GaAs MMIC
CGY 62
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 1/5
15.01.96
HL EH PD 21
D a t a s h e e t
* Two-stage microwave broadband amplifier IC
* 50
input / output
* Operating voltage range: 2.7 to 5 V
* High gain and output power
(typ.: G=20 dB, P
-1dB
=17,5 dBm @ 4.5V, 1GHz )
* Frequency range 200 MHz ... 2.5 GHz
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
6
5
4
3
2
1
OUT
GND
Interstage
IN
GND
GND
Type
Marking
Ordering code
(taped)
Package 1)
CGY 62
Y6s
Q68000-A8787
MW-6
Maximum ratings
Symbol
Unit
Drain voltage
VD
6
V
Channel temperature
TCh
150
C
Storage temperature range
Tstg
-55...+150
C
Total power dissipation
(TS < 70C)
2)
Ptot
800
mW
Thermal resistance
Channel-soldering point (GND)
RthChS
< 100
K/W
Junction-ambient
3)
RthJA
< 180
K/W
1)
Dimensions see chapter Package Outlines
2) Please care for sufficient heat dissipation on the pcb!
3) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm
GaAs MMIC
CGY 62
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 2/5
15.01.96
HL EH PD 21
Electrical characteristics
TA = 25C
VD = 4,5 V
RS = RL = 50
unless otherwise specified
Characteristics
Symbol
min
typ
max
Unit
Drain current
ID
-
130
175
mA
Power Gain
f = 200 MHz to 1800 MHz
f = 2500 MHz
G
18
-
19
15
-
-
dB
Gain flatness
f = 200 MHz to 1800 MHz
G
-
2
3.5
dB
Noise figure
f = 200 MHz to 1800 MHz
F
-
3.5
4.0
dB
Input return loss
f = 200 MHz to 500 MHz
f = 500 MHz to 2500 MHz
RLin
-
10
8
15
-
-
dB
Output return loss
f = 200 MHz to 2500 MHz
RLout
10
13
-
dB
Third order intercept point
two-tone intermodulation test
f 1= 806 MHz f2 = 810 MHz
Po = -10 dBm (both carriers)
IP3
-
30
-
dBm
Output power at 1dB gain
compression
f = 200 MHz to 1800 MHz
P-1dB
-
17.5
-
dBm
GaAs MMIC
CGY 62
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 3/5
15.01.96
HL EH PD 21
Electrical characteristics
at TA = 25C
VD = 4.5 V
RS = RL = 50
unless otherwise specified
Noise figure F=f(f)
Power gain G=f(f)
V
S
= 4.5V
V
S
= 4.5V
5
4
3
2
1
0
f [GHz]
F [dB]
0
8
4
12
16
20
24
f [GHz]
G [dB]
0.1
0.6
1.1
1.6
2.1
2.6
0.1
0.6
1.1
1.6
2.1
2.6
typ.
typ.
GaAs MMIC
CGY 62
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 4/5
15.01.96
HL EH PD 21
Typical S-Parameters
( VD = 4.5 V VG = 0 V Zo = 50
)
f/GHz
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.1
0.81
-42
6.64
48
0.006
107.0
0.29
-19
0.3
0.41
-84
10.06
4
0.010
40.0
0.21
-31
0.5
0.28
-105
10.75
-19
0.011
30.0
0.18
-34
0.7
0.21
-118
10.82
-38
0.011
31.0
0.17
-32
0.9
0.17
-124
10.66
-54
0.012
30.0
0.17
-32
1.1
0.13
-128
10.37
-71
0.013
31.0
0.17
-29
1.3
0.11
-129
9.95
-86
0.013
33.0
0.16
-24
1.5
0.08
-131
9.41
-101
0.014
33.0
0.16
-17
1.7
0.06
-134
8.80
-116
0.015
34.0
0.17
-9
1.9
0.04
-141
8.10
-130
0.015
33.0
0.19
-2
2.1
0.03
-141
7.29
-143
0.015
39.0
0.20
-3
2.3
0.05
-172
6.61
-155
0.016
42.0
0.20
0
2.5
0.07
163
6.04
-166
0.018
44.0
0.19
3
2.7
0.09
152
5.46
-178
0.019
44.0
0.19
4
2.9
0.11
149
4.92
172
0.021
45.0
0.18
4
3.1
0.14
149
4.45
161
0.022
45.0
0.17
1
3.3
0.16
150
4.00
152
0.024
45.0
0.16
-4
3.5
0.18
150
3.61
142
0.026
44.0
0.15
-10
3.7
0.18
151
3.21
132
0.027
44.0
0.16
-17
3.9
0.19
156
2.84
126
0.028
43.0
0.17
-29
GaAs MMIC
CGY 62
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 5/5
15.01.96
HL EH PD 21
Application Circuit
f = 800 MHz to 1800 MHz
Vs
1 nF
100 pF
100 pF
27 nH
39 nH
Interstage
3
4
IN
1
OUT
GND 2,5,6
Output
50 Ohm
Input
50 Ohm
CGY62
50 Ohm Microstripline
Pin assignment:
Pin 1
Pin 2
Pin 3
Pin 4
Pin 5
Pin 6
OUT
GND
Interstage
IN
GND
GND
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