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Электронный компонент: Q68000-A8887

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GaAs MMIC
CGY 59
_________________________________________________________________________________________
_______________
Siemens Aktiengesellschaft
pg. 1/8
12.01.96
HL EH PD 21
P r e l i m i n a r y d a t a
* Low noise preamplifier for mobile communication
(PCN, DECT, GSM) in 2.7V to 6V systems
* Biased monolithic microwave IC (MMIC)
* Easily matchable to 50
* No bias coil needed
* Single positive supply voltage
* Low noise figure and high gain
NF=1.3dB, G=16.5dB @ 3V, 950MHz (typ.)
NF=1.7dB, G=12dB @ 3V, 1.85GHz (typ.)
* Low power consumption
* Frequency range 200 MHz ... 2.5 GHz
* Miniature package MW6 based on SOT23
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
6
5
4
3
2
1
Vd
RF-GND
DC-GND
RF-GND
RF-out
RF-in
Type
Marking
Ordering code
(taped)
Package 1)
CGY 59
Y5
Q68000-A8887
MW-6
Maximum ratings
Symbol
Unit
Drain voltage
VD
8
V
Channel temperature
TCh
150
C
Storage temperature range
Tstg
-55...+150
C
Total power dissipation
(TS < 132C)
2)
Ptot
80
mW
Thermal resistance
Channel-soldering point (GND)
RthChS
< 220
K/W
Junction-ambient
3)
RthJA
< 300
K/W
1)
Dimensions see chapter Package Outlines
2) Please care for sufficient heat dissipation on the pcb!
3) Package mounted on alumina 15mm x16.7 mm x0.7 mm
GaAs MMIC
CGY 59
_________________________________________________________________________________________
_______________
Siemens Aktiengesellschaft
pg. 2/8
12.01.96
HL EH PD 21
Electrical characteristics of CGY59 in GSM application circuit (see page 4)
TA = 25C
f=950MHz
RS = RL = 50
unless otherwise specified
Characteristics
Symbol
min
typ
max
Unit
Drain current
ID
-
6
-
mA
Power Gain
Ud = 3V
Ud = 5V
G
-
-
16.5
18
-
-
dB
Noise figure
Ud = 3V
Ud = 5V
F
-
-
1.3
1.3
-
-
dB
Input return loss
Ud = 3V
Ud = 5V
RLin
-
-
10
11
-
-
dB
Output return loss
Ud = 3V
Ud = 5V
RLout
-
-
11
9
-
-
dB
Third order input intercept point
two-tone intermodulation test
f1 = 950MHz, f2 = 951MHz
Pin = -20dBm (both carriers)
Ud = 3V
Ud = 5V
IP3
-
-
-4
-2
-
-
dBm
Input power at
1dB gain compression
Ud = 3V
Ud = 5V
P-1dB
-
-
-13
-11.5
-
-
dBm
GaAs MMIC
CGY 59
_________________________________________________________________________________________
_______________
Siemens Aktiengesellschaft
pg. 3/8
12.01.96
HL EH PD 21
Electrical characteristics of CGY59 in 1850 MHz application circuit (see page 4)
TA = 25C
f=1850MHz
RS = RL = 50
unless otherwise specified
Characteristics
Symbol
min
typ
max
Unit
Drain current
ID
-
6
-
mA
Power Gain
Ud = 3V
Ud = 5V
G
-
-
12
13
-
-
dB
Noise figure
Ud = 3V
Ud = 5V
F
-
-
1.70
1.65
-
-
dB
Input return loss
Ud = 3V
Ud = 5V
RLin
-
-
15
16
-
-
dB
Output return loss
Ud = 3V
Ud = 5V
RLout
-
-
15.5
13
-
-
dB
Third order input intercept point
two-tone intermodulation test
f1 = 1850MHz, f2 = 1851MHz
Pin = -20dBm (both carriers)
Ud = 3V
Ud = 5V
IP3
-
-
1
2
-
-
dBm
Input power at
1dB gain compression
Ud = 3V
Ud = 5V
P-1dB
-
-
-8
-6
-
-
dBm
GaAs MMIC
CGY 59
_________________________________________________________________________________________
_______________
Siemens Aktiengesellschaft
pg. 4/8
12.01.96
HL EH PD 21
950MHz Application (GSM)
CGY59
50 Ohm Microstripline
U
d
Input
50Ohm
Output
L = Inductor 22nH (Coilcraft 0805CS-220-XMBC)
50Ohm
33pF
1nF
33pF
6
L
100pF
2.5nH
100pF
3
1
2
4
5
1850MHz Application (PCN, DECT)
3
CGY59
L = Inductor 6.8nH (Coilcraft 0805CS-060-XMBC)
50 Ohm Microstripline
Input
50 Ohm
Output
50 Ohm
U
d
L
27pF
27pF
100pF
1nF
0.5pF
100pF
1
2
4
5
6
GaAs MMIC
CGY 59
_________________________________________________________________________________________
_______________
Siemens Aktiengesellschaft
pg. 5/8
12.01.96
HL EH PD 21
PCB - Layouts for Application Circuits
950MHz GSM - application board:
out
Ud
CGY59
in
1nF
100pF
33pF
33pF
100pF
22 nH
out
Ud
CGY59
in
1nF
100pF
33pF
33pF
100pF
22 nH
Actual size
( 20 x 20 mm )
1850MHz PCN -, DECT - application board:
Ud
CGY59
in
out
1nF
100pF
100pF
27pF
27pF
0.5pF
Ud
CG Y59
in
out
1nF
100pF
100pF
27pF
27pF
0.5pF
Actual size
( 20 x 20 mm )
PCB - data: Glass fiber teflon board (double sided) TACONIC TLX-9-0150-CH/CH
r
= 2.45
thickness = 0.4mm
GaAs MMIC
CGY 59
_________________________________________________________________________________________
_______________
Siemens Aktiengesellschaft
pg. 6/8
12.01.96
HL EH PD 21
Typical S- and Noise-Parameters
VD = 3 V
Zo = 50
f/GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.1
0.999
-4
4.30
-177
0.006
-75
0.261
-17
0.2
0.998
-6.6
4.32
-173
0.011
97.6
0.251
-10
0.3
0.997
-10
4.30
-167
0.010
94
0.247
-11
0.4
0.982
-14
4.26
161
0.016
76
0.238
-12
0.5
0.970
-18
4.24
156
0.019
78
0.232
-13
0.6
0.958
-21
4.16
151
0.020
78
0.226
-15
0.7
0.940
-24
4.13
146
0.023
73
0.221
-16
0.8
0.918
-27
4.02
141
0.026
79
0.218
-18
0.9
0.889
-32
3.91
136
0.031
79
0.209
-22
1.0
0.870
-34
3.82
132
0.033
76
0.195
-21
1.1
0.845
-37
3.76
128
0.036
75
0.189
-23
1.2
0.829
-39
3.63
123
0.039
73
0.186
-24
1.3
0.806
-42
3.58
119
0.041
72
0.177
-24
1.4
0.789
-45
3.47
115
0.043
71
0.173
-24
1.5
0.765
-47
3.39
111
0.046
71
0.166
-24
1.6
0.748
-50
3.29
107
0.046
72
0.159
-24
1.7
0.725
-52
3.21
104
0.051
71
0.154
-22
1.8
0.703
-54
3.14
100
0.051
71
0.147
-21
1.9
0.695
-56
3.08
97
0.055
69
0.140
-18
2.0
0.664
-58
2.98
93
0.056
71
0.135
-15
2.1
0.644
-59
2.86
90
0.059
70
0.129
-13
2.2
0.631
-61
2.83
86
0.062
69
0.123
-9.6
2.3
0.605
-63
2.79
83
0.063
69
0.114
-3.4
2.4
0.590
-65
2.70
80
0.064
69
0.109
2.7
2.5
0.570
-67
2.65
76
0.065
70
0.106
9.2
f
Fmin

