Semiconductor Group
1
1998-10-01
256k
16-Bit EDO-DRAM
Advanced Information
262 144 words by 16-bit organization
0 to 70
C operating temperature
Fast access and cycle time
RAS access time:
50 ns (-50 version)
55 ns (-55 version)
60 ns (-60 version)
CAS access time:
13 ns (-50 & -55 version)
15 ns (-60 version)
Cycle time:
89 ns (-50 version)
94 ns (-55 version)
104 ns (-60 version)
Hyper page mode (EDO) cycle time
20 ns (-50 & -55 version)
25 ns (-60 version)
High data rate
50 MHz (-50 & -55 version)
40 MHz (-60 version)
Single + 5 V (
10 %) supply with a built-in
V
BB
generator
Low Power dissipation
max. 1100 mW active (-50 version)
max. 1045 mW active (-55 version)
max. 935 mW active (-60 version)
Standby power dissipation
11 mW standby (TTL)
5.5 mW max. standby (CMOS)
Output unlatched at cycle end allows
two-dimensional chip selection
Read, write, read-modify write,
CAS-before-RAS refresh, RAS-only
refresh, hidden-refresh and hyper page
(EDO) mode capability
2 CAS/1 WE control
All inputs and outputs TTL-compatible
512 refresh cycles/16 ms
Plastic Packages:
P-SOJ-40-1 400 mil width
HYB 514175BJ-50/-55/-60
HYB 514175BJ/BJL-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
2
1998-10-01
The HYB 514175BJ is the new generation dynamic RAM organized as 262 144 words by 16-bit.
The HYB 514175BJ utilizes CMOS silicon gate process as well as advanced circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 514175BJ to be packed in a standard plastic 400 mil wide P-SOJ-40-1 package.
This package size provides high system bit densities and is compatible with commonly used
automatic testing and insertion equipment. System oriented features include single + 5 V (
10 %)
power supply, direct interfacing with high performance logic device families such as Schottky TTL.
Ordering Information
Type
Ordering Code
Package
Description
HYB 514175BJ-50
Q67100-Q2072
P-SOJ-40-1 400 mil
50 ns 256k
16 EDO-DRAM
HYB 514175BJ-55
Q67100-Q2100
P-SOJ-40-1 400 mil
55 ns 256k
16 EDO-DRAM
HYB 514175BJ-60
Q67100-Q2073
P-SOJ-40-1 400 mil
60 ns 256k
16 EDO-DRAM
Truth Table
RAS
LCAS
UCAS
WE
OE
I/O1 - I/O8
I/O9 - I/O16
Operation
H
L
L
L
L
L
L
L
L
H
H
L
H
L
L
H
L
L
H
H
H
L
L
H
L
L
L
H
H
H
H
H
L
L
L
H
H
H
L
L
L
H
H
H
H
High-Z
High-Z
Dout
High-Z
Dout
Din
Don't care
Din
High-Z
High-Z
High-Z
High-Z
Dout
Dout
Don't care
Din
Din
High-Z
Standby
Refresh
Lower byte read
Upper byte read
Word read
Lower byte write
Upper byte write
Word write
-
Pin Names
A0 - A8
Address Inputs
RAS
Row Address Strobe
UCAS, LCAS
Column Address Strobe
WE
Read/Write Input
OE
Output Enable
I/O1 -I/O16
Data Input/Output
V
CC
Power Supply (+ 5 V)
V
SS
Ground (0 V)
N.C.
No Connection
HYB 514175BJ-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
3
1998-10-01
Pin Configuration
(top view)
P-SOJ-40-1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
A5
A6
A7
OE
A8
UCAS
I/O11
I/O13
I/O12
A0
A1
A2
I/O3
I/O4
I/O5
I/O6
I/O7
WE
RAS
N.C.
SPP02811
V
SS
SS
V
CC
V
I/O8
I/O10
I/O16
I/O15
SS
V
I/O1
I/O2
V
CC
19
20
18
V
CC
N.C.
N.C.
A3
A4
LCAS
N.C.
40
39
38
I/O9
I/O14
HYB 514175BJ/BJL-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
4
1998-10-01
Block Diagram
Data In
Buffer
Data Out
Buffer
I/O1 I/O2
I/O16
OE
Column
Decoder
Sense Amplifier
I/O Gating
&
No.2 Clock
Generator
Column
Address
Buffers (9)
Refresh
Controller
Refresh
Counter (9)
Buffers (9)
Address
Row
No.1 Clock
Generator
9
9
Memory Array
Decoder
Row
.
