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Электронный компонент: AM82223-010

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August 31, 1994
TELEMETRY APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
:1 VSWR CAPABILITY AT RATED
CONDITIONS
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
9 W MIN. WITH 6.5 dB GAIN
DESCRIPTION
The AM82223-010 is a common base, silicon
NPN bipolar transistor designed for high gain
and efficiency in the 2.2
-
2.3 GHz frequency
range.
Suitable for hi-rel aerospace telemetry applica-
tions, the AM82223-010 is provided in the indus-
try-standard AMPACTM metal/ceramic hermetic
package and incorporates internal input and out-
put impedance matching structures along with a
rugged, emitter-site ballasted overlay die geome-
try.
AM82223-010 is capable of withstanding
:1
load mismatch at any phase angle under full
rated operating conditions.
PIN CONNECTION
BRANDING
82223-10
ORDER CODE
AM82223-010
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
75C)
28
W
I
C
Device Current*
1.2
A
V
CC
Collector-Supply Voltage*
26
V
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance
4.4
C/W
*Applies only to rated RF amplifier operation
NOTE:
Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
AM82223-010
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/3
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
2.2
-
2.3 GHz
P
IN
=
2.0 W
V
CC
=
24 V
9.0
--
--
W
c
f
=
2.2
-
2.3 GHz
P
IN
=
2.0 W
V
CC
=
24 V
40
--
--
%
P
G
f
=
2.2
-
2.3 GHz
P
IN
=
2.0 W
V
CC
=
24 V
6.5
--
--
dB
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
5 mA
I
E
=
0 mA
45
--
--
V
BV
CER
I
C
=
10 mA
R
BE
=
10
45
--
--
V
BV
EBO
I
E
=
1 mA
I
C
=
0 mA
3.5
--
--
V
I
CBO
V
CB
=
24 V
--
--
1
mA
h
FE
V
CE
=
5 V
I
C
=
750 mA
20
--
300
--
DYNAMIC
AM82223-010
2/3
Ref.: Dwg. No. 12-0213 rev. A
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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AM82223-010
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