The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
1
Product Description
Preliminary
EDS-101428 Rev A
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
522 Almanor Ave., Sunnyvale, CA 94085
SPA-1218
1960 MHz 1 Watt Power Amp with
Active Bias
Product Features
On-chip Active Bias Control
Patented High Reliability GaAsHBT Technology
High Linearity Performance: +48dBm OIP3 Typ.
Surface-Mountable Plastic Package
Applications
PCS Systems
Multi-Carrier Applications
Stanford Microdevices' SPA-1218 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 1950 MHz PCS
band. Its high linearity makes it an ideal choice for multi-carrier
and digital applications.
l
o
b
m
y
S
:
s
n
o
i
t
i
d
n
o
C
t
s
e
T
:
s
r
e
t
e
m
a
r
a
P
Z
0
7
2
=
p
m
e
T
,
V
5
=
C
C
V
,
s
m
h
O
0
5
=
C
s
t
i
n
U
.
n
i
M
.
p
y
T
.
x
a
M
f
0
n
o
it
a
r
e
p
O
f
o
y
c
n
e
u
q
e
r
F
z
H
M
0
3
9
1
0
9
9
1
P
B
d
1
n
o
i
s
s
e
r
p
m
o
C
B
d
1
t
a
r
e
w
o
P
t
u
p
t
u
O
c
V
1
c
V
,
s
a
i
b
V
,
2
V
0
.
5
=
m
B
d
5
.
9
2
S
1
2
n
i
a
G
l
a
n
g
i
S
ll
a
m
S
B
d
0
.
2
1
S
1
1
R
W
S
V
t
u
p
n
I
-
1
:
5
.
1
P
I
O
3
t
n
i
o
P
t
p
e
c
r
e
t
n
I
r
e
d
r
O
d
r
i
h
T
t
u
p
t
u
O
m
B
d
4
1
+
=
e
n
o
t
r
e
p
t
u
o
r
e
w
o
P
m
B
d
0
.
8
4
c
c
I
V
5
=
C
C
V
,
t
n
e
r
r
u
C
e
c
i
v
e
D
A
m
0
2
3
R
h
t
l
-
j
,
)
d
a
e
l
-
n
o
it
c
n
u
j
(
e
c
n
a
t
s
i
s
e
R
l
a
m
r
e
h
T
W
/
C
0
4
VCC
VBIAS
RFIN
N/C
RFOUT/
VCC
Active
Bias
Input
Match
2
Preliminary
Preliminary
SPA-1218 1950 MHz 1 Watt Power Amp.
EDS-101428 Rev A
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
522 Almanor Ave., Sunnyvale, CA 94085
20
22
24
26
28
30
32
1.93
1.94
1.95
1.96
1.97
1.98
1.99
25C
-40C
85C
8
10
12
14
16
1.93
1.94
1.95
1.96
1.97
1.98
1.99
25C
-40C
85C
-40
-35
-30
-25
-20
-15
-10
-5
0
1.93
1.94
1.95
1.96
1.97
1.98
1.99
20
25
30
35
40
45
50
55
1.93
1.94
1.95
1.96
1.97
1.98
1.99
25C
-40C
85C
20
25
30
35
40
45
50
55
8
13
18
23
25C
-40C
85C
-50
0
50
100
150
200
250
300
350
400
0
1
2
3
4
5
25C
-40C
85C
P1dB vs Frequency
GHz
dBm
1950 MHz Application Circuit Data, Icc=320 mA, T=+27C, VCC=5V
Note: Tuned for Output IP3
Input/Output Return Loss,
Isolation vs Frequency
GHz
dB
S11
S22
GHz
Gain vs. Frequency
dB
Output Third Order Intercept vs.
Frequency (P
OUT
per tone = 11dBm)
GHz
dBm
Output Third Order Intercept vs.
Tone Power, 1.96 GHz
P
OUT
per tone (dBm)
dBm
S12
Device Current vs. Source Voltage
V
S
(V)
Device Current (mA)
Preliminary
Preliminary
SPA-1218 1950 MHz 1 Watt Power Amp.
