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Электронный компонент: AM80610-030

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RF & MICROWAVE TRANSISTORS
UHF COMMUNICATIONS APPLICATIONS
.400 x .400 2NLF L (S042)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
INPUT/OUTPUT MATCHING
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
30 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
The AM80610-030 is a high po wer, common
base NPN silicon bipolar device optimized for
CW operation in the 620 - 960 MHz frequency
range.
AM80610-030 utilizes a rugged, overlay, emitter-
ballasted L-Band die geometry to achieve high
gain and collector efficiency and is suitable for
driver or output stage use in Class C power am-
plifiers. Typical applications include military com-
munications, ECM, and test equipment.
The AM80610-030 is provided in the industry-
standard, metal/ceramic AMPAC
TM
hermetic
package.
PIN CONNECTION
BRANDING
80610-30
ORDER CODE
AM80610-030
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
(T
C
50
C)
57
W
I
C
Device Current*
3.0
A
V
CC
Collector-Supply Voltage*
32
V
T
J
Junction Temperature
200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance*
2.6
C/W
*Applies only to rated RF amplifier operation
AM80610-030
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbo l
Test Con dition s
Value
Uni t
Min .
Typ .
Max.
P
OUT
f
=
620
-
960 MHz
P
IN
=
4.2 W
V
CC
=
28 V
30
--
--
W
c
f
=
620
-
960 MHz
P
IN
=
4.2 W
V
CC
=
28 V
50
--
--
%
G
P
f
=
620
-
960 MHz
P
IN
=
4.2 W
V
CC
=
28 V
8.5
--
--
dB
STATIC
Symbo l
T est Con ditio ns
Value
Un it
Mi n.
Typ .
Max.
BV
CBO
I
C
=
20 mA
I
E
=
0 mA
55
--
--
V
BV
EBO
I
E
=
2 mA
I
C
=
0 mA
3.5
--
--
V
BV
CER
I
C
=
40 mA
R
BE
=
10
55
--
--
V
I
CES
V
BE
=
0 V
V
CE
=
28 V
--
--
10
mA
h
FE
V
CE
=
5 V
I
C
=
2 A
15
--
150
--
DYNAMIC
TEST CIRCUIT
Dwg.No. C127464
AM80610-030
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0213 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-TH OMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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AM80610-030