P Channel Enchancement Mode MOSFET ST2305
-3.5A
DESCRIPTION
The ST2305 is the P-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23-3L
1.Gate 2.Source 3.Drain
S: Subcontractor Y: Year Code A: Process Code
Page 1
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
FEATURE
-
10V/-3.5A, R
DS(ON)
= 50m-ohm
@VGS = -4.5V
-10V/-3.0A, R
DS(ON)
= 70m-ohm
@VGS = -2.5V
-10V/-2.0A, R
DS(ON)
= 105m-ohm
@VGS=-1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3
1
2
D
G S
3
1
2
S05YA
P Channel Enchancement Mode MOSFET ST2305
-3.5A
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter Symbol
Typical
Unit
Drain-Source Voltage
V
DSS
-10 V
Gate-Source Voltage
V
GSS
+/-12 V
Continuous Drain Current (TJ=150)
T
A
=25
T
A
=70
I
D
-3.5
-2.8
A
Pulsed Drain Current
I
DM
-10 A
Continuous Source Current (Diode Conduction)
I
S
-1.6 A
Power Dissipation
T
A
=25
T
A
=70
P
D
1.25
0.8
W
Operation Junction Temperature
T
J
150
Storgae Temperature Range
T
STG
-55/150
Thermal Resistance-Junction to Ambient
R
JA
120 /W
\
Page 2
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enchancement Mode MOSFET ST2305
-3.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter Symbol
Condition
Min
Typ
Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
=0V,I
D
=-250uA
-10
V
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA -0.45 -1.5
V
Gate Leakage Current
I
GSS
V
DS
=0V,V
GS
=+/-12V 100 nA
V
DS
=-20V,V
GS
=0V -1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=-20V,V
GS
=0V
T
J
=55
-10
uA
On-State Drain Current
I
D(on)
V
DS
-5V,V
GS
=-4.5V
V
DS
-5V,V
GS
=-2.5V
-6
-3
A
Drain-source On-Resistance
R
DS(on)
V
GS
=-4.5V,I
D
=-3.5A
V
GS
=-2.5V,I
D
=-2.0A
V
GS
=-1.8V,I
D
=-2.0A
0.045
0.55
0.09
0.05
0.07
0.105
Forward Transconductance
g
fs
V
DS
=-5V,I
D
=-3.5V 8.5 S
Diode Forward Voltage
V
SD
I
S
=-1.6A,V
GS
=0V -0.8
-1.2
V
Dynamic
Total Gate Charge
Qg
10
12
Gate-Source Charge
Qgs
2
Gate-Drain Charge
Qgd
V
DS
=-10V,V
GS
=-4.5V
I
D
-3.5A
2
nC
Input Capacitance
Ciss
1200
Output Capacitance
Coss
300
Reverse Transfer Capacitance
Crss
V
DS
=-10V,V
GS
=0V
F=1MHz
210
pF
13 25
Turn-On Time
t
d(on)
t
r
20 35
42 70
Turn-Off Time
t
d(off)
t
f
V
DD
=-10V,R
L
=6
I
D
=-1.0A,V
GEN
=-4.5V
R
G
=6
20 35
nS
Page 3
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enchancement Mode MOSFET ST2305
-3.5A
SOT-23-3L PACKAGE OUTLINE
Page 4
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
P Channel Enchancement Mode MOSFET ST2305
-3.5A
TYPICAL CHARACTERICTICS (25 Unless noted)
Page 5
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