2005 SST Communications Corp.
S71279-00-000
1/05
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Preliminary Specifications
FEATURES:
High Gain:
Typically 30 dB gain across 2.4~2.5 GHz over
temperature 0C to +80C
High linear output power:
>26.5 dBm P1dB
Meets 802.11g OFDM ACPR requirement up to
23 dBm
Added EVM ~4% up to 20 dBm for
54 Mbps 802.11g signal
Meets 802.11b ACPR requirement up to 24 dBm
High power-added efficiency/Low operating
current for both 802.11g/b applications
~22% @ P
OUT
= 22 dBm for 802.11g
~26% @ P
OUT
= 23.5 dBm for 802.11b
Built-in Ultra-low I
REF
power-up/down control
I
REF
<4 mA
Low idle current
~60 mA I
CQ
High-speed power-up/down
Turn on/off time (10%~90%) <100 ns
Typical power-up/down delay with driver delay
included <200 ns
High temperature stability
~1 dB gain/power variation between 0C to +80C
~1 dB detector variation over 0C to +80C
Low shut-down current (< 0.1 A)
On-chip power detection
25 dB dynamic range on-chip power detection
Simple input/output matching
Packages available
16-contact VQFN (3mm x 3mm)
Non-Pb (lead-free) packages available
APPLICATIONS:
WLAN (IEEE 802.11g/b)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment
PRODUCT DESCRIPTION
The SST12LP14 is a high-performance power amplifier IC
based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP14 can be easily configured for high-power,
high-efficiency applications with superb power-added effi-
ciency while operating over the 2.4~2.5 GHz frequency
band. It typically provides 30 dB gain with 22% power-
added efficiency @ P
OUT
= 22 dBm for 802.11g and 27%
power-added efficiency @ P
OUT
= 24 dBm for 802.11b.
The SST12LP14 has excellent linearity, typically <4%
added EVM up to 20 dBm output power which is essential
for 54 Mbps 802.11g operation while meeting 802.11g
spectrum mask at 23 dBm. The SST12LP14 also has
wide-range (>25 dB), temperature-stable (~1 dB over
80C), single-ended/differential power detectors which
lower users' cost on power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/down control. Ultra-
low reference current (total I
REF
<4 mA) makes the
SST12LP14 controllable by an on/off switching signal
directly from the baseband chip. These features coupled
with low operating current make the SST12LP14 ideal for
the final stage power amplification in battery-powered
802.11g/b WLAN transmitter applications.
The SST12LP14 is offered in 16-contact VQFN package.
See Figure 1 for pin assignments and Table 1 for pin
descriptions.
2.4 GHz Power Amplifier
SST12LP14
SST12LP142.4 GHz Power Amplifier
Preliminary Specifications
2.4 GHz Power Amplifier
SST12LP14
2005 SST Communications Corp.
S71279-00-000
1/05
2
FUNCTIONAL BLOCKS
2
5
6
8
16
VCC
1
15
1
14
NC
NC
4
9
11
12
10
13
NC
VCCb
VREF
1
VREF
2
Det_r
ef
VCC2
RFOUT
RFOUT
Det
NC
3
RFIN
RFIN
NC
Bias Circuit
7
1279 B1.1
F
UNCTIONAL
B
LOCK
D
IAGRAM
Preliminary Specifications
2.4 GHz Power Amplifier
SST12LP14
3
2005 SST Communications Corp.
S71279-00-000
1/05
PIN ASSIGNMENTS
FIGURE 1: P
IN
A
SSIGNMENTS
FOR
16-
CONTACT
VQFN
PIN DESCRIPTIONS
TABLE 1: P
IN
D
ESCRIPTION
Symbol
Pin No.
Pin Name
Type
1
1. I=Input, O=Output
Function
GND
0
Ground
The center pad should be connected to RF ground with
several low inductance, low resistance vias.
NC
1
No Connection
Unconnected pins.
RFIN
2
I
RF input, DC decoupled
RFIN
3
I
RF input, DC decoupled
NC
4
No Connection
Unconnected pins.
