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Электронный компонент: 74H1G66S

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74H1G66
SINGLE BILATERAL SWITCH
February 2000
s
HIGH SPEED: t
PD
= 4 ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 1
A (MAX.) at T
A
= 25
o
C
s
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
s
LOW "ON" RESISTANCE
R
ON
= 50
(TYP.) AT V
CC
=9V I
I/O
=100
A
s
SINE WAVE DISTORTION
0.042% (TYP.) AT V
CC
=4V f=1KHz
s
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 12V
DESCRIPTION
The 74H1G66 is an high-speed CMOS SINGLE
BILATERAL SWITCH fabricated in silicon gate
C
2
MOS
technology.
It
has
high
speed
performance combined with true CMOS low
power consumption.
The C input is provided to control the switch; the
switch is ON when the C input is held high and off
when C is held low.
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES :
74H1G66S
S
(SOT23-5L)
1/8
LOGIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
V
CC
Supply Voltage
-0.5 to +13
V
V
I
DC Input Voltage
-0.5 to V
CC
+0.5
V
V
I/O
DC Input/Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
Control Input DC Diode Current
20
mA
I
IOK
Input/Output DC Diode Current
20
mA
I
O
DC Output Source Sink Current Per Output Pin
25
mA
I
CC
or I
GND
DC V
CC
or Ground Current
50
mA
P
D
Power Dissipation
500 (*)
mW
T
stg
Storage Temperature
-65 to +150
o
C
T
L
Lead Temperature (10 sec)
300
o
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
(*) 500mW:
65
o
C derate to 300 mW by 10 mW/
o
C: 65
o
C to85
o
C
TRUTH TABLE
CONTROL
SWITCH F UNCTIO N
H
ON
L
OFF
PIN DESCRIPTION
PI N No
SYMBOL
NAME AND FUNCT ION
1
I/O
Independent Input/Output
2
O/I
Independent Output/Input
4
C
Enable Input (Active
HIGH)
3
GND
Ground (0V)
5
V
CC
Positive Supply Voltage
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Valu e
Uni t
V
CC
Supply Voltage
2.0 to 12
V
V
I
Input Voltage (Control)
0 to V
CC
V
V
I/O
Input/Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-40 to +85
o
C
t
r
, t
f
Input Rise and Fall Time
V
CC
= 2V
0 to 1000
ns
V
CC
= 4.5V
0 to 500
V
CC
= 6V
0 to 400
V
CC
= 10V
0 to 250
74H1G66
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DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
Val ue
Un it
V
CC
(V)
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
V
IH
High Level Input
Voltage
2.0
1.5
1.5
V
4.5
3.15
3.15
9.0
6.3
6.3
12.0
8.4
8.4
V
IL
Low Level Input
Voltage
2.0
0.5
0.5
V
4.5
1.35
1.35
9.0
2.7
2.7
12.0
3.6
3.6
R
ON
ON Resistance
4.5
V
I
= V
IH
V
I/ O
= V
CC
to GND
I
I /O
1mA
96
170
200
9.0
55
85
100
12.0
45
80
90
4.5
V
I
= V
IH
V
I /O
= V
CC
or GND
I
I /O
1mA
70
100
130
9.0
50
75
95
12.0
45
70
90
I
OFF
Input/Output Leakage
Current (SWITCH OFF)
12.0
V
O S
= V
CC
to GND
V
IS
= V
CC
to GND
V
I
= V
I L
0.1
1.0
A
I
IZ
Switch Input Leakage
Current (SWITCH ON,
OUTPUT OPEN)
12.0
V
O S
= V
CC
to GND
V
I
= V
IH
0.1
1.0
A
I
IN
Control Input Current
6.0
V
I
= V
CC
to G ND
0.1
1.0
A
I
CC
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
1
10
A
9.0
4
40
12.0
8
80
74H1G66
3/8
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
=6 ns)
Symb ol
Parameter
Test Co nditi on
Val ue
Un it
V
CC
(V)
T
A
= 25
o
C
-40 to 85
o
C
Min.
Typ .
Max.
Min .
Max.
I/O
Phase Difference
Between Input and
Output
2.0
10
50
65
ns
4.5
4
10
15
9.0
3
8
13
12.0
3
7
10
t
PZL
t
PZH
Output Enable Time
2.0
R
L
= 1 K
18
100
125
ns
4.5
8
20
25
9.0
6
12
22
12.0
6
12
18
t
PLZ
t
PHZ
Output Disable Time
2.0
R
L
= 1 K
20
115
145
ns
4.5
10
23
29
9.0
8
20
25
12.0
8
18
22
Maximum Control
Input Frequency
2.0
R
L
= 1 K
C
L
= 15 pF
V
OUT
= 1/ 2V
CC
30
MHz
4.5
30
9.0
30
12.0
30
C
IN
Input Capacitance
5
10
10
pF
C
I/O
Switch Terminal
Capacitance
6
pF
C
IOS
Feed Through
Capacitance
0.5
pF
C
PD
Power Dissipation
Capacitance (note 1)
15
pF
1) C
PD
isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. I
CC
(opr) = C
PD
V
CC
f
IN
+ I
CC
ANALOG SWITCH CHARACTERISTICS (GND = 0 V, T
A
= 25
o
C)
Symb ol
Parameter
Test Co ndi ti on
Val ue
Un it
V
CC
(V)
V
IN
(Vp-p)
Sine Wave Distortion
(THD)
4.5
4
f
IN
= 1 KHz
R
L
= 10K
C
L
= 50 pF
0.05
%
9.0
8
0.04
f
MAX
Frequency Responce
(Switch ON)
4.5
Adjust f
I N
voltage to Obt ain odBm at V
O S
.
Increase f
IN
Frequency until dB Meter reads -3dB
R
L
= 50
,
C
L
= 10pF
200
MHz
9.0
200
Feedthrough
Attenuation
(Switch OFF)
4.5
V
IN
is centered at V
CC
/2. Adjust input f or 0dBm
R
L
= 600
, C
L
= 50pF , f
I N
= 1MHz sine wave
-60
dB
9.0
-60
Crosstalk (Control
Input to Signal Ouput)
4.5
R
L
= 600
, C
L
= 50pF , f
I N
= 1MHz sine wave
(t
r
= t
f
= 6ns)
60
mV
9.0
100
74H1G66
4/8
SWITCHING CHARACTERISTICS TEST CIRCUIT
CROSSTALK (control to output)
GND (V
SS
)
t
PLZ
, t
PHZ
, t
PZL
, t
PZH
.
BANDWIDTH AND FEEDTHROUGH
ATTENUATION
C
IO
C
I/O
MAXIMUM CONTROL FREQUENCY
GND (V
SS
)
74H1G66
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