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Электронный компонент: DB3

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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
FEATURES
VBO: 26 ~ 36V version
Low breakover current
High temperature soldering guaranteed:
250
o
C/10S/9.5mm lead length
at 5 lbs tension
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Glass,hermetically sealed
Mounting position: Any
MAXIMUM RATINGS AND CHARACTERISTICS
(Rating at 25
o
C ambient temperature unless otherwise specified)
Min. Typ. Max.
Breakover Voltage *
C=22nF **
26
32
36
V
Breakover Voltage Symmetry
C=22nF **
-3
3
V
Dynamic Breakover Voltage *
(Note 1)
5
V
Output Voltage *
5
V
Breakover Current *
C=22nF **
100
A
Rise Time *
1.5
S
Leakage Current *
V
R
=0.5V
BO
10
A
Power Dissipation on Printed Circuit
Ta=65
o
C
150
mW
Repetitive Peak on-state Current
tp=20
S
f=100Hz
2
A
Thermal
Junction to Ambient
400
Resistances
Junction to Lead
150
Operating Junction and Storage
Temperature Range
* : Electrical characteristic applicable in forward and reverse directions.
** : Connected in parallel with the devices.
Note:
1. I
F
from I
BO
to 10mA.
http://www.sse-diode.com
DB3
BIDIRECTIONAL
TRIGGER DIODE
BREAKOVER VOLTAGE: 32V
POWER: 150mW
RATINGS
TEST
CONDITION
SYMBOL
VALUE
UNITS
V
BO
|+ V
BO
|-|-V
BO
|
|
V |
V
O
I
BO
tr
I
B
Pd
I
TRM
R
(ja)
o
C/W
R
(jl)
T
J
,T
STG
-40
125
o
C
TECHNICAL
SPECIFICATION
DO - 35
Dimensions in inches and (millimeters)
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56)
.120 (3.0)
.200 (5.1)
1.0 (25.4)
MIN.
DIA.
.060 (1.5)
.090 (2.3) DIA.