--1--
E91539A82-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 C)
Reverse voltage
V
R
30
V
Maximum reverse voltage V
RM
35
V
(R
L
10 k
)
Operating temperature
Topr
20 to +75
C
Storage temperature
Tstg 65 to +150
C
Description
The 1T365 is a variable capacitance diode
contained in super miniature package, and used for
electronic-tuning of BS tuner.
Features
Super miniature package
Small capacitance
0.7 pF Typ. (V
R
=25 V)
Low leakage current
10 nA Max. (V
R
=28 V)
Small serial resistance 1.1
Typ.
(V
R
=1 V, f=470 MHz)
Structure
Silicon epitaxial planar type diode
Silicon Variable Capacitance Diode
M-235
1T365
Electrical Characteristics
(Ta=25 C)
Item
Reverse current
Diode capacitance
Capacitance ratio
Serial resistance
Capacitance deviation in a
matching group
Symbol
I
R
C
2
C
25
C
2
/C
25
rs
C
Conditions
V
R
=28 V
V
R
=2 V, f=1 MHz
V
R
=25 V, f=1 MHz
V
R
=1 V, f=470 MHz
V
R
=2 to 25 V, f=1 MHz
Min.
Typ.
Max.
Unit
10
nA
3.31
4.55
pF
0.61
0.70
0.77
pF
5.0
5.7
1.1
1.8
5.0
%
--2--
1T365
Diode capacitance vs. Reverse voltage
10
1
0.1
C
-
D
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
R
-Reverse voltage (V)
Ta=25
C
f=1MHz
1
10
100
Reverse voltage vs. Operating ambient temperature
40
45
35
30
20
V
R
-
R
e
v
e
r
s
e
v
o
l
t
a
g
e
(
V
)
Ta-Operating ambient temperature (
C)
I
R
=10
A
0
20
40
60
80
100
Reverse current vs. Operating ambient temperature
100
1.0
0.1
10
0.01
I
R
-
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
p
A
)
Ta-Operating ambient temperature (
C)
V
R
=28V
20
0
20
40
60
80
Reverse current vs. Reverse voltage
10
0.1
1.0
0.01
I
R
-
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
p
A
)
V
R
-Reverse voltage (V)
Ta=60
C
Ta=25
C
1
10
100
Example of Representative Characteristics
--3--
1T365
Serial resistance vs. Reverse voltage
1.4
1.6
1.2
1.0
0.8
0.6
0.4
0.2
0
V
R
-Reverse voltage (V)
1
2
3
5
10
20
30
f=470MHz
Ta=25
C
V
R
=1V
Ta=25
C
r
s
-
S
e
r
i
a
l
r
e
s
i
s
t
a
n
c
e
(
)
Temperature coefficient of diode capacitance
1000
100
10
V
R
-Reverse voltage (V)
1
10
100
T
e
m
p
e
r
a
t
u
r
e
c
o
e
f
f
i
c
i
e
n
t
(
p
p
m
/
C
)
f=1MHz
Serial resistance vs. Frequency
1.6
1.2
1.3
1.4
1.5
0.8
0.9
1.0
1.1
f-Frequency (MHz)
100
200
500
1000
r
s
-
S
e
r
i
a
l
r
e
s
i
s
t
a
n
c
e
(
)
Diode capacitance vs. Operating ambient temperature
1.02
1.03
1.01
1.00
0.99
0.98
Ta-Operating ambient temperature (
C)
20
0
20
40
60
80
f=1MHz
D
i
o
d
e
c
a
p
a
c
i
t
a
n
c
e
C
(
T
a
)
C
(
2
5
C
)
V
R
=2V
V
R
=10V
V
R
=25V
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
M-235
1.25
+ 0.2
0.1
0.3
+ 0.1
0.05
1
.
7
0
.
1
2
.
5
0
.
2
1
2
0.3
+ 0.1
0.05
0.9 0.1
0.2
0 0.05
0 to 10
0.11
+ 0.1
0.06
M-235
0.1g
NOTE: Dimension "
" does not include mold protrusion.
Package Outline Unit : mm
1T365
--4--
Marking
1
2
CATHODE MARK
65
B
Notes
1) B:Lot No.(Year and Month of manufacture)
Year;Last one digit
Month;A,B,C(for Oct. to Dec.)
1 to 9(for Jan.to Sept.)
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