BD179
NPN SILICON TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
NPN TRANSISTOR
APPLICATION
s
GENERAL PURPOSE SWITCHING
DESCRIPTION
The BD179 is a silicon epitaxial planar NPN
transistor in Jedec SOT-32 plastic package,
designed for medium power linear and switching
applications.
INTERNAL SCHEMATIC DIAGRAM
December 2000
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
80
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
3
A
I
B
Base Current
7
A
P
tot
Total Dissipation at T
c
25
o
C
30
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1/5
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
4.16
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 80 V
100
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 100 mA
80
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.1 A
0.8
V
V
BE
Base-Emitter Voltage
I
C
= 1 A V
CE
= 2 V
1.3
V
h
FE
DC Current Gain
I
C
= 150 mA V
CE
= 2 V
I
C
= 1 A V
CE
= 2 V
40
15
h
FE
h
FE
Groups
I
C
= 150 mA V
CE
= 2 V group 16
100
250
f
T
Transition Frequency
I
C
= 250 mA V
CE
= 10 V
3
MHz
* Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Derating Curves
BD179
2/5
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
BD179
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
c1
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
BD179
4/5
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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BD179
5/5
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