1/10
July 2001
s
HIGH SPEED:
f
MAX
= 180MHz (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 1
A(MAX.) at T
A
=25C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
s
POWER DOWN PROTECTION ON INPUTS
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8mA (MIN) at V
CC
= 4.5V
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
s
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1G79 is an advanced high-speed CMOS
SINGLE POSITIVE EDGE TRIGGERED D-TYPE
FLIP-FLOP fabricated with sub-micron silicon
gate and double-layer metal wiring C
2
MOS
technology. it is designed to operate from 2V to
5.5V, making this device ideal for portable
applications.
This D-Type flip-flop is controlled by a clock input
(CK). On the positive transition of the clock, the Q
output will be set to the logic state that was setup
at the D input.
Following the hold time interval, data at the D input
can be changed without affecting the level at the
output. Power down protection is provided on
inputs and 0 to 7V can be accepted on inputs with
no regard to the supply voltage. This device can
be used to interface 5V to 3V systems.
It's available in the commercial and extended
temperature range. All inputs and output are
equipped with protection circuits against static
discharge, giving them ESD immunity and
transient excess voltage.
74V1G79
SINGLE POSITIVE EDGE TRIGGERED
D-TYPE FLIP-FLOP
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
T & R
SOT23-5L
74V1G79STR
SOT323-5L
74V1G79CTR
SOT323-5L
SOT23-5L
74V1G79
2/10
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
1) V
IN
from 30% to 70% of V
CC
PIN No
SYMBOL
NAME AND FUNCTION
1
D
Data Input
2
CK
Clock Input (Positive
Edge)
4
Q
Flip-Flop Output
3
GND
Ground (0V)
5
V
CC
Positive Supply Voltage
D
CK
Q
L
L
H
H
L
Qn
H
Qn
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7.0
V
V
I
DC Input Voltage
-0.5 to +7.0
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
- 20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
260
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
2 to 5.5
V
V
I
Input Voltage
0 to 5.5
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
dt/dv
Input Rise and Fall Time (note 1) (V
CC
= 3.3
0.3V)
(V
CC
= 5.0
0.5V)
0 to 100
0 to 20
ns/V
ns/V
74V1G79
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DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3ns)
(*) Voltage range is 3.3V
0.3V
(**) Voltage range is 5.0V
0.5V
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
1.5
V
3.0 to
5.5
0.7V
CC
0.7V
CC
0.7V
CC
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
0.5
V
3.0 to
5.5
0.3V
CC
0.3V
CC
0.3V
CC
V
OH
High Level Output
Voltage
2.0
I
O
=-50
A
1.9
2.0
1.9
1.9
V
3.0
I
O
=-50
A
2.9
3.0
2.9
2.9
4.5
I
O
=-50
A
4.4
4.5
4.4
4.4
3.0
I
O
=-4 mA
2.58
2.48
2.4
4.5
I
O
=-8 mA
3.94
3.8
3.7
V
OL
Low Level Output
Voltage
2.0
I
O
=50
A
0.0
0.1
0.1
0.1
V
3.0
I
O
=50
A
0.0
0.1
0.1
0.1
4.5
I
O
=50
A
0.0
0.1
0.1
0.1
3.0
I
O
=4 mA
0.36
0.44
0.55
4.5
I
O
=8 mA
0.36
0.44
0.55
I
I
Input Leakage
Current
0 to
5.5
V
I
= 5.5V or GND
0.1
1
1
A
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
1
10
20
A
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
C
L
(pF)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time CK to Q
3.3
(*)
15
5.4
8.0
1.0
9.5
1.0
10.5
ns
3.3
(*)
50
5.9
8.5
1.0
10.0
1.0
11.0
5.0
(**)
15
3.9
5.5
1.0
6.5
1.0
7.5
5.0
(**)
50
4.5
6.5
1.0
7.5
1.0
8.5
t
W
CK Pulse Width,
HIGH or LOW
3.3
(*)
4.0
4.0
4.0
ns
5.0
(**)
3.0
3.0
3.0
t
s
Setup Time D to
CK, HIGH or LOW
3.3
(*)
4.0
4.0
4.0
ns
5.0
(**)
3.0
3.0
3.0
t
h
Hold Time D to CK,
HIGH or LOW
3.3
(*)
1.0
1.0
1.0
ns
5.0
(**)
1.0
1.0
1.0
f
MAX
Maximum Clock
Frequency
3.3
(*)
50
100
120
90
90
MHz
5.0
(**)
50
165
180
150
150
74V1G79
4/10
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
TEST CIRCUIT
C
L
= 15/50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50
)
Symbol
Parameter
Test Condition
Value
Unit
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
4
10
10
10
pF
C
PD
Power Dissipation
Capacitance
(note 1)
8
pF
74V1G79
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WAVEFORM: PROPAGATION DELAY, SETUP AND HOLD TIMES (f=1MHz; 50% duty cycle)
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