--1--
E95304B83-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 C)
Reverse voltage
V
R
30
V
Peak reverse voltage
V
RM
35
V
(R
L
10 k
)
Operating temperature
Topr
20 to +75
C
Storage temperature
Tstg
65 to +150
C
Description
The 1T411 is a variable capacitance diode
designed for analog cellular phone and it has a
super miniature package.
Features
Super miniature package
Small series resistance 0.40
Max. (f=470 MHz)
Large capacitance ratio 6.5
Typ. (C
2
/C
25
)
Capacitance deviation in a matching group
3 % (max.)
Structure
Silicon epitaxial planar-type diode
Variable Capacitance Diode
M-235
1T411
Electrical Characteristics
(Ta=25 C)
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Capacitance deviation in a
matching group
Symbol
I
R
C
2
C
25
C
2
/C
25
rs
C
Conditions
V
R
=28 V
V
R
=2 V, f=1 MHz
V
R
=25 V, f=1 MHz
f=1 MHz
C
D
=14 pF, f=470 MHz
V
R
=2 to 25 V, f=1 MHz
Min.
Typ.
Max.
Unit
20
nA
26.37
29.50
33.05
pF
4.030
4.400
4.807
pF
6.5
0.35
0.40
3
%
--2--
1T411
Reverse current vs. Ambient temperature
Forward voltage vs. Ambient temperature
Diode capacitance vs. Reverse voltage
V
R
-Reverse voltage (V)
100
50
20
10
5
2
1
C
-
D
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
(
p
F
)
1
2
5
10
20
50
Ta=25C
V
R
=28V
1.000
0.100
0.010
0.001
I
R
-
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
n
A
)
Ta-Ambient temperature (C)
20
40
60
80
20
0
I
F
=1mA
Ta-Ambient temperature (C)
80
60
40
20
0
20
0.80
0.70
0.60
0.50
V
F
-
F
o
r
w
a
r
d
v
o
l
t
a
g
e
(
V
)
Reverse voltage vs. Ambient temperature
I
R
=10A
Ta-Ambient temperature (C)
80
60
40
20
0
20
40
35
30
25
V
R
-
R
e
v
e
r
s
e
v
o
l
t
a
g
e
(
V
)
--3--
1T411
1.03
1.02
1.01
1.00
0.99
0.98
C
(
T
a
)
/
C
(
2
5
C
)
-
D
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
Diode capacitance vs. Ambient temperature
V
R
=1V
V
R
=2V
V
R
=7V
V
R
=25V
V
R
=15V
Reverse current vs. Reverse voltage
Thermal coefficient of diode capacitance
T
h
e
r
m
a
l
c
o
e
f
f
i
c
i
e
n
t
o
f
d
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
(
p
p
m
/
C
)
V
R
-Reverse voltage (V)
Ta-Ambient temperature (C)
20
0
20
40
60
80
Ta=80C
1.000
0.100
0.010
0.001
I
R
-
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
n
A
)
Ta=60C
Ta=25C
V
R
-Reverse voltage (V)
50
20
10
5
2
1
1000
500
200
100
50
50
20
10
5
2
1
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
M-235
1.25
+ 0.2
0.1
0.3
+ 0.1
0.05
1
.
7
0
.
1
2
.
5
0
.
2
1
2
0.3
+ 0.1
0.05
0.9 0.1
0.2
0 0.05
0 to 10
0.11
+ 0.1
0.06
M-235
0.1g
NOTE: Dimension "
" does not include mold protrusion.
Package Outline Unit : mm
1T411
--4--
Marking
1
2
CATHODE MARK
11
B
Notes
1) B:Lot No.(Year and Month of manufacture)
Year;Last one digit
Month;A,B,C(for Oct. to Dec.)
1 to 9(for Jan.to Sept.)
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