PNP TRANSISTOR B772
3.0A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSTa=25
PARAMETERS
SYMBOL MIN TYP MAX
UNIT
CONDITION
Collector-Emitter Breakdown Voltage
BVceo
-30
V
Ic=-1mA
Collector-Base Breakdown Voltage
BVcbo
-4 0
V
Ic=-5uA
Emitter-Base Breakdown Voltage
BVebo
-5
V
Ie=-50A
Collector-Base Leakage
Icbo
-0.1
uA
Vcb=-10V
Emitter-Base Leakage
Iebo
-0.1
uA
Veb=-5V
Collector-Emitter Saturation Voltage Vcesat
-0.5
V
Ic=-2A, Ib=-0.1A
DC Current Gain
Hfe1
80
390
Vce=-2V,Ic=-0.5A
Collector Current
Ic
-3
A
Peak Collector Current
Icp
-5
A(Pulse)
Current Gain Bandwidth
f
T
50
MHz
Vcb=-5V, Ic=-0.1A
Output Capacitance
Cob
50
pF
Vcb=-10V,Ie=0,f=1MHz
Power Dissipation
Pc
1.25
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55
150
Classification of Hfe
Rank
R
O
Y
Range
80-160
100-200
170-390
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