--1--
E96144A98-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 C)
Reverse voltage
V
R
15
V
Operating temperature
Topr
35 to +85
C
Storage temperature
Tstg
65 to +150
C
Description
The 1T409 is a variable capacitance diode
designed for UHF-band VCO using a super-small-
miniature flat package (SSVC).
Features
Super-small-miniature flat package
Low series resistance:
0.4
Max. (f=470 MHz)
Large capacitance ratio: 2.5 Typ.
(C
2
/C
10
)
Small leakage current:
3 nA Max.
(V
R
=15 V)
Applications
UHF-band VCO
Local oscillator for cordless telephone
Local oscillator for cellular equipment
Structure
Silicon epitaxial planar type diode
Variable Capacitance Diode
M-290
1T409
Electrical Characteristics
(Ta=25 C)
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Symbol
I
R
C
2
C
10
C
2
/C
10
rs
Conditions
V
R
=15 V
V
R
=2 V, f=1 MHz
V
R
=10 V, f=1 MHz
V
R
=5V, f=470 MHz
Min.
14.26
5.46
2.2
Typ.
2.5
0.3
Max.
3
15.96
6.46
0.4
Unit
nA
pF
pF
--2--
1T409
1
2
5
10
20
50
1
2
5
10
20
50
100
Diode capacitance vs. Reverse voltage
V
R
-Reverse voltage (V)
C
-
D
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Ta=25C
1
10
Reverse current vs. Ambient temperature
20
0
20
40
60
80
Ta-Ambient temperature (C)
I
R
-
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
p
A
)
0.1
0.70
0.90
Forward voltage vs. Ambient temperature
20
0
20
40
60
80
Ta-Ambient temperature (C)
V
F
-
F
o
r
w
a
r
d
v
o
l
t
a
g
e
(
V
)
I
F
=1mA
0.80
0.60
25
35
Reverse voltage vs. Ambient temperature
20
0
20
40
60
80
Ta-Ambient temperature (C)
V
R
-
R
e
v
e
r
s
e
v
o
l
t
a
g
e
(
V
)
30
20
V
R
=15V
I
R
=10A
--3--
1T409
20
0
20
40
60
80
0.98
0.99
1.00
1.01
1.02
1.03
Diode capacitance vs. Ambient temperature
Ta-Ambient temperature (C)
C
(
T
a
)
/
C
(
2
5
C
)
-
D
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
1
100
Reverse current vs. Reverse voltage
1
3
10
30
V
R
-Reverse voltage (V)
I
R
-
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
p
A
)
10
0.1
V
R
=1V
V
R
=2V
V
R
=7V
V
R
=10V
1000
Temperature coefficient of diode capacitance
1
2
5
10
V
R
-Reverse voltage (V)
T
e
m
p
e
r
a
t
u
r
e
c
o
e
f
f
i
c
i
e
n
t
(
p
p
m
/
C
)
50
20
50
500
200
100
Ta=80C
Ta=60C
Ta=25C
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