BUL38D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
LOW BASE-DRIVE REQUIREMENTS
s
VERY HIGH SWITCHING SPEED
s
FULLY CHARACTERISED AT 125
o
C
s
HIGH RUGGEDNESS
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL38D is manufactured using high voltage
Multi
Epitaxial
Planar
technology
for
high
switching speeds and high voltage withstand
capability.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
June 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CES
Collect or-Emitter Voltage (V
BE
= 0)
800
V
V
CEO
Collect or-Emitter Voltage (I
B
= 0)
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
9
V
I
C
Collect or Current
5
V
I
CM
Collect or Peak Current (t
p
<5 ms)
10
A
I
B
Base Current
2
A
I
BM
Base Peak Current (t
p
<5 ms)
4
A
P
t ot
Tot al Dissipation at Tc = 25
o
C
80
W
T
stg
Storage T emperat ure
-65 to 150
o
C
T
j
Max. O perating Junction Temperature
150
o
C
1
2
3
TO-220
1/6
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junct ion-Case
Max
Thermal Resistance Junct ion-Ambient
Max
1.56
62. 5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collector Cut -of f
Current (V
BE
= 0)
V
CE
= 800 V
V
CE
= 800 V
T
j
= 125
o
C
100
500
A
A
I
CEO
Collector Cut -of f
Current (I
B
= 0)
V
CE
= 450 V
250
A
V
CEO(sus )
Collector-Emit ter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
L = 25 mH
450
V
V
EBO
Emitt er-Base Voltage
(I
C
= 0)
I
E
= 10 mA
9
V
V
CE(sat )
Collector-Emit ter
Saturation Voltage
I
C
= 1 A
I
B
= 0.2 A
I
C
= 2 A
I
B
= 0.4 A
I
C
= 3 A
I
B
= 0.75 A
0.5
0.7
1.1
V
V
V
V
BE(s at)
Base-Emitt er
Saturation Voltage
I
C
= 1 A
I
B
= 0.2 A
I
C
= 2 A
I
B
= 0.4 A
1.1
1.2
V
V
h
F E
DC Current Gain
I
C
= 10 mA
V
CE
= 5 V
I
C
= 0. 5 A
V
CE
= 5 V
I
C
= 2 A
V
CE
= 5 V
Group A
Group B
10
13
22
60
23
32
t
s
t
f
RESI STIVE LO AD
St orage Time
Fall Time
I
C
= 2. 5 A
V
CC
= 150 V
I
B1
= -I
B2
= 0.5 A
t
p
= 30
s
1. 0
2.2
0.8
s
s
t
s
t
f
INDUCTIVE LO AD
St orage Time
Fall Time
I
C
= 2 A
I
B1
= 0.4 A
V
BE(of f)
= -5 V
R
BB
= 0
V
CL
= 250 V
L = 200
H
1
55
1.8
100
s
ns
t
s
t
f
INDUCTIVE LO AD
St orage Time
Fall Time
I
C
= 2 A
I
B1
= 0. 4 A
V
BE(of f)
= -5 V
R
BB
= 0
V
CL
= 250 V
L = 200
H
T
j
= 125
o
C
1.3
100
s
ns
V
f
Diode F orward Voltage
I
C
= 2 A
1.5
V
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %.
The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
BUL38D
2/6
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
Inductive Storage Time
RBSOA and Inductive Load Switching Test
Circuit
Inductive Fall Time
Reverse Biased SOA
BUL38D
4/6
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