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Электронный компонент: 74ACT573M

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1/11
April 2001
s
HIGH SPEED: t
PD
= 5ns (TYP.) at V
CC
= 5V
s
LOW POWER DISSIPATION:
I
CC
= 4
A(MAX.) at T
A
=25C
s
COMPATIBLE WITH TTL OUTPUTS
V
IH
= 2V (MIN.), V
IL
= 0.8V (MAX.)
s
50
TRANSMISSION LINE DRIVING
CAPABILITY
s
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24mA (MIN)
s
BALANCED PROPAGATION DELAYS:
t
PLH
t
PHL
s
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
s
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 573
s
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74ACT573 is an advanced high-speed CMOS
OCTAL D-TYPE LATCH with 3 STATE OUTPUT
NON INVERTING fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
These 8 bit D-Type latch are controlled by a latch
enable input (LE) and an output enable input (OE).
While the LE inputs is held at a high level, the Q
outputs will follow the data input .
When the LE is taken low, the Q outputs will be
latched precisely or inversely at the logic level of D
input data. While the (OE) input is low, the 8
outputs will be in a normal logic state (high or low
logic level) and while high level the outputs will be
in a high impedance state.
This device is designed to interface directly High
Speed CMOS systems with TTL and NMOS
components.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
74ACT573
OCTAL D-TYPE LATCH
WITH 3 STATE OUTPUTS (NON INVERTED)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
TUBE
T & R
DIP
74ACT573B
SOP
74ACT573M
74ACT573MTR
TSSOP
74ACT573TTR
TSSOP
DIP
SOP
74ACT573
2/11
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
X : Don't care
Z : High Impedance
NOTE: Outputs are latched at the time when the input is taken LOW logic level
LOGIC DIAGRAM
This logic diagram has not be used to estimate propagation delays
PIN No
SYMBOL
NAME AND FUNCTION
1
OE
3 State Output Enable
Input (Active LOW)
2, 3, 4, 5, 6,
7, 8, 9
D0 to D7
Data Inputs
12, 13, 14,
15, 16, 17,
18, 19
Q0 to Q7
3-State Latch Outputs
11
LE
Latch Enable Input
10
GND
Ground (0V)
20
V
CC
Positive Supply Voltage
INPUTS
OUTPUT
OE
LE
D
Q
H
X
X
Z
L
L
X
NO CHANGE
L
H
L
L
L
H
H
H
74ACT573
3/11
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
1) V
IN
from 0.8V to 2.0V
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
-0.5 to +7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
20
mA
I
OK
DC Output Diode Current
20
mA
I
O
DC Output Current
50
mA
I
CC
or I
GND
DC V
CC
or Ground Current
400
mA
T
stg
Storage Temperature
-65 to +150
C
T
L
Lead Temperature (10 sec)
300
C
Symbol
Parameter
Value
Unit
V
CC
Supply Voltage
4.5 to 5.5
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output Voltage
0 to V
CC
V
T
op
Operating Temperature
-55 to 125
C
dt/dv
Input Rise and Fall Time V
CC
= 4.5 to 5.5V (note 1)
8
ns/V
74ACT573
4/11
DC SPECIFICATIONS
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, R
L
= 500
, Input t
r
= t
f
= 3ns)
(*) Voltage range is 5.0V
0.5V
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
V
IH
High Level Input
Voltage
4.5
V
O
= 0.1 V or
V
CC
-0.1V
2.0
1.5
2.0
2.0
V
5.5
2.0
1.5
2.0
2.0
V
IL
Low Level Input
Voltage
4.5
V
O
= 0.1 V or
V
CC
-0.1V
1.5
0.8
0.8
0.8
5.5
1.5
0.8
0.8
0.8
V
V
OH
High Level Output
Voltage
4.5
I
O
=-50
A
4.4
4.49
4.4
4.4
5.5
I
O
=-50
A
5.4
5.49
5.4
5.4
4.5
I
O
=-24 mA
3.86
3.76
3.7
V
5.5
I
O
=-24 mA
4.86
4.76
4.7
V
OL
Low Level Output
Voltage
4.5
I
O
=50
A
0.001
0.1
0.1
0.1
5.5
I
O
=50
A
0.001
0.1
0.1
0.1
4.5
I
O
=24 mA
0.36
0.44
0.5
5.5
I
O
=24 mA
0.36
0.44
0.5
I
I
Input Leakage Cur-
rent
5.5
V
I
= V
CC
or GND
0.1
1
1
A
I
OZ
High Impedance
Output Leakege
Current
5.5
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
0.5
5
5
A
I
CCT
Max I
CC
/Input
5.5
V
I
= V
CC
- 2.1V
0.6
1.5
1.6
mA
I
CC
Quiescent Supply
Current
5.5
V
I
= V
CC
or GND
4
40
80
A
I
OLD
Dynamic Output
Current (note 1, 2)
5.5
V
OLD
= 1.65 V max
75
50
mA
I
OHD
V
OHD
= 3.85 V min
-75
-50
mA
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagation Delay
Time LE to Q
5.0
(*)
5.0
10.0
12.0
12.0
ns
t
PLH
t
PHL
Propagation Delay
Time D to Q
5.0
(*)
5.0
10.0
12.0
12.0
ns
t
PZL
t
PZH
Output Enable
Time
5.0
(*)
5.5
10.0
12.0
12.0
ns
t
PLZ
t
PHZ
Output Disable
Time
5.0
(*)
6.5
11.0
12.0
12.0
ns
t
W
Minimum Pulse
Width HIGH LE
5.0
(*)
1.0
3.0
4.0
4.0
ns
t
s
Setup Time D to
LE, HIGH or LOW
5.0
(*)
0.0
2.0
3.0
3.0
ns
t
h
Hold Time D to LE,
HIGH or LOW
5.0
(*)
0.0
2.0
3.0
3.0
ns
74ACT573
5/11
CAPACITIVE CHARACTERISTICS
1) C
PD
is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/n (per circuit)
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= R
1
= 500
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
)
Symbol
Parameter
Test Condition
Value
Unit
V
CC
(V)
T
A
= 25C
-40 to 85C
-55 to 125C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
C
IN
Input Capacitance
5.0
4
pF
C
OUT
Output
Capacitance
5.0
8
pF
C
PD
Power Dissipation
Capacitance (note
1)
5.0
f
IN
= 10MHz
25
pF
TEST
SWITCH
t
PLH
, t
PHL
Open
t
PZL
, t
PLZ
2V
CC
t
PZH
, t
PHZ
Open