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PRELIMINARY DATA
November, 20 2002
DB-960-70W
70W / 26V / 925-960 MHz PA using 2x PD57045S
The
LdmosST FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 70 W min. with 13 dB gain over 925-960
MHz
10:1 LOAD VSWR CAPABILITY
BeO FREE AMPLIFIER.
DESCRIPTION
The DB-960-70W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for GSM & E-GSM base station
applications.
The DB-960-70W is designed in cooperation with
Europenne de Tlcommunications S.A
(www.etsa.fr), for high gain and broadband
performance operating in common source mode
at 26 V, capable of withstanding load mismatch up
to 10:1 all phases and with harmonics lower than
30 dBc.
ORDER CODE
DB-960-70W
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
o
C)
Symbol
Parameter
Value
Unit
V
DD
Supply voltage
32
V
I
D
Drain Current
9
A
P
DISS
Power Dissipation
135
W
T
CASE
Operating Case Temperature
-20 to +85
o
C
P
amb
Max. Ambient Temperature
+55
o
C
MECHANICAL SPECIFICATION
L=80 mm W=50 mm H=10 mm
DB-960-70W
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Symbol
Test Conditions
Min.
Typ.
Max.
Unit
FREQ.
Frequency Range
925
960
MHz
Gain
P
OUT
= 75 W
12.5
13
dB
P
1dB
Over frequency range: 925 - 960 MHz
70
75
W
Flatness
Over frequency range and @ P
OUT
= 75 W
+/- 0.5
dB
Flatness
P
OUT
from 0.1W to 75W
1
dB
ND at P
1dB
P
1dB
45
50
%
IRTL
Input return Loss P
OUT
from 0.1W to 75W
-20
-15
dB
Harmonic
P
OUT
= 75 W
-40
-30
dBc
VSWR
Load Mismatch all phases @ P
OUT
= 75 W
10:1
Spurious
10:1 VSWR all phases and P
OUT
from 0.1 to 75W
-76
dBc
IMD
3
P
OUT
= 75 WPEP
-25
dBc
ELECTRICAL SPECIFICATION (T
amb
= +25
o
C, Vdd = 26V, Idq = 2 x 200mA)
TYPICAL PERFORMANCE
Output Power versus Input Power
Power Gain versus Frequency (Pout = 75W)
P1dB and Efficiency versus Frequency
0
2
4
6
8
Pin (W)
0
20
40
60
80
100
120
Pout (W)
Vdd = 26 V
Idq = 2 x 200 mA
940 MHz
960 MHz
920 MHz
910
920
930
940
950
960
970
F (MHz)
10
11
12
13
14
15
Gp (dB)
Vdd = 26 V
Idq = 2 x 200 mA
910
920
930
940
950
960
970
F (MHz)
20
40
60
80
100
120
P1dB (W)
30
40
50
60
70
80
Nd (%)
Vdd = 26 V
Idq = 2 x 200 mA
P1dB
Eff.
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DB-960-70W
CV1
CV2
Ref. ETSA c07/2000 - Ed1
TEST FIXTURE COMPONENT LAYOUT
TEST CIRCUIT PHOTOMASTER
Ref. ETSA c07/2000 - Ed1
DB-960-70W
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TEST CIRCUIT COMPONENT PART LIST
COMPONENT
DESCRIPTION
T1, T2
PD57045S TRANSISTOR
C1, C2, C23, C24
47pF - 500V CERAMIC CHIP CAPACITOR
C3, C4
2.2pF - 500V CERAMIC CHIP CAPACITOR
C5, C6, C17, C18
100pF - 500V CERAMIC CHIP CAPACITOR
C7, C8, C9, C10, C11, C12, C13, C14
10pF - 500V CERAMIC CHIP CAPACITOR
C15, C16
100nF - 63V CERAMIC CHIP CAPACITOR
C19, C20
1F / 35V ELECTROLYTIC CAPACITOR
C21, C22
4.7pF - 500V CERAMIC CHIP CAPACITOR
C26, C27
3.3pF - 500V CERAMIC CHIP CAPACITOR
C25
0.5pF - 500V CERAMIC CHIP CAPACITOR
CV1, CV2
ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V
P1, P2
10K Ohms MULTITURN POTENTIOMETER
R1,R7
100 Ohms 1/4W 1206 SMD CHIP RESISTOR
R2
50 Ohms 30W - 4GHz LOAD
R3, R4
4.7K Ohms 1/4W 1206 SMD CHIP RESISTOR
R5, R6
10K Ohms 1/4W 1206 SMD CHIP RESISTOR
D1, D2
ZENER DIODE 5V - 500 mW SOD80
SM1, SM2
90 SMD HYBRID COUPLER ANAREN Xinger 1304-3
BOARD
METCLAD MX3-30-C1/10C THK 0.762 mm Cu 35
SUBSTRATE
TEFLON-GLASS Er = 2.55
BACK SIDE
COPPER FLANGE 2 mm THICKNESS
CERAMIC CHIP CAPACITORS
ATC100B or EQUIVALENT
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DB-960-70W
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