.
.
.
.
.
. .
.
.. .
16
16
16
9
9
WE
LCAS
RAS
SPB02827
. . .
9
. .
.
.
UCAS
Generator
Substrate Bias
V
CC
SS
V
A8
A7
A6
A5
A4
A3
A2
A1
A0
512 x 512 x 16
512
512
16
x
HYB 514175BJ-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
5
1998-10-01
Absolute Maximum Ratings
Operating temperature range ....................................................................................... 0 to + 70
C
Storage temperature range.................................................................................... 55 to + 150
C
Input/output voltage ....................................................................................................... 1 to + 6 V
Power supply voltage..................................................................................................... 1 to + 6 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
T
A
= 0 to 70
C;
V
SS
= 0 V;
V
CC
= 5 V
10 %,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Input high voltage
V
IH
2.4
V
CC
+ 0.5 V
1
Input low voltage
V
IL
1.0
0.8
V
1
Output high voltage (
I
OUT
= 5.0 mA)
V
OH
2.4
V
1
Output low voltage (
I
OUT
= 4.2 mA)
V
OL
0.4
V
1
Input leakage current, any input
(0 V <
V
IN
< 7 V, all other inputs = 0 V)
I
I(L)
10
10
A
1
Output leakage current
(DO is disabled, 0 V <
V
OUT
<
V
CC
)
I
O(L)
10
10
A
1
Average
V
CC
supply current
-50 version
-55 version
-60 version
I
CC1
200
190
170
mA
2, 3, 4
Standby
V
CC
supply current
(RAS = LCAS = UCAS = WE =
V
IH
)
I
CC2
2
mA
Average
V
CC
supply current during
RAS-only refresh cycles
-50 version
-55 version
-60 version
I
CC3
200
190
170
mA
2, 4
Average
V
CC
supply current during
hyper page mode (EDO) operation
-50 version
-55 version
-60 version
I
CC4
190
180
170
mA
2, 3, 4
HYB 514175BJ/BJL-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
6
1998-10-01
Standby
V
CC
supply current
(RAS = LCAS = UCAS = WE =
V
CC
0.2 V)
I
CC5
1
mA
1
Average
V
CC
supply current during
CAS-before-RAS refresh mode
-50 version
-55 version
-60 version
I
CC6
200
190
170
mA
2, 4
Capacitance
T
A
= 0 to 70
C;
V
CC
= 5 V
10 %,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A8)
C
I1
5
pF
Input capacitance (RAS, UCAS, LCAS, WE, OE)
C
I2
7
pF
Output capacitance (l/O1 to l/O16)
C
IO
7
pF
AC Characteristics
5, 6
T
A
= 0 to 70
C;
V
SS
= 0 V;
V
CC
= 5 V
10 %,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-55
-60
min. max. min. max. min. max.
Common Parameters
Random read or write cycle time
t
RC
89
94
104
ns
RAS precharge time
t
RP
35
35
40
ns
RAS pulse width
t
RAS
50
10k
55
10k
60
10k
ns
CAS pulse width
t
CAS
8
10k
8
10k
10
10k
ns
Row address setup time
t
ASR
0
0
0
ns
Row address hold time
t
RAH
8
8
10
ns
Column address setup time
t
ASC
0
0
0
ns
Column address hold time
t
CAH
8
8
10
ns
RAS to CAS delay time
t
RCD
12
37
12
43
14
45
ns
RAS to column address delay time
t
RAD
10
25
10
30
12
30
ns
DC Characteristics (cont'd)
T
A
= 0 to 70
C;
V
SS
= 0 V;
V
CC
= 5 V
10 %,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
HYB 514175BJ-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
7
1998-10-01
RAS hold time
t
RSH
13
13
15
ns
CAS hold time
t
CSH
40
45
50
ns
CAS to RAS precharge time
t
CRP
5
5
5
ns
Transition time (rise and fall)
t
T
1
50
1
50
1
50
ns
7
Refresh period
t
REF
16
16
16
ms
Read Cycle
Access time from RAS
t
RAC
50
55
60
ns
8, 9
Access time from CAS
t
CAC
13
13
15
ns
8, 9
Access time from column address
t
AA
25
25
30
ns
8, 10
OE access time
t
OEA
13
13
15
ns
Column address to RAS lead time
t
RAL
25
25
30
ns
Read command setup time
t
RCS
0
0
0
ns
Read command hold time
t
RCH
0
0
0
ns
11
Read command hold time ref. to RAS
t
RRH
0
0
0
ns
11
CAS to output in low-Z
t
CLZ
0
0
0
ns
8
Output buffer turn-off delay from CAS
t
OFF
0
13
0
13
0
15
ns
12
Output buffer turn-off delay from OE
t
OEZ
0
13
0
13
0
15
ns
12
Data to OE low delay
t
DZO
0
0
0
ns
13
CAS high to data delay
t
CDD
10
10
13
ns
14
OE high to data delay
t
ODD
10
10
13
ns
14
Write Cycle
Write command hold time
t
WCH
8
8
10
ns
Write command pulse width
t
WP
8
8
10
ns
Write command setup time
t
WCS
0
0
0
ns
15
Write command to RAS lead time
t
RWL
13
13
15
ns
Write command to CAS lead time
t
CWL
13
13
15
ns
Data setup time
t
DS
0
0
0
ns
16
Data hold time
t
DH
8
8
10
ns
16
Data to CAS low delay
t
DZC
0
0
0
ns
13
AC Characteristics
(cont'd)5, 6
T
A
= 0 to 70
C;
V
SS
= 0 V;
V
CC
= 5 V
10 %,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-55
-60
min. max. min. max. min. max.
