2/13/97
SDD66
SDD66
SDD66
SDD66
SDD66
40mm RECTIFIER DIODE
40mm RECTIFIER DIODE
40mm RECTIFIER DIODE
40mm RECTIFIER DIODE
40mm RECTIFIER DIODE
7000V / 520A
7000V / 520A
7000V / 520A
7000V / 520A
7000V / 520A
100
1000
10000
0
1
2
3
4
5
6
7
8
9
10
11
12
FORWARD CHARACTERISTIC
Process Maximum
Forward Current, If (amperes)
Forward Voltage. Vf (volts)
Forward Voltage. Vf (volts)
96h:t66 2/13/97
half sine pulse
8.3 ms
Initial Tj = 150 degC
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
0.01
0.1
1
10
THERMAL IMPEDANCE vs> POWER ON-TIME
Zthj-C degC/W
Power On-time in Seconds
Power On-time in Seconds
.001
.01
.02
.03
.04
Rthj-c (dc) = .037degC/W
waveform adders
add along curve
.0044 for 120deg sq.
.0032 for 180deg sine
96h:
175 Great Valley Pkwy. Malvern, PA 19355
USA
CLAMPING FORCE REQUIRED
3500 -4200 lbs.15.6 - 18.7kN
The SDD66 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured
by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with
moderate recovery current and low forward voltage.
SDD66 is designed specifically for transportation , industrial and utility 50/60 Hz rectifiers having very
high current surge and I
2
t requirements.
SELECTION TABLE
Model No.
Repetitive Peak Reverse Voltage
V
R R M
@ T
J
=
V
R R M
@ T
J
0 - 150
o
C
= -40
o
C
SDD66MT
7000 V
6500 V
SDD66MR
6800
6300
SDD66MM
6600
6100
SDD66MH
6400
6000
SDD66MD
6200
5800
SDD66KT
6000
5600
B
B
A
D
20 5
J
CL
CL
A
A
A
A
A
= 2.30 in (58.0 mm)
= 2.30 in (58.0 mm)
= 2.30 in (58.0 mm)
= 2.30 in (58.0 mm)
= 2.30 in (58.0 mm)
B
B
B
B
B
= 1.35 in (34.3 mm)
= 1.35 in (34.3 mm)
= 1.35 in (34.3 mm)
= 1.35 in (34.3 mm)
= 1.35 in (34.3 mm)
D= 1.04 in (26.4 mm)
D= 1.04 in (26.4 mm)
D= 1.04 in (26.4 mm)
D= 1.04 in (26.4 mm)
D= 1.04 in (26.4 mm)
SDD66
LIMITING CHARACTERISTICS AND RATINGS
LIMITING CHARACTERISTICS AND RATINGS
LIMITING CHARACTERISTICS AND RATINGS
LIMITING CHARACTERISTICS AND RATINGS
LIMITING CHARACTERISTICS AND RATINGS
TEST
MAX.
PARAMETER
SYMBOL
CONDITIONS VALUES
UNITS
Average
I
AV
half sine
520
A
current
T
C
= 10
o
C
Repetitive
V
RRM
T
J
= -40
see
V
peak reverse
to +150
o
C
page 1
voltage
50/60 Hz
Repetitve
I
RRM
T
J
=150
o
C
65
ma
peak reverse
25
o
C
10
current
Forward
V
FM
I
F
=1kA, 150
o
C
2.20
V
voltage
Peak recovery
I
RM
T
J
= 150
o
C
250
A
current
@ 10A/us
Non-rep peak
I
FSM
T
J
=160
o
surge current
t
p
=8.3ms
7500
A
t
p
=10ms
7100
V
R
=0
page 2 2/13/97
AVERAGE POWER DISSIPATION
AVERAGE POWER DISSIPATION
AVERAGE POWER DISSIPATION
AVERAGE POWER DISSIPATION
AVERAGE POWER DISSIPATION
Tj = 150 degC
I
AV
half
120
o
(A)
sine
sq.
50
47
50
100
115
123
150
199
217
200
300
331
250
418
464
300
552
618
350
703
792
400
870
985
450
1053
1198
500
1253
1432
0
250
500
750
1000
1250
1500
0
50
100
150
200
250
300
350
400
450
500
POWER DISSIPATION
Full Cycle Average 50/60 Hz
Average Power. Pavg (W)
Average Current, Iavg (A)
Average Current, Iavg (A)
96h:
120 deg
half
sine
0.1
1
10
0.1
1
10
12
7.5 7.1
0.108
0.233
0.252
1
10
NON-REPETITIVE SURGE CURRENT AND I2t
CAPABILITY FOR FUSE COORDINATION
Itsm (kA)
Half Sine Base Width (milliseconds)
I2t (MA2t)
Half Sine Base Width (milliseconds)
96h
10
100
0.1
1
10
MAXIMUM PEAK RECOVERY CURRENT
Peak Recovery Current (A)
Circuit Commutating di/dt,(A/us)
Circuit Commutating di/dt,(A/us)
SDD66
200
300
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