Product Description
Stanford Microdevices' SLN-186 is a high performance
gallium arsenide heterojunction bipolar transistor MMIC
housed in a low-cost surface mount plastic package. A
Darlington configuration is used for broadband performance
from DC-4.0 GHz.
The SLN-186 needs only 2 DC-blocking capacitors and a
bias resistor for operation. Noise figure may be optimized by
using 2-element matching at the input to yield <2.0dB noise
figure.
This 50 Ohm LNA requires only a single supply voltage and
draws only 8mA. For broadband applications, it may be
biased at 6mA with minimal effect on noise figure and gain.
The SLN-186 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
SLN-186
DC-4.0 GHz, 3.5 Volt
50 Ohm LNA MMIC Amplifier
Product Features
Patented, Reliable GaAs HBT Technology
Low Noise Figure: 2.0dB from 0.1 to 1.5 GHz
High Associated Gain: 22dB Typ. at 2.0 GHz
True 50 Ohm MMIC : No External Matching
Required
Low Current Draw : Only 8mA
Low Cost Surface Mount Plastic Package
Applications
AMPS, PCS, DECT, Handsets
Tri-Band & Broadband Receivers
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
S y m b o l
P a r a m e t e r s : T e s t C o n d i t io n s
U n i t s
M in .
T y p .
M a x .
N F
5 0 O h m
N o is e F ig u r e in 5 0 O h m s :
V d s = 3 .5 V, I d s = 8 m A
f = D C - 1 .5 G H z
f = 1 . 5 - 4 .0 G H z
d B
d B
2 .0
2 .4
2 .4
S
2 1
5 0 O h m G a i n :
V d s = 3 .5 V, I d s = 8 m A
f = D C - 1 .5 G H z
f = 1 . 5 - 4 .0 G H z
d B
1 9
2 2
2 0
V S W R
5 0 O h m M a t c h ( In p u t a n d O u tp u t) :
V d s = 3 .5 V, I d s = 8 m A
f = D C - 1 .5 G H z
f = 1 . 5 - 4 .0 G H z
-
1 .8 :1
3 .0 :1
N F
5 0 O h m
N o is e F ig u r e in 5 0 O h m s :
V d s = 3 .2 V, I d s = 6 m A
f = D C - 1 .5 G H z
f = 1 . 5 - 4 .0 G H z
d B
d B
2 .2
2 .6
2 .5
S
2 1
5 0 O h m G a i n :
V d s = 3 .2 V, I d s = 6 m A
f = D C - 1 .5 G H z
f = 1 . 5 - 4 .0 G H z
d B
1 4
1 7
1 6
V S W R
5 0 O h m M a t c h ( In p u t a n d O u tp u t) :
V d s = 3 .2 V, I d s = 6 m A
f = D C - 1 .5 G H z
f = 1 . 5 - 4 .0 G H z
-
1 .4 :1
2 .5 :1
P
1 d B
O u t p u t P o w e r a t 1 d B C o m p r e s s io n :
f = D C - 1 .5 G H z
V d = 3 .5 V, Id = 8 m A
V d = 3 .2 V, Id = 6 m A
d B m
d B m
- 1 0
- 1 2
IP
3
T h ir d O r d e r In t e r c e p t P o in t:
f = D C - 1 .5 G H z
V d = 3 .5 V, Id = 8 m A
V d = 3 .2 V, Id = 6 m A
d B m
+ 5
+ 3
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
Electrical Specifications at Ta = 25C
Noise Figure vs. Frequency
1.5
2
2.5
3
0.1
0.5
1
1.5
2
2.5
3
3.5
4
8 mA
6 mA
GHz
dB
4-9
Low Noise MMICs
-40
-30
-20
-10
0
0.1
0.5
1
1.5
2
2.5
3
3.5
4
|S11| vs. Frequency
|S21| vs. Frequency
|S12| vs. Frequency
|S22| vs. Frequency
Pout & TOIP vs. Frequency
Typical S-Parameters Vds = 3.5V, Ids = 8mA
SLN-186 DC-4.0 GHz LNA MMIC Amplifier
Typical Performance at 25
C (Vds = 3.5V, Ids = 8mA)
F re q G H z
|S 11 |
S 11 A n g
|S 2 1 |
S 2 1 A n g
|S 1 2 |
S 1 2 A n g
|S 2 2 |
S 2 2 A n g
.1 0 0
0 .0 9 2
1 2 2
11 .6 9
-1 2
.0 8 0
-11
.0 4 4
3 5
.2 5 0
0 .0 6 8
-1 5 4
11 .9 9
-4
.0 5 3
5
.0 8 9
-2 2
.5 0 0
0 .0 6 7
-1 5 3
1 2 .3 2
-1 3
.0 4 2
1 6
.0 9 1
-4 6
1 .0 0
0 .1 2 5
-1 6 0
1 3 .0 3
-3 9
.0 4 0
2 9
.1 2 3
-11 2
1 .5 0
0 .2 1 5
1 5 2
1 4 .0 7
-7 2
.0 4 8
4 5
.2 4 5
1 6 9
2 .0 0
0 .3 0 9
9 0
1 5 .11
-1 3 8
.0 4 5
3 1
.3 9 4
8 6
2 .5 0
0 .4 2 3
3 6
1 5 .2 0
-1 7 3
.0 5 6
1 4
.4 2 1
1 2
3 .0 0
0 .5 1 3
8
1 3 .1 8
1 5 2
.0 5 9
1 4
.4 4 5
-2 6
3 .5 0
0 .5 0 9
-1 4
1 0 .4 7
1 3 8
.0 6 1
1 7
.4 4 4
-5 1
4 .0 0
0 .4 9 1
-2 0
8 .8 9
1 2 5
.0 7 5
2 0
.4 6 8
-7 1
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die)
-20
-15
-10
-5
0
0.1
0.5
1
1.5
2
2.5
3
3.5
4
-16
-12
-8
-4
0
4
8
12
0.1
0.5
1
1.5
2
2.5
3
3.5
4
Pout
TOIP
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
GHz
dBm
GHz
dB
GHz
dB
GHz
dB
10
15
20
25
30
0.1
0.5
1
1.5
2
2.5
3
3.5
4
8mA
6mA
Low Noise MMICs
-40
-30
-20
-10
0
0.1
0.5
1
1.5
2
2.5
3
3.5
4
GHz
dB
4-10
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com
SLN-186 DC-4.0 GHz LNA MMIC Amplifier
Absolute Maximum Ratings
Part Number
Devices Per Reel
Reel Size
SLN-186-TR1
1000
7"
SLN-186-TR2
3000
13"
SLN-186-TR3
5000
13"
Part Number Ordering Information
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Typical Biasing Configuration
P a r a m e te r
A b s o lu te
M a x im u m
D e vic e C ur re nt
5 0 m A
P o w e r D issipa tion
4 4 0m W
R F In p ut P o w er
1 0 0m W
Ju n ction Te m p e ra ture
+2 0 0 C
O p e ra tin g Te m p e ra tu re
-4 5 C to +8 5 C
S to ra g e Te m pe ra tu re
-6 5 C to +1 5 0 C
Pin
Function
1
RF Input
2
Ground
3
RF Output
and Bias
4
Ground
Device Pinout
Device Outline
* Needs active biasing for constant current source
Recommended Bias Resistor Values
Supply Voltage(Vs)
3.3V
5V
7.5V
9V
12V
15V
20V
Rbias (Ohms)
@ 8mA
*
188
500
688
1063
1438
2063
Rbias (Ohms)
@ 6mA
*
300
717
967
1467
1967
2800
4-11
Low Noise MMICs
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