HYB 514175BJ/BJL-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
8
1998-10-01
Read-Modify-Write Cycle
Read-write cycle time
t
RWC
118
122
138
ns
RAS to WE delay time
t
RWD
64
69
77
ns
15
CAS to WE delay time
t
CWD
27
27
32
ns
15
Column address to WE delay time
t
AWD
39
39
47
ns
15
OE command hold time
t
OEH
10
10
13
ns
Hyper Page Mode (EDO) Cycle
Hyper page mode cycle time
t
HPC
20
20
25
ns
CAS precharge time
t
CP
8
8
10
ns
Access time from CAS precharge
t
CPA
27
27
32
ns
7
Output data hold time
t
COH
5
5
5
ns
RAS pulse width in hyper page mode
t
RAS
50
200k 55
200k 60
200k ns
RAS hold time from CAS precharge
t
RHCP
27
27
32
ns
Hyper Page Mode (EDO) Read-Modify-Write Cycle
Hyper page mode read/write cycle
time
t
PRWC
58
58
68
ns
CAS precharge to WE delay time
t
CPWD
41
41
49
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
5
5
5
ns
CAS hold time
t
CHR
10
10
10
ns
RAS to CAS precharge time
t
RPC
5
5
5
ns
Write to RAS precharge time
t
WRP
10
10
10
ns
Write to RAS hold time
t
WRH
10
10
10
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t
CPT
35
35
40
ns
AC Characteristics
(cont'd)5, 6
T
A
= 0 to 70
C;
V
SS
= 0 V;
V
CC
= 5 V
10 %,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-55
-60
min. max. min. max. min. max.
HYB 514175BJ-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
9
1998-10-01
Notes
1. All voltages are referenced to
V
SS
.
2.
I
CC1
,
I
CC3
,
I
CC4
and
I
CC6
depend on cycle rate.
3.
I
CC1
and
I
CC4
depend on output loading. Specified values are obtained with the output open.
4. Address can be changed once or less while RAS =
V
IL
. In case of
I
CC4
it can be changed once
or less during a hyper page mode (EDO) cycle
5. An initial pause of 200
s is required after power-up followed by 8 RAS cycles of which at least
one cycle has to be a refresh cycle, before proper device operation is achieved. In case of using
the internal refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of
8 RAS cycles are required.
6. AC measurements assume
t
T
= 2 ns.
7.
V
IH (MIN.)
and
V
IL (MAX.)
are reference levels for measuring timing of input signals. Transition times
are also measured between
V
IH
and
V
IL
.
8. Measured with the specified current load and 100 pF at
V
OL
= 0.8 V and
V
OH
= 2.0 V. Access
time is determined by the latter of
t
RAC
,
t
CAC
,
t
AA
,
t
CPA
,
t
OEA
.
t
CAC
is measured from tristate.
9. Operation within the
t
RCD (MAX.)
limit ensures that
t
RAC (MAX.)
can be met.
t
RCD (MAX.)
is specified as
a reference point only. If
t
RCD
is greater than the specified
t
RCD (MAX.)
limit, then access time is
controlled by
t
CAC
.
