The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
1
Product Description
EDS-101105 Rev. D
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
NGA-586
DC-5.5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
High Gain : 18.6 dB at 1950 MHz
Cascadable 50 Ohm
Patented InGaP Technology
Operates From Single Supply
Low Thermal Resistance Package
Stanford Microdevices NGA-586 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 5.5 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 80mA , the NGA-586 typically provides +39.6 dBm output
IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed
power using a single positive voltage supply. Only 2 DC-
blocking capacitors, a bias resistor and an optional RF choke
are required for operation.
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/
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1
2
1
Test Conditions:
V
S
= 8v
I
D
= 80mA Typ.
IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
BIAS
= 39 Ohms
T
L
= 25C
Z
S
= Z
L
= 50 Ohms
Applications
Cellular, PCS, CDPD
Wireless Data, SONET
Satellite
Gain & Return Loss vs. Freq. @T
L
=+25C
8
12
16
20
24
0
1
2
3
4
5
6
Frequency (GHz)
Gai
n
(dB
)
-40
-30
-20
-10
0
R
e
t
u
rn Los
s
(dB
)
GAIN
IRL
ORL
2
EDS-101105 Rev. D
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
Preliminary
NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
OIP
3
vs. Frequency
V
D
= 4.9 V, I
D
= 80 mA
P
1dB
vs. Frequency
V
D
= 4.9 v, I
D
= 80 mA
Absolute Maximum Ratings
Bias Conditions should also satisfy the following
expression: I
D
V
D
(max) < (T
J
- T
L
)/R
th
Noise Figure vs. Frequency
V
D
= 4.9 V, I
D
= 80 mA
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6
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3
Frequency (MHz)
Test Conditions:
V
S
= 8 V
I
D
= 80 mA Typ.
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
BIAS
= 39 Ohms
T
L
= 25C
Z
S
= Z
L
= 50 Ohms
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
N
o
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se Fi
gure (
d
B
)
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20
25
30
35
40
45
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
OI
P
3
(dB
m
)
+25C
-40C
+85C
T
L
T
L
=+25C
10
12
14
16
18
20
22
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
P
1dB
(dB
m
)
+25C
-40C
+85C
T
L
3
EDS-101105 Rev. D
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
Preliminary
NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier
S
12
vs. Frequency
V
D
= 4.9 v, I
D
= 80 mA
S
22
vs. Frequency
V
D
= 4.9 v, I
D
= 80 mA
* Note: In the applications circuit on page 4, R
BIAS
compensates for voltage and current variation over temperature.
S
11
vs. Frequency
V
D
= 4.9 v, I
D
= 80 mA
S
21
vs. Frequency
V
D
= 4.9 v, I
D
= 80 mA
V
D
vs. Temperature for Constant I
D
= 80 mA
V
D
vs. I
D
over Temperature for fixed
V
S
= 8 v, R
BIAS
= 39 ohms *
5
10
15
20
25
0
1
2
3
4
5
6
Frequency (GHz)
S
21
(dB)
+25C
-40C
+85C
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
Frequency (GHz)
S
11
(d
B)
+25C
-40C
+85C
T
L
-35
-30
-25
-20
-15
-10
-5
0
1
2
3
4
5
6
Frequency (GHz)
S
22
(d
B)
+25C
-40C
+85C
-25
-23
-21
-19
-17
-15
0
1
2
3
4
5
6
Frequency (GHz)
S
12
(d
B)
+25C
-40C
+85C
T
L
T
L
T
L
65
70
75
80
85
90
95
4.6
4.7
4.8
4.9
5.0
5.1
V
D
(Volts)
I
D
(m
A
)
+85C
-40C
+25C
4.3
4.5
4.7
4.9
5.1
5.3
-40
-15
10
35
60
85
Temperature(C)
V
D
(Vo
l
t
s
)
4
EDS-101105 Rev. D
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
Preliminary
NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier
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5
1
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
NGA-586 Basic Application Circuit
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RF in
RF out
1 uF
C
B
C
B
C
D
V
S
R
BIAS
L
C
1
2
3
4
For package dimensions, refer to outline drawing at
www.stanfordmicro.com
1000
pF
NGA-586
Application Circuit Element Values
Part Number Ordering Information
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6
8
5
-
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N
"
7
0
0
0
1
The part will be marked with an N5 designator on the
top surface of the package.
Part Identification Marking
#
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Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
1 uF
R
BIAS
N5
1000 pF
C
B
C
B
C
D
L
C
V
S
1
2
3
4
N5
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