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BUW1015
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
HIGH VOLTAGE CAPABILITY (> 1500 V)
s
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
HORIZONTAL DEFLECTION FOR HIGH-END
COLOUR TV AND 19" MONITORS
DESCRIPTION
The BUW1015 is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
INTERNAL SCHEMATIC DIAGRAM
February 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
1500
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
700
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
10
V
I
C
Collector Current
14
A
I
CM
Collector Peak Current (t
p
< 5 ms)
18
A
I
B
Base Current
8
A
I
BM
Base Peak Current (t
p
< 5 ms)
11
A
P
to t
Total Dissipation at T
c
= 25
o
C
160
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
TO-247
1/7
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.78
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1500 V
V
CE
= 1500 V T
j
= 125
o
C
0.2
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
100
A
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
700
V
V
EBO
Emitter-Base Voltage
(I
C
= 0)
I
E
= 10 mA
10
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 A I
B
= 2 A
1.5
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 10 A I
B
= 2 A
1.5
V
h
FE
DC Current Gain
I
C
= 10 A V
CE
= 5 V
I
C
= 10 A V
CE
= 5 V T
j
= 100
o
C
7
5
10
14
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
V
CC
= 400 V I
C
= 10 A
I
B1
= 2 A I
B2
= -6 A
1.5
110
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 10 A f = 31250 Hz
I
B1
= 2 A I
B2
= -6 A
V
ceflyb ack
= 1200 sin
5
10
6
t V
4
220
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 6 A f = 64 KHz
I
B1
= 1 A
V
beoff
= - 2 V
V
ceflyb ack
= 1100 sin
5
10
6
t V
3.7
200
s
ns
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BUW1015
2/7
Safe Operating Area
Derating Curve
Collector Emitter Saturation Voltage
Thermal Impedance
DC Current Gain
Base Emitter Saturation Voltage
BUW1015
3/7
Power Losses at 64 KHz
Switching Time Inductive Load at 64KHz
(see figure 2)
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
B1
has to be provided for the lowest gain h
FE
at T
j
= 100
o
C (line scan phase). On the other hand,
negative base current I
B2
must be provided the
transistor to turn off (retrace phase). Most of the
dissipation, especially in the deflection
application, occurs at switch-off so it is essential
to determine the value of I
B2
which minimizes
power losses, fall time t
f
and, consequently, T
j
. A
new set of curves have been defined to give total
power losses, t
s
and t
f
as a function of I
B1
at 64
KHz scanning frequencies for choosing the
optimum drive. The test circuit is illustrated in
figure 1.
The values of L and C are calculated from the
following equations:
1
2
L
(
I
C
)
2
=
1
2
C
(
V
CEfly
)
2
=
2
f
=
1
L
C
Where I
C
= operating collector current, V
CEfly
=
flyback voltage, f= frequency of oscillation during
retrace.
BASE DRIVE INFORMATION
Reverse Biased SOA
BUW1015
4/7
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Switching Waveforms in a Deflection Circuit
BUW1015
5/7