10.Operation within the
t
RAD (MAX.)
limit ensures that
t
RAC (MAX.)
can be met.
t
RAD (MAX.)
is specified as
a reference point only. If
t
RAD
is greater than the specified
t
RAD (MAX.)
limit, then access time is
controlled by
t
AA
.
11.Either
t
RCH
or
t
RRH
must be satisfied for a read cycle.
12.
t
OFF (MAX.)
,
t
OEZ (MAX.)
define the time at which the output achieves the open-circuit conditions and
are not referenced to output voltage levels.
t
OFF
is referenced from the rising edge of RAS or
CAS, whichever occurs last.
13.Either
t
DZC
or
t
DZO
must be satisfied.
14.Either
t
CDD
or
t
ODD
must be satisfied.
15.
t
WCS
,
t
RWD
,
t
CWD
and
t
AWD
are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only. If
t
WCS
>
t
WCS (MIN.)
, the cycle is an early write cycle and
data out pin will remain open-circuit (high impedance) through the entire cycle; if
t
RWD
>
t
RWD (MIN.)
,
t
CWD
>
t
CWD (MIN.)
and
t
AWD
>
t
AWD (MIN.)
, the cycle is a read-write cycle and I/O will
contain data read from the selected cells. If neither of the above sets of conditions is satisfied, the
condition of I/O (at access time) is indeterminated.
16.These parameters are referenced to the CAS leading edge in early write cycles and to the WE
leading edge in read-write cycles.
HYB 514175BJ/BJL-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
10
1998-10-01
Read Cycle
SPT03043
"H" or "L"
OEA
CAC
RAL
t
OH
OL
V
(Inputs)
(Outputs)
I/O
I/O
V
IH
V
IL
V
OE
WE
V
IL
V
IH
V
IL
V
IH
RAC
t
Hi
DZO
Z
t
CLZ
t
t
DZC
t
RCS
AA
t
t
LCAS
V
Address
V
IL
V
IH
IL
UCAS
RAS
IL
V
IH
V
V
IH
t
RAD
ASR
t
Row
t
Column
RAH
ASC
t
CAH
t
t
RCD
t
CSH
t
t
RAS
t
t
ODD
RRH
Valid Data OUT
OEZ
t
t
CDD
OFF
t
Hi Z
t
t
RSH
CAS
t
RC
t
RCH
ASR
t
Row
CRP
t
t
RP
HYB 514175BJ-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
11
1998-10-01
Write Cycle (Early Write)
SPT03044
"H" or "L"
RWL
RAL
WCS
OH
(Inputs)
(Outputs)
I/O
I/O
IL
V
OL
V
V
V
IH
OE
WE
IH
V
IL
V
V
IL
V
IH
t
DS
t
Valid
DH
Data IN
WCH
t
t
WP
t
LCAS
V
Address
IH
V
V
IL
IL
UCAS
RAS
V
IH
IH
V
V
IL
t
RAD
ASR
t
t
RAH
Row
t
Column
ASC
t
CWL
t
CAH
t
t
RCD
t
CSH
t
t
RAS
t
Z
Hi
t
RC
CAS
RSH
t
ASR
t
Row
CRP
t
t
RP
HYB 514175BJ/BJL-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
12
1998-10-01
Write Cycle (OE Controlled Write)
SPT03045
"H" or "L"
DS
RAL
CAS
V
OH
V
(Inputs)
(Outputs)
I/O
I/O
V
V
OL
IL
V
IH
OE
WE
V
IL
IL
V
IH
V
IH
t
DZO
Hi Z
t
CLZ
t
OEA
t
OEZ
t
DZC
ODD
t
t
V
Address
IL
V
V
IH
LCAS
UCAS
RAS
V
IL
V
IH
IL
V
IH
RAD
