRM
Gate open
Tj = 125C
MIN.
1000
V/s
V
TM
I
TM
= 80 A tp = 380 s
Tj = 25C
MAX.
1.6
V
V
t0
Threshold voltage
Tj = 125C
MAX.
0.85
V
R
d
Dynamic resistance
Tj = 125C
MAX.
10
m
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25C
MAX.
5
A
Tj = 125C
4
mA
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (DC)
0.8
C/W
R
th(j-a)
Junction to ambient (DC)
60
C/W
Part Number
Voltage
Sensitivity
Package
600 V
800 V
1000 V
TYNx40
X
X
X
35 mA
TO-220AB
Part Number
Marking
Weight
Base Quantity
Packing mode
TYNx40
TYNx40
2.3 g
250
Bulk
TYNx40RG
TYNx40
2.3 g
50
Tube
TYN 6 40 (RG)
CURRENT: 40A
VOLTAGE:
6: 600V
8: 800V
10: 1000V
STANDARD
SCR
SERIES
PACKING MODE
Blank: Bulk
RG: Tube
TYNx40 Series
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Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2: Average and DC on-state current versus
case temperature.
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of It.
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
P(W)
= 180
IT(av)(A)
360
0
25
50
75
100
125
0
10
20
30
40
50
IT(av)(A)
D.C.
= 180
Tcase(C)
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
K = [Zth/Rth]
Zth(j-c)
Zth(j-a)
tp(s)
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 C]
IGT
IH & IL
Tj(C)
1
10
100
1000
0
50
100
150
200
250
300
350
400
450
500
ITSM(A)
Non repetitive
Tj initial = 25 C
Repetitive
Tcase = 95 C
Number of cycles
One cycle
tp = 10ms
0.01
0.10
1.00
10.00
100
1000
5000
ITSM(A),I
2
t(A
2
s)
Tj initial = 25 C
ITSM
I
2
t
dI/dt
limitattion
tp(ms)
TYNx40 Series
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PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
Fig. 7: On-state characteristics (maximum
values).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
500
ITM(A)
Tj = 25C
Tj = Tj max.
Tj max.:
Vto = 0.85V
Rd = 10m
VTM(V)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
15.20
15.90
0.598
0.625
a1
3.75
0.147
a2
13.00
14.00
0.511
0.551
B
10.00
10.40
0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
2.40
2.70
0.094
0.106
F
6.20
6.60
0.244
0.259
I
3.75
3.85
0.147
0.151
I4
15.80
16.40
16.80
0.622
0.646
0.661
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
M
2.60
0.102
M
B
l4
C
b2
a2
l2
c2
l3
b1
a1
A
F
L
I
e
c1
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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