Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER'S DATA SHEET
TO-257
SFX9130J
10 AMP /100 Volts
300 m
P-Channel MOSFET
Features:
Rugged construction with polysilicon gate
Low ON-resistance and high
transconductance
Excellent high temperature stability
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
replacement for IRF9130 types
TX, TXV, S-Level screening available
Maximum Ratings
Symbol
Value
Units
Drain - Source Voltage
V
DSS
-100
V
Gate Source Voltage
V
GS
20
V
Max. Continuous Drain Current (package limited)
@ T
C
= 25C
@ T
C
= 100C
I
D1
I
D2
10
7
A
Max. Avalanche current
@ L= 5.0 mH
I
AR
9.8
A
Repetitive Avalanche Energy
@ L= 5.0 mH
E
AR
5.2
mJ
Single Pulse Avalanche Energy
@ L= 5.0 mH
E
AS
320
mJ
Total Power Dissipation
@ T
C
= 25C
P
D
75
W
Operating & Storage Temperature
T
OP
& T
STG
-55 to +150
C
Maximum Thermal Resistance
(Junction to Case)
R
0JC
1.65
C/W
PACKAGE OUTLINE:
TO-257 (J)
PINOUT:
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
SUFFIX JDB SUFFIX JUB
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0013A DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFX9130J
Electrical Characteristics
4/
Symbol
Min
Typ Max Units
Drain to Source Breakdown Voltage
V
GS
= 0V, I
D
=0.25 mA
BV
DSS
-100
V
Drain to Source Breakdown Voltage
Temperature Coefficient
V
GS
= 0V, I
D
=0.25 mA dBV
DSS
/dT
-0.1
V/
o
C
Drain to Source On State Resistance
V
GS
= 10V, I
D
= 5A, Tj= 25
o
C
V
GS
= 10V, I
D
= 10A, Tj= 25
o
C
R
DS(on)
240
300
300
m
Gate Threshold Voltage
V
DS
= 5 V, I
D
= 250
A
V
GS(th)
-2.0
-4.0
V
Gate to Source Leakage
V
GS
= 20V
I
GSS
5
100
nA
Zero Gate Voltage Drain Current
V
DS
= -100V, V
GS
= 0V, T
j
= 25
o
C
V
DS
= -80V, V
GS
= 0V, T
j
= 125
o
C
I
DSS
0.01
1
10
100
A
A
Forward Transconductance
V
DS
= 40V, I
D
= 5A, T
j
= 25
o
C
g
fs
4
5.2
Mho
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
V
GS
= 10V
V
DS
= 80V
I
D
= 10A
Q
g
Q
gs
Q
gd
30
5.5
1.5
38
nC
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
V
GS
= 10V
V
DS
= 50V
I
D
= 10A
R
G
= 12
t
d(on)
t
r
t
d(off)
t
f
15
25
45
25
35
55
100
60
nsec
Diode Forward Voltage
I
F
= 10A, V
GS
= 0V
V
SD
2.00
4.00
V
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
F
= 10A, di/dt = 100A/usec
t
rr
Q
rr
120
0.55
350
2.5
nsec
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
C
iss
C
oss
C
rss
800
160
60
1035
240
90
pF
NOTES:
* Pulse Test: Pulse Width = 300sec, Duty Cycle = 2%.
4/ Unless Otherwise Specified, All Electrical Characteristics @25
o
C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0013A DOC
PDF 
ZIP