PG:5.023 page 1 4/9/93
A641
A641
A641
A641
A641
40mm RECTIFIER DIODE
40mm RECTIFIER DIODE
40mm RECTIFIER DIODE
40mm RECTIFIER DIODE
40mm RECTIFIER DIODE
2600V / 1500A
2600V / 1500A
2600V / 1500A
2600V / 1500A
2600V / 1500A
SELECTION TABLE
Model No.
Repetitive Peak Reverse Voltage
V
RRM
@ T
J
=
V
RRM
@T
J
0 - 185
o
C
= -40
o
C
A641LM
2600 V
2400 V
A641LE
2500
2300
A641LD
2400
2200
A641LC
2300
2100
A641LB
2200
2000
A641LA
2100
1900
A641L
2000
1800
A641PT
1900
1700
A641PN
1800
1600
100
1000
10000
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
FORWARD CHARACTERISTIC
Process Maximum @ Tj=160 C
Forward Voltage, Vf (V)
Forward Voltage, Vf (V)
93C
20000
The A641 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the
proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate
recovery current and low forward voltage.
A641 is designed specifically for transportation , industrial and utility 50/60 Hz rectifiers having very high
current surge and I
2
t requirements.
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
MECHANICAL OUTLINE
0.01
0.1
1
10
THERMAL IMPEDANCE vs> POWER ON-TIME
Zthj-C degC/W
Power On-time in Seconds
Power On-time in Seconds
.001
.01
.02
.03
.04
Rthj-c (dc) = .037degC/W
waveform adders
add along curve
.0044 for 120deg sq.
.0032 for 180deg sine
93c:
175 Great Valley Pkwy. Malvern, PA 19355
USA
CLAMPING FORCE REQUIRED
3500 -4200 lbs.15.6 - 18.7kN
B
B
A
D
20 5
J
CL
CL
A
A
A
A
A
= 2.30 in (58.0 mm)
= 2.30 in (58.0 mm)
= 2.30 in (58.0 mm)
= 2.30 in (58.0 mm)
= 2.30 in (58.0 mm)
B
B
B
B
B
=1.35 in (34.3 mm)
=1.35 in (34.3 mm)
=1.35 in (34.3 mm)
=1.35 in (34.3 mm)
=1.35 in (34.3 mm)
D=1.04 in (26.4 mm)
D=1.04 in (26.4 mm)
D=1.04 in (26.4 mm)
D=1.04 in (26.4 mm)
D=1.04 in (26.4 mm)
A641 / 6RT51
LIMITING CHARACTERISTICS AND RATINGS
LIMITING CHARACTERISTICS AND RATINGS
LIMITING CHARACTERISTICS AND RATINGS
LIMITING CHARACTERISTICS AND RATINGS
LIMITING CHARACTERISTICS AND RATINGS
TEST
MAX.
PARAMETER
SYMBOL
CONDITIONS VALUES
UNITS
Average
I
AV
half sine
1500
A
current
T
C
= 95
o
C
Repetitive
V
RRM
T
J
= -40
see
V
peak reverse
to +185
o
C
page 1
voltage
50/60 Hz
Repetitve
I
RRM
T
J
=185
o
C
70
ma
peak reverse
25
o
C
10
current
Forward
V
FM
I
F
=1kA, 25
o
C
1.095
V
voltage
160
o
C
0.99
Peak recovery
I
RM
T
J
= 125
o
C
160
A
current
@ 10A/us
Non-rep peak
I
FSM
T
J
=160
o
surge current
t
p
=8.3ms
17
kA
t
p
=10ms
15
V
R
=0
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
0
500
1000
1500
2000
2500
POWER DISSIPATION
Full Cycle Average
Average Power. Pavg (W)
Average Current, Iavg (A)
Average Current, Iavg (A)
120 deg
half
sine
MAXIMUM PEAK RECOVERY CURRENT
Irm(rec) , amperes
di
dt
di
dt
I
RM(REC)
R
(REC)
t
0
di/dt
di/dt
(REC)
(R)
10
200
300
10
50
1
3
5
10
20
Circuit diR/dt, (A/us)
25 C
100
125 C
AVERAGE POWER DISSIPATION
AVERAGE POWER DISSIPATION
AVERAGE POWER DISSIPATION
AVERAGE POWER DISSIPATION
AVERAGE POWER DISSIPATION
Tj = 160 degC
I
AV
half
120
o
(A)
sine
sq.
250
220
230
500
517
550
750
882
950
1000
1314
1435
1250
1817
2004
1500
2360
2661
1750
3035
3407
2000
3753
4242
PG:5.023 page 2 4/9/93
NON-REPETITIVE SURGE CURRENT AND I2t
CAPABILITY FOR FUSE COORDINATION
1
3
5
10
Half-Sine Base Width (ms)
I
TSM
10
30
20
(kA)
1.0
.7
2.0
I
2
t
(MA t)
2
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