--1--
E94706A5X-TE
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25C)
Supply voltage
V
CC
10
V
Operating temperature
Topr
40 to +80
C
Storage temperature
Tstg
50 to +100
C
Recommended Operating Condition
5
V
Description
The DM-111A is a highly sensitive magnetic
resistance element, composed of an evaporated
ferromagnetic alloy on a silicon substrate. The
element can be used for detection of rotational
speed and for detection of angle of rotation and as a
detection of position.
Features
Low power consumption
38W (Typ.) at V
CC
=5V
Low magnetic field and high sensitivity
75mVp-p (Typ.) at V
CC
=5V
and H=4000A/m
High reliability
Ensured through silicon nitride protective filming
Magneto-Resistance Element
M-102 (Plastic)
Electrical Characteristics
(Ta=25C)
DM-111A
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Total resistance
Midpoint potential
Output voltage
R
T
V
C
V
O
H=4000A/m,
=45
V
CC
=5V , H=4000A/m
Revoiving magnetic field
V
CC
=5V , H=4000A/m
Revoiving magnetic field
500
2.47
30
650
2.50
75
800
2.53
k
V
mVp-p
For the availability of this product, please contact the sales office.
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DM-111A
Equivalent Circuit
Introduction
1) Power supplying pin output pin
2) Sensitive direction vs. Midpoint potential
R
A
: Resistance reduces as the
magnetic field revolves.
R
B
: Resistance increases as the
magnetic field revolves.
R
A
R
B
1
2
3
R
A
R
B
1
2
3
max
min
H
R
A
R
B
1
2
3
1 2 3
111A
V
CC
c
d
b
a
e
a
b
c
d
e
Direction of Magnetic-
flux
Incidence
Sensitive
Non-sensitive
Direction of Magnetic-
flux
Incidence
Midpoint potential
Hs
V
CC
2
H
Useful Region
Changes occur to the output voltage at the saturation region
of V-H curve according to the direction of magnetic flux.
These changes provide for the operation.
With one rotation of magnetic flux, signals for 2 periods are
obtained.
--3--
DM-111A
3) 0 Biasing magnetic field
(Switching use)
4) 45 Biasing magnetic field
(Analog use)
H
V
V
Biasing
Magnet
Sensitive
Non-sensitive
Biasing Magnetic Field
Detected Magnetic Field
+
Output
GND
1
2
3
Biasing
Magnet
Sensitive
Non-sensitive
Biasing Magnetic Field
V
H
Detected Magnetic Field
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DM-111A
Applications
1. Detection of revolution
2. Position detecting
3. Angular detection of rotating wheel
4. Readind out of analog value
5. Position detecting of revolving element
Magnetic conductors
N
S
N
N
S
S
S
N
N
S
N
N
S
S N
S
N
N
S
N
Electric
current
Electric
current
N
--5--
DM-111A
Circuits
2), 3), 5)
1), 2), 3), 5)
Bridge Circuits
How to make a Biasing Magnetic Field
Stick a rubber of ferrite biasing magemt
Position an element between the poles of the permanent magnet.
Notes on Application
Excute the solder of the lead line within 10 seconds at a temperature below 260C
To fix the ELEMENTS: When glue is used, DO NOT apply mechanical stress to the elements.
Do not use this element in the dewy condition.
Vcc
r
1
r
2
1
2
3
Output
X
Moving
Direction
(X-derection)
Differential
Amplifier
S
N
Vcc
r
1
r
2
1
2
3
Differenntial
Amplifier
Moving
Direction
(X-derection)
Biasing Magnet
Output
X
Output
SONY
111A
(Biasing Magnet)
SONY
111A
By coupling 2 pieces back to back and sticking item
together in a bridge, the output voltage is doubled.
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DM-111A
Midpoint potential vs. Magnetic field Intensity
10000
20000
0
2.45
2.46
2.47
V
C
Midpoint potential (V)
H-Revoluing magnetic field intensity (Oe)
2.48
2.49
2.50
2.51
2.52
2.53
2.54
2.55
111A
V
CC
GND
111A
V
CC
GND
V
CC=
5V
Ta
=
25C
Midpoint potential vs. Magnetic-flux Incidence
0
2.45
2.46
2.47
V
C
Midpoint potential (V)
-Direction of magnetic-flux Incidence (deg)
2.48
2.49
2.50
2.51
2.52
2.53
2.54
2.55
1.V
CC=
5V
2. Output
3. GND
H
=
4000A/m
Ta
=
25C
111A
1 2 3
45
90
135
180
225
Output voltage vs. Magnetic fiels Intensity
10000
20000
0
20
V
O
Output voltage (mVp-p)
H-Revolving magnetic field intensity (Oe)
40
60
80
100
V
CC
=5V
Ta=25C
0
Total resistance, output voltage vs. Temperature
0
10
20
V
o
Output voltage (mVp-p)
Ta-Ambient temperature (C)
30
40
50
60
70
80
90
100
H=4000A/m
(Revolving magnetic fiels)
50 25
0
25
50
75 100 125 150
R
T
V
O
400
500
600
700
800
900
R
T
Total resistance (k
)
Example Representative Characteristics
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
0.24g
M-102
6.3
0.4
6.0
1.0
1.7
0.4
7.0 0.4
0.5 0.2
1.2
2.54
5.08
M-102
2.0 0.3
1.0
0.25 0.1
Package Outline Unit : mm
DM-111A
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