opt
RN
MAG
ANG
GHz
dB
-
deg
0.8
1.15
0.77
19
59.7
1.0
1.19
0.74
22
56.4
1.2
1.24
0.72
27
54.0
1.4
1.31
0.71
32
51.8
1.6
1.39
0.70
36
49.6
1.8
1.49
0.68
39
47.3
2.0
1.62
0.66
43
43.9
S- and noise-parameters are also available on CD-ROM.
GaAs MMIC
CGY 59
_________________________________________________________________________________________
_______________
Siemens Aktiengesellschaft
pg. 7/8
12.01.96
HL EH PD 21
Typical S- and Noise-Parameters
VD = 5 V
Zo = 50
f/GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.1
0.998
-3.4
4.99
-177
0.007
-73
0.366
-15
0.2
0.997
-6.8
4.97
-173
0.008
30
0.331
-8.8
0.3
0.995
-10
4.99
-167
0.012
96
0.328
-9.2
0.4
0.976
-14
4.98
161
0.012
82
0.316
-11
0.5
0.963
-17
4.91
156
0.014
89
0.318
-12
0.6
0.957
-21
4.81
151
0.020
77
0.306
-14
0.7
0.942
-24
4.76
146
0.022
83
0.302
-16
0.8
0.920
-27
4.63
141
0.027
79
0.297
-17
0.9
0.887
-31
4.50
136
0.031
79
0.289
-21
1.0
0.871
-33
4.40
132
0.033
75
0.276
-21
1.1
0.846
-36
4.31
128
0.035
75
0.269
-22
1.2
0.826
-39
4.16
123
0.037
75
0.263
-22
1.3
0.807
-41
4.12
119
0.039
70
0.256
-24
1.4
0.788
-44
4.01
116
0.042
73
0.246
-24
1.5
0.762
-46
3.91
112
0.043
72
0.240
-24
1.6
0.744
-49
3.77
108
0.047
71
0.234
-25
1.7
0.723
-51
3.69
105
0.048
71
0.229
-24
1.8
0.703
-53
3.60
101
0.051
70
0.221
-23
1.9
0.687
-55
3.50
98
0.052
71
0.215
-22
2.0
0.665
-57
3.42
94
0.054
72
0.208
-21
2.1
0.647
-58
3.28
91
0.057
72
0.203
-20
2.2
0.636
-60
3.25
88
0.058
70
0.193
-59
2.3
0.611
-62
3.20
84
0.060
69
0.184
-17
2.4
0.595
-63
3.14
82
0.062
70
0.176
-14
2.5
0.573
-66
3.06
78
0.063
71
0.172
-11
f
Fmin

opt
RN
MAG
ANG
GHz
dB
-
deg
0.8
1.13
0.76
18
58.5
1.0
1.16
0.74
21
56.3
1.2
1.21
0.73
27
52.7
1.4
1.26
0.72
30
49.1
1.6
1.33
0.70
34
48.5
1.8
1.42
0.68
38
45.2
2.0
1.55
0.66
42
43.4
S- and noise-parameters are also available on CD-ROM.
GaAs MMIC
CGY 59
_________________________________________________________________________________________
_______________
Siemens Aktiengesellschaft
pg. 8/8
12.01.96
HL EH PD 21
Application Circuit for measuring S-parameters
f = 200MHz to 2.5GHz
CGY59
Reference
plane
Reference
plane
Input
Output
1)
1)
1) Caution! DC - decoupling capacitors are not integrated in device
is an approved CECC manufacturer.