Product Description
SSW-308
DC-3 GHz Low Cost
GaAs MMIC SPDT Switch
Product Features
Fast Switching Speed : 3nsec
HIgh LInearity : +47dBm IP3
Ultra Low DC Power Consumption
Low Insertion Loss : 0.7dB at 1GHz
Low Cost Small Outline Plastic Package
Applications
Digital Cellular
Spread Spectrum
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Stanford Microdevices' SSW-308 is a high perfomance
Gallium Arsenide Field Effect Transistor MMIC switch housed
in a low-cost surface-mountable small outline plastic
package.
This single-pole, double-throw, reflective switch consumes
less than 40uA and operates with 0V/-5V control voltages.
This switch can be used in both analog and digital wireless
communication systems including AMPS, PCS, DECT, and
GSM.
Typical output power at 1dB compression is +28dBm. 1dB
output power over 1 watt may be achieved with higher
control voltages.
The die is fabricated using 0.5 micron FET process with gold
metallization and silicon nitride passivation to achieve
excellent performance and reliability.
S y m b o l
P a r a m e t e r s : T e s t C o n d i t i o n s :
Z
0
= 5 0 o h m s
U n i t s
M i n .
T y p .
M a x .
In s
In s e r tio n L o s s
f = 0 .0 5 - 1 .0 G H z
f = 1 .0 0 - 2 .0 G H z
f = 1 .0 0 - 3 .0 G H z
d B
d B
d B
0 .6
0 .9
1 .2
0 .9
1 .3
Is o l
Is o la tio n
f = 0 .0 5 - 1 .0 G H z
f = 1 .0 0 - 2 .0 G H z
f = 1 .0 0 - 3 .0 G H z
d B
d B
d B
2 0
1 7
2 5
2 2
1 6
V S W R o n
In p u t & O u tp u t V S W R
( lo w lo s s s ta te )
f = 0 .0 5 - 1 .0 G H z
f = 1 .0 0 - 2 .0 G H z
f = 1 .0 0 - 3 .0 G H z
-
-
-
1 .2 :1
1 .4 :1
1 .7 :1
P
1 d B
1 d B C o m p r e s s io n a t 0 .5 - 2 .0 G H z
V = - 8 V
V = - 5 V
d B m
d B m
+ 3 1
+ 2 8
IP
3
T h ir d O r d e r In te r c e p t
V = - 8 V
V = - 5 V
d B m
d B m
+ 5 0
+ 4 7
I
D
D e v ic e C u r r e n t
u A
3 5
Is w
S w itc h in g S p e e d 5 0 % c o n tr o l to
1 0 % /9 0 % R F
n s e c
3
Electrical Specifications at Ta = 25C
Switches
Isolation vs. Frequency
V
Control
= -5 V
GHz
dB
-50
-40
-30
-20
-10
DC
1
2
3
7-21
SSW-308 DC-3 GHz GaAs MMIC SPDT Switch
Absolute Maximum Ratings
RF Input Power
2W Max>500MHz
Control Voltage
-10V
Operating Temperature
-45Cto +85C
Storage Temperature
-65C to +150C
Thermal Resistance
20 deg C/W
Truth Table
Insertion Loss vs. Frequency
V
Control
= -5 V
On Port VSWR vs. Frequency
V
Control
= -5 V
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
V1
V2
J1- J2
J1- J3
0
- 5
Low Loss
I sol at i on
- 5
0
I sol at i on
Low Loss
Switches
dB
GHz
GHz
-2.0
-1.5
-1.0
-0.5
0.0
DC
1
2
3
1.0
1.2
1.4
1.6
1.8
2.0
DC
1
2
3
Pin Out
P i n
F u n c t i o n
1
V 1
2
J 1
3
G N D
4
V 2
5
J 3
6
G N D
7
G N D
8
J 2
Switch Schematic
7-22
PDF 
ZIP