BUL1603ED
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
s
INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
s
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
ARCING TEST SELF PROTECTED
APPLICATIONS
s
TWO LAMPS ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING 277 V
AC
IN
PUSH-PULL CONFIGURATION
DESCRIPTION
The BUL1603ED is a new device designed for
fluorescent electronic ballast 277 V
AC
push-pull
applications.
This device can be used without baker clamp and
transil protection, reducing greatly the component
count.
INTERNAL SCHEMATIC DIAGRAM
September 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage
(V
BE
= 0; I
CES
= 10 mA; )
1600
V
V
CES
Collector-Emitter Voltage
(V
BE
= 0; I
CES
= 100
A; )
1550
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
650
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
11
V
I
C
Collector Current
3
A
I
CM
Collector Peak Current (t
p
<5 ms)
6
A
I
B
Base Current
2
A
I
BM
Base Peak Current (t
p
<5 ms)
4
A
P
tot
Total Dissipation at T
c
= 25
o
C
80
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
TO-220
1/6
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1550 V
100
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 9 V
100
A
V
(BR)CES
Collector-Emitter
Breakdown Voltage
(V
BE
= 0)
I
C
= 10 mA
I
C
= 100
A
1600
1550
V
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA L = 25 mH
650
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10 mA
11
18
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.25 A
I
C
= 0.25 A I
B
= 0.025 A
1.5
1.5
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.25 A
1.2
V
h
FE
DC Current Gain
I
C
= 5 mA V
CE
= 10 V
I
C
= 0.4 A V
CE
= 3 V
I
C
= 1 A V
CE
= 1.5 V
18
15
4
40
t
d
t
r
t
s
t
f
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
Fall Time
I
C
= 0.5 A V
CC
= 125 V
I
B1
= 0.05 A I
B2
= -0.25 A
D.C. = 2% P.W. = 300
s
(see figure 1)
0.3
0.8
1.2
0.35
s
s
s
s
E
ar
Repetitive Avalanche
Energy
L = 2 mH C = 1.8 nF
V
CC
= 50 V V
BE
= -5 V
(see figure 2)
6
mJ
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BUL1603ED
2/6
Figure 1: Resistive Load Switching Test Circuit
Figure 2: Energy Rating Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
Base Emitter Saturation Voltage
BUL1603ED
4/6
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