VCCb
5
Power Supply
PWR
Supply voltage for bias circuit
VREF1
6
PWR
1st stage idle current control
VREF2
7
PWR
2nd stage idle current control
Det_ref
8
O
On-chip power detector reference
Det
9
O
On-chip power detector
RFOUT
10
O
RF output
RFOUT
11
O
RF output
VCC2
12
Power Supply
PWR
Power supply, 2nd stage
NC
13
No Connection
Unconnected pins.
NC
14
No Connection
Unconnected pins.
NC
15
No Connection
Unconnected pins.
VCC1
16
Power Supply
PWR
Power supply, 1st stage
T1.0 1279
5
6
8
16
V
C
C
1
15
14
N
C
N
C
9
11
12
10
13
N
C
V
C
C
b
V
R
E
F
1
V
R
E
F
2
D
e
t
_
r
e
f
VCC2
RFOUT
RFOUT
Det
2
1
4
3
NC
RFIN
RFIN
NC
7
1279 16-vqfn P1.1
Top View
(contacts facing down)
RF and DC GND
0
Preliminary Specifications
2.4 GHz Power Amplifier
SST12LP14
2005 SST Communications Corp.
S71279-00-000
1/05
4
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec-
ifications. Refer to Figures 2 through 12 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum
Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Supply Voltage at pins 5, 12, and 16 (V
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V
Reference voltage to pin 6 (V
REF1
) and pin 7 (V
REF2
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
DC supply current (I
CC
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Operating Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C
Storage Temperature (T
STG
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C
Maximum Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . . . . . . . . . . "with-Pb" units
1
: 240C for 3 seconds
1. Certain "with-Pb" package types are capable of 260C for 3 seconds; please consult the factory for the latest information.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "non-Pb" units: 260C for 3 seconds
O
PERATING
R
ANGE
Range
Ambient Temp
V
CC
Industrial
-40C to +85C
3.3V
TABLE
2: DC E
LECTRICAL
C
HARACTERISTICS
Symbol
Parameter
Min.
Typ
Max.
Unit
Test Conditions
V
CC
Supply Voltage at pins 5, 12, 16
3.0
3.3
4.2
V
I
CC
Supply Current
for 802.11g, 24 dBm
290
mA
for 802.11g, 25 dBm
340
mA
I
CQ
Idle current for 802.11g to meet EVM @ 20.5 dBm
55
mA
I
OFF
Shut down current
0.1
A
V
REG1
Reference Voltage for 1st Stage, with 120
resistor
2.7
2.9
3.1
V
V
REG2
Reference Voltage for 2nd Stage, with 360
resistor
2.7
2.9
3.1
V
V
REG1
Reference Voltage for 1st Stage, with 220
resistor
2.9
3.1
3.3
V
V
REG2
Reference Voltage for 2nd Stage, with 590
resistor
2.9
3.1
3.3
V
T2.0 1279
Preliminary Specifications
2.4 GHz Power Amplifier
SST12LP14
5
2005 SST Communications Corp.
S71279-00-000
1/05
TABLE
3: AC E
LECTRICAL
C
HARACTERISTICS
FOR
C
ONFIGURATION
Symbol
Parameter
Min.
Typ
Max.
Unit
F
L-U
Frequency range
2400
2485
MHz
P
OUT
Output power
@ PIN = -7 dBm 11b signals
23
dBm
@ PIN = -10 dBm 11g signals
20
dBm
G
Small signal gain
30
31
33
dB
G
VAR1
Gain variation over band (2400~2485 MHz)
0.5
dB
G
VAR2
Gain ripple over channel (20 MHz)
0.2
dB
ACPR
Meet 11b spectrum mask
23
dBm
Meet 11g OFDM 54 MBPS spectrum mask
22
dBm
Added EVM
@ 20 dBm output with 11g OFDM 54 MBPS signal
3
%
2f, 3f, 4f, 5f
Harmonics at 22 dBm, without trapping capacitors
-40
dBc
T3.0 1279
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