3
EDS-101428 Rev A
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
522 Almanor Ave., Sunnyvale, CA 94085
1930-1990 MHz Schematic
1930-1990 MHz Evaluation Board Layout
Vcc
1.8 pF
22nH,
LL1608-FS
270pF
0.047uF
10uF,
Tantalum
68pF
22pF
Z=50
, 23.6
390
1
2
3
4
8
7
6
5
100nH,
LL1608-FS
Vpc
Vcc
SOIC-8 PA
ECB-101161 Rev. B
Eval Board
Vbias
1.8pF
22nH
270pF
0.047uF
10uF Tantalum
100nH
22pF
68pF
LL1608-FS
390W
LL1608-FS
4
Preliminary
Preliminary
SPA-1218 1950 MHz 1 Watt Power Amp.
EDS-101428 Rev A
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
522 Almanor Ave., Sunnyvale, CA 94085
#
n
i
P
n
o
i
t
c
n
u
F
n
o
i
t
p
i
r
c
s
e
D
c
i
t
a
m
e
h
c
S
e
c
i
v
e
D
1
C
C
V
.
k
r
o
w
t
e
n
s
a
i
b
e
v
it
c
a
e
h
t
r
o
f
e
g
a
tl
o
v
y
l
p
p
u
s
e
h
t
s
i
C
C
V
n
o
n
w
o
h
s
s
a
n
o
it
a
c
o
l
e
t
a
ir
p
o
r
p
p
a
e
h
t
n
i
g
n
i
s
s
a
p
y
B
F
R
m
u
m
it
p
o
r
o
f
d
e
r
i
u
q
e
r
s
i
c
it
a
m
e
h
c
s
n
o
it
a
c
il
p
p
a
.
e
c
n
a
m
r
o
f
r
e
p
2
s
a
i
b
V
.
k
r
o
w
t
e
n
s
a
i
b
e
v
it
c
a
e
h
t
r
o
f
n
i
p
l
o
r
t
n
o
c
s
a
i
b
e
h
t
s
i
s
a
i
b
V
.
n
i
p
s
i
h
t
o
t
n
i
t
n
e
r
r
u
c
e
h
t
y
b
t
e
s
s
i
t
n
e
r
r
u
c
e
c
i
v
e
D
n
o
it
a
c
il
p
p
A
e
h
t
n
i
n
w
o
h
s
s
i
n
o
it
a
r
u
g
if
n
o
c
d
e
d
n
e
m
m
o
c
e
R
s
a
n
o
it
a
c
o
l
e
t
a
ir
p
o
r
p
p
a
e
h
t
n
i
g
n
i
s
s
a
p
y
B
.
c
it
a
m
e
h
c
S
m
u
m
it
p
o
r
o
f
d
e
r
i
u
q
e
r
s
i
c
it
a
m
e
h
c
s
n
o
it
a
c
il
p
p
a
n
o
n
w
o
h
s
.
e
c
n
a
m
r
o
f
r
e
p
F
R
3
n
I
F
R
l
a
n
r
e
t
x
e
n
a
f
o
e
s
u
e
h
t
s
e
r
i
u
q
e
r
n
i
p
s
i
h
T
.
n
i
p
t
u
p
n
i
F
R
f
o
y
c
n
e
u
q
e
r
f
e
h
t
r
o
f
n
e
s
o
h
c
r
o
ti
c
a
p
a
c
g
n
i
k
c
o
l
b
C
D
.
n
o
it
a
r
e
p
o
4
C
/
N
n
o
it
c
e
n
n
o
c
o
N
5
c
c
V
/t
u
O
F
R
s
i
h
t
o
t
d
e
il
p
p
u
s
e
b
d
l
u
o
h
s
s
a
i
B
.
n
i
p
s
a
i
b
d
n
a
t
u
p
t
u
o
F
R
g
n
i
s
a
i
b
C
D
e
s
u
a
c
e
B
.
