BUL1101E
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
LARGE RBSOA
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
April 2003
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
1100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
V
(BR)EBO
V
I
C
Collector Current
3
A
I
CM
Collector Peak Current (t
p
<5 ms)
6
A
I
B
Base Current
1.5
A
I
BM
Base Peak Current (t
p
<5 ms)
3
A
P
tot
Total Dissipation at Tc = 25
o
C
70
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
TO-220
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THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-ambient Max
1.78
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1100 V
100
A
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 1 mA
12
24
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
450
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 200 mA
0.25
1
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 200 mA
1.5
V
h
FE
DC Current Gain
I
C
= 250 mA V
CE
= 5 V
I
C
= 2 A V
CE
= 5 V
20
6
38
10
60
15
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 2.5 A V
CC
= 125 V
V
BB(o ff)
= -5 V t
P
= 300
s
I
B1
= - I
B2
= 0.5 A
(see figure 1)
400
2
700
s
ns
E
ar
Repetitive Avalanche
Energy
L = 2 mH C = 1.8 nF
I
BR
2.5A (see figure 2)
6
mJ
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
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Safe Operating Area
Output Characteristics
Base-Emitter Saturation Voltage
Derating Curve
Collector-Emitter Saturation Voltage
DC Current Gain
BUL1101E
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DC Current Gain
Reverse Biased Safe Operating Area
Resistive Load Switching Times
BUL1101E
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Figure 2: Energy Rating Test Circuit
Figure 1: Resistive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
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DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
0.409
L2
16.40
0.645
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
M
2.60
0.102
DIA.
3.75
3.85
0.147
0.151
P011CI
TO-220 MECHANICAL DATA
BUL1101E
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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