ASR
t
RAH
t
Row
t
t
Column
ASC
t
CAH
RCD
t
t
t
CSH
t
RAS
t
Hi
Valid Data
t
DH
OEH
t
Z
RWL
CWL
t
t
WP
t
RSH
t
ASR
t
Row
CRP
t
t
RC
t
RP
HYB 514175BJ-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
13
1998-10-01
Read-Write (Read-Modify-Write) Cycle
SPT03046
"H" or "L"
AWD
OEA
CSH
RWD
OH
I/O
(Outputs) V
OL
(Inputs)
I/O
IL
V
V
V
IH
OE
WE
V
IL
V
IH
V
IL
V
IH
RAC
t
t
DZC
t
DZO
t
CLZ
t
CAC
t
RCS
t
AA
t
V
Address
V
IL
V
IH
LCAS
UCAS
RAS
IH
V
IL
V
V
IL
IH
RAH
Row
ASR
t
t
RAD
t
Column
ASC
t
t
t
CAH
t
RCD
t
t
t
WP
Data
OUT
DS
ODD
OEZ
t
t
t
t
Data IN
Valid
t
DH
OEH
Row
t
CWD
t
CAS
t
t
RSH
RWL
t
t
CWL
ASR
t
CRP
t
RP
t
RWC
t
RAS
HYB 514175BJ/BJL-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
14
1998-10-01
Hyper Page Mode (EDO) Read Cycle
SPT03056
"H" or "L"
Column 2
Data OUT 1
t
t
OH
OL
IL
IH
IL
IH
I/O
(Output) V
V
V
OE
WE
V
V
V
RCS
CAC
t
CLZ
RAC
t
AA
t
t
OES
OEA
t
t
IH
IL
IL
IH
IH
IL
Address
V
V
LCAS
UCAS
RAS
V
V
V
V
RCD
ASC
Column 1
Row
ASR
t
RAD
t
t
RAH
t
t
CRP
t
CSH
CAH
t
ASC
t
HPC
CAS
t
t
t
CP
t
RCH
Data OUT N
t
Data OUT 2
t
COH
AA
t
CPA
t
CAC
t
t
COH
t
AA
CPA
t
CAC
t
t
OEZ
OFF
CRP
RP
RHCP
Column N
CAH
t
CAS
t
t
CAH
ASC
t
t
RAL
RRH
t
RSH
t
CAS
t
t
t
RAS
t
t
HYB 514175BJ-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
15
1998-10-01
Hyper Page Mode (EDO) Early Write Cycle
SPT03057
"H" or "L"
Column 2
DS
t
IH
V
I/O
(Input)
OE
V
V
IL
IH
V
IL
WE
V
V
IL
IH
Data IN 1
t
DS
WCS
t
t
DH
t
WP
CWL
t
t
WCH
t
t
WCS
LCAS
Address
V
IL
V
IH
IL
V
UCAS
RAS
V
IH
IL
V
V
IH
t
Column 1
t
ASC
Address
Row
ASR
t
RAD
t
RAH
t
t
CRP
t
RCD
t
CSH
CAH
ASC
t
HPC
CAS
t
t
CP
t
Data IN N
DS
Data IN 2
t
DH
t
CWL
WCH
WP
t
t
t
t
WCS
t
DH
t
t
WCH
WP
t
CWL
CRP
RP
t
Column N
CAH
t
ASC
t
t
CAS
RWL
t
t
CAH
t
RAL
RSH
t
CAS
t
RHCP
t
t
RAS
HYB 514175BJ/BJL-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
16
1998-10-01
Hyper Page Mode (EDO) Late Write and Read-Modify-Write Cycles
IL
OEH
OEZ
RAC
(Outputs)
I/O
"H" or "L"
V
OH
V
OL
Data
OUT
t
I/O
(Inputs)
OE
CLZ
V
IL
V
IH
DZC
t
CAC
t
t
t
DS
DZO
t
ODD
t
V
IL
IH
V
t
AA
t
t
OEA
t
t
AWD
AA
DS
AA
OUT
Data
OEZ
t
OEZ
OUT
Data
t
SPT03131
t
CLZ
CAC
IN
Data
DH
t
t
CPA
t
DZC
t
IN
Data
t
t
DH
t
t
ODD
t
DZC
t
t
CPA
CLZ
t
WP
t
t
OEA
AWD
t
t
WP
OEH
t
t
IN
Data
DH
DS
t
t
ODD
t
OEA
AWD
t
t
OEH
WP
t
CWL
Address
WE
LCAS
UCAS
V
RCS
V
V
IH
t
V
IL
IH
Row
t
CWD
t
t
RWD
Column
RCD
ASC
IL
V
ASR
t
t
RAH
t
t
RAD
V
IH
t
CAH
t
CAS
t
RAS
V
IL
V
IH
CSH
t
CAH
CPWD
CWD
t
Column
CPWD
t
CWL
t
t
Column
ASC
t
CAH
t
t
CP
t
t
ASC
t
PRWC