e
k
o
h
c
F
R
l
a
n
r
e
t
x
e
n
a
h
g
u
o
r
h
t
n
i
p
d
l
u
o
h
s
r
o
ti
c
a
p
a
c
g
n
i
k
c
o
l
b
C
D
a
,
n
i
p
s
i
h
t
n
o
t
n
e
s
e
r
p
s
i
n
o
it
a
c
il
p
p
a
e
e
s
(
s
n
o
it
a
c
il
p
p
a
t
s
o
m
n
i
d
e
s
u
e
b
d
l
u
o
h
s
k
r
o
w
t
e
n
s
a
i
b
e
h
t
f
o
e
d
i
s
y
l
p
p
u
s
e
h
T
.
)
c
it
a
m
e
h
c
s
s
i
k
r
o
w
t
e
n
g
n
i
h
c
t
a
m
t
u
p
t
u
o
n
A
.
d
e
s
s
a
p
y
b
ll
e
w
e
b
.
e
c
n
a
m
r
o
f
r
e
p
m
u
m
it
p
o
r
o
f
y
r
a
s
s
e
c
e
n
6
c
c
V
/t
u
O
F
R
5
n
i
P
s
a
e
m
a
S
7
c
c
V
/t
u
O
F
R
5
n
i
P
s
a
e
m
a
S
8
c
c
V
/t
u
O
F
R
5
n
i
P
s
a
e
m
a
S
2
3
1
5-8
ACTIVE BIAS
NETWORK
Absolute Maximum Ratings
r
e
t
e
m
a
r
a
P
e
u
l
a
V
t
i
n
U
I
(
t
n
e
r
r
u
C
y
l
p
p
u
S
D
)
0
5
7
A
m
V
(
e
g
a
tl
o
V
e
c
i
v
e
D
D
)
0
.
6
V
n
o
it
a
p
i
s
s
i
D
r
e
w
o
P
0
.
4
W
T
(
e
r
u
t
a
r
e
p
m
e
T
g
n
it
a
r
e
p
O
P
O
)
5
8
+
o
t
0
4
-
C
r
e
w
o
P
t
u
p
n
I
F
R
0
0
5
+
W
m
e
g
n
a
R
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
0
5
1
+
o
t
0
4
-
C
T
(
e
r
u
t
a
r
e
p
m
e
T
n
o
it
c
n
u
J
g
n
it
a
r
e
p
O
J
)
0
5
1
+
C
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: I
D
V
D
(max) < (T
J
- T
OP
)/R
th
,j-l
Preliminary
Preliminary
SPA-1218 1950 MHz 1 Watt Power Amp.
5
EDS-101428 Rev A
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
522 Almanor Ave., Sunnyvale, CA 94085
r
e
b
m
u
N
t
r
a
P
l
e
e
R
r
e
P
s
e
c
i
v
e
D
e
z
i
S
l
e
e
R
8
1
2
1
-
A
P
S
0
0
5
"
7
Part Number Ordering Information
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
.078 [1.969]
DETAIL A
.061 [1.549]
.155 [3.937]
.025
.013 [.33] x 45
.008
.003 [.076]
SEATING PLANE
1
5
3
2
BOTTOM VIEW
.058 [1.473]
TOP VIEW
SIDE VIEW
END VIEW
PARTING LINE
.008 [.203]
.045 [1.143]
.035 [.889]
4
6
7
8
.194 [4.93]
.061 [1.549]
.016 [.406]
.050 [1.27]
.194 [4.928]
5
SEE DETAIL A
.236 [5.994]
.155 [3.937]
EXPOSED PAD
Package Outline Drawing
Recommended Land Pattern
.16 [4.02]
.11 [2.71]
.33 [8.42]
.15 [3.81]
.24 [6.22]
.05 [1.27]
.02 [.60]
XXXX
SPA
1218
Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling
information for Exposed Pad
TM
SOIC-8 products) to ensure no moisture is trapped in the encapsulated
package. In production, this baking procedure is not necessary if parts are used within 24 hours of opening
the sealed shipping materials.
Note: XXXX represents the lot code
PDF 
ZIP