SPEC2:
7/31/96
100
1000
10000
0
1
2
3
4
5
6
7
8
On-State Current. It, (A)
On-State Voltage, Vt (V)
On-State Voltage, Vt (V)
process maximum
Tj = 125 C
30000
THERMAL IMPEDANCE
ON-STATE CHARACTERISTIC
0.1
1
10
100
1000
10000
THERMAL IMPEDANCE vs. ON-TIME
Zthj-c (deg C/W)
On-Time (milliseconds)
On-Time (milliseconds)
Rthj-case(dc) =
.012 degC/watt
.01
.001
.0001
.00001
.02
MODEL
V
DRM
/ V
RRM
@
0 to +125
o
C
-40
o
C
volts
C771LS
2800
2700
C771LM
2700
2600
C771LE
2600
2500
C771LD
2500
2400
C771LC
2400
2300
C771LB
2300
2200
C771LA
2200
2100
C771L
2100
2000
Type C771 reverse blocking thyristor is suitable for inverter applications.The silicon junction is
manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate structure.
It is supplied in an industry accepted disc-type package, ready to mount using commercially available
heat dissipators and mechanical clamping hardware.
Gate Drive Requirements:
20 - 30V / 10 ohms / 0.5us risetime
10 - 20 us minimum duration
External Clamping Force
7000 - 9000 lbs.
31.1 - 40.0 kN
INVERTER THYRISTO R
C771
77mm / 2800V / 100us
MECHANICAL OUTLINE
175 GREAT VALLEY PKWY. MALVERN, PA 19355
U S A
B
B
A
2 0 5
D
CL
CL
J
A
A
A
A
A
= 4.35 in (110.5 mm)
= 4.35 in (110.5 mm)
= 4.35 in (110.5 mm)
= 4.35 in (110.5 mm)
= 4.35 in (110.5 mm)
B
B
B
B
B
= 2.88 in (73.2 mm)
= 2.88 in (73.2 mm)
= 2.88 in (73.2 mm)
= 2.88 in (73.2 mm)
= 2.88 in (73.2 mm)
D= 1.45 in (36.8 mm)
D= 1.45 in (36.8 mm)
D= 1.45 in (36.8 mm)
D= 1.45 in (36.8 mm)
D= 1.45 in (36.8 mm)
LIMITING CHARACTERISTICS
52
30
2.03
4.5
Non-Repetitive Half-Cycle
Peak Surge Current & I2t
Itsm (kA)
Pulse Width - milliseconds
I2t (amp-sq-sec)
Pulse Width - milliseconds
10
20
30
1
3
5
10
40
50
60
2E6
3E6
4E6
5E6
1
10
100
ON-STATE ENERGY
Half Sine Pulses
Energy per Pulse (joules)
Peak Current (kA)
Peak Current (kA)
92I:
500
9000
7000
5000
2000
1000
750
250
(us)
3
4
5
6
200
pulse
width
7
1
10
100
ON-STATE ENERGY
Trapezoidal Wave
di/dt = 100 A/us
Energy per Pulse (joules)
Peak Current, It (kA)
Peak Current, It (kA)
92I:
1000
9000
7000
5000
2000
750
500
(us)
3
4
5
6
200
300
pulse
width
250
7
spec2:
7/31/96
C771 / 6RT215
TEST
PARAMETER
SYMBOL
CONDITIONS
LIMIT
UNITS
Repetitive peak off-
V
DRM
/V
RRM
T
J
= -40
up to
volts
state & reverse
to +125
o
C
2800V
voltage
Off-state & reverse
I
DM
/I
RM
T
j
= 125
o
C
150
ma
current
@ V
DRM
/V
RRM
code LE
@ 80% V
DRM
/V
RRM
codes LM & LS
Peak half cycle
I
TSM
60Hz (8.3ms
32.5
kA)
non-repetitive
50Hz (10ms)
30
surge current
On-state voltage
V
TM
I
T
= 2000A
1.74
volts
t
P
= 8.3ms
T
J
= 125
o
C
Critical rate of
di/dt
rep
V
D
= 60%V
DRM
300
A/us
rise of on-state
60Hz Tj=125
o
C
current
see gate drive
Critical rate of
dv/dt
V
DCRIT
= 80%V
DRM
500
v/us
rise of off-state
T
j
= 125
o
C
voltage
Peak recovery
I
RM
T
J
= 125
o
C
current
@ 10A/us
130
A
@ 50A/us
450
@ 100 A/us
750
Circuit commutated
t
Q
400V/us to 80% V
DRM
turn-off time
Vr =
> 50
V
100
us
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