CAS
t
t
CWD
CWL
t
RWL
t
Row
t
RAL
RSH
CAS
t
t
ASR
t
CRP
t
t
RASP
t
RP
HYB 514175BJ-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
17
1998-10-01
RAS-Only Refresh Cycle
SPT03050
"H" or "L"
OH
OL
(Outputs)
Address
I/O
V
V
V
IL
IH
V
Row
LCAS
UCAS
RAS
IL
V
V
IH
V
IL
IH
V
RAH
ASR
t
t
RAS
t
Row
Z
Hi
t
RC
t
RPC
ASR
t
CRP
t
RP
t
HYB 514175BJ/BJL-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
18
1998-10-01
CAS-Before-RAS Refresh Cycle
SPT03051
"H" or "L"
V
IL
IH
IH
IL
OL
OH
IL
(Outputs)
I/O
V
V
(Inputs)
OE
I/O
V
V
V
V
t
OFF
OEZ
t
t
CDD
ODD
t
IH
IL
IH
IH
IL
LCAS
WE
UCAS
V
V
V
RAS
V
V
WRP
CSR
t
t
CP
t
RPC
t
RP
t
t
WRH
t
CHR
Hi Z
RAS
t
RC
t
t
RPC
t
RP
CRP
t
HYB 514175BJ-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
19
1998-10-01
Hidden Refresh Cycle (Read)
SPT03053
"H" or "L"
V
I/O
(Outputs)
OL
V
(Inputs)
I/O
OH
V
V
IL
IH
V
OE
WE
V
IL
IH
V
IL
IH
V
CLZ
RAC
t
t
DZO
t
t
DZC
t
CAC
OEA
AA
t
t
Address
V
IL
IH
V
LCAS
UCAS
RAS
V
IL
IH
V
IL
V
IH
V
Column
RAS
t
t
RAH
Row
ASR
t
t
RCS
ASC
t
t
RCD
RAD
t
CAH
t
RRH
t
WRP
t
t
RSH
t
RC
RP
t
Valid Data OUT
OEZ
t
OFF
t
ODD
t
Hi Z
t
CDD
Row
WRH
t
t
CHR
RAS
t
ASR
t
CRP
t
RC
t
t
RP
HYB 514175BJ/BJL-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
20
1998-10-01
Hidden Refresh Cycle (Early Write)
SPT03054
"H" or "L"
WRP
Column
Row
Address
(Output)
(Input)
I/O
I/O
OL
V
OH
V
IN
V
V
IL
WE
IL
V
IH
V
V
IL
Valid Data
t
DS
t
WCS
t
DH
WP
t
WCH
t
t
ASR
V
LCAS
UCAS
IH
V
t
IL
IH
V
RAS
V
IL
IH
V
RAS
RAD
ASC
RAH
t
t
t
RCD
t
t
CAH
t
RSH
t
t
RC
RP
t
Row
Hi Z
t
WRH
RC
t
RAS
CHR
t
t
ASR
t
CRP
t
RP
t
HYB 514175BJ-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
21
1998-10-01
CAS-Before-RAS Refresh Counter Test Cycle
SPT03055
"H" or "L"
t
WCH
t
t
DZC
t
(Inputs)
(Outputs)
I/O
I/O
OH
OL
V
IL
V
V
IH
V
Write Cycle
OE
WE
IL
IL
V
IH
V
V
IH
V
(Inputs)
(Outputs)
I/O
I/O
OL
V
OH
V
IL
V
IH
V
t
DS
Z
Hi
Data IN
t
WRP
WRH
t
DH
t
t
DZO
WCS
t
t
t
CLZ
OE
WE
IL
V
IH
V
IL
V
IH
V
LCAS
Address
UCAS
IH
IL
V
V
V
IL
IH
V
Read Cycle
RAS
V
IH
IL
V
WRP
t
WRH
t
t
RCS
AA
t
CAC
t
ASC
t
t
CAH
Column
CSR
t
CHR
t
CP
t
RAS
t
RWL
CWL
t
Data OUT
t
OEZ
t
OFF
t
ODD
OEA
t
RRH
RAL
CAS
t
CDD
t
RCH
t
t
ASR
Row
RSH
t
t
RP
HYB 514175BJ/BJL-50/-55/-60
256k
16 EDO-DRAM
Semiconductor Group
22
1998-10-01
Package Outlines
Plastic Package, P-SOJ-40-1 (SMD)
(Plastic small outline J-leaded)
GPJ09018
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book "Package Information".
Dimensions in mm
SMD = Surface Mounted Device
PDF 
ZIP