Semiconductor Group
1
07.96
Differential Magneto Resistor
FP 412 D 250
Dimensions in mm
Features
Accurate intercenter spacing
High operating temperature range
High output voltage
Signal amplitude independent of speed
Compact construction
Available in strip form for automatic
assembly
Typical applications
Detection of speed
Detection of position
Detection of sense of rotation
Angular encoders
Linear position sensing
Type
Ordering Code
FP 412 D 250
Q65412-D 250
Semiconductor Group
2
FP 412 D 250
The differential magneto resistor FP 412 D 250 is a magnetically variable resistor in D-
type InSb/NiSb semiconductor material. The MR is glued onto a ferrite substrate and is
supplied in a "MICROPACK" copper/polyimide film package. The basic resistance of
each of the magneto resistors is 250
. The series coupled MRs are actuated by an
external magnetic field or can be biased by a permanent magnet and actuated by a soft
iron target.
Maximum ratings
Characteristics (
T
A
= 25
C)
Parameter
Symbol
Value
Unit
Operating temperature
T
A
40 / +175
C
Storage temperature
T
stg
40 / +185
C
Power dissipation
1)
P
tot
1000
mW
Supply voltage
2)
(
B
= 0.2 T)
V
IN
12
V
Thermal conductivity
attached to heatsink
in still air
G
th case
G
th A
25
1
mW/K
mW/K
Basic resistance
(
I
1 mA,
B
= 0 T)
R
01-3
370
...
630
Center symmetry
3)
M
10
%
Relative resistance change
(
R
0
=
R
01-3
,
R
04-6
at
B
= 0 T)
B
=
0.3 T
4)
B
=
1 T
R
B
/
R
0
> 2.8
> 12
Temperature coefficient
B
= 0 T
B
=
0.3 T
B
=
1 T
TC
R
1.8
2.7
2.9
%/K
%/K
%/K
1) Corresponding to diagram
P
tot
=
f
(
T
case
)
2) Corresponding to diagram
V
IN
=
f(T
case
)
3)
4) 1 T = 1 Tesla = 10
4
Gauss
M
R
01
2
R
02
3
--------------------------------
=
100% for
R
01-2
>
R
02-3
R
01
2
Semiconductor Group
3
FP 412 D 250
Max. power dissipation versus
temperature
P
tot
=
f
(
T
),
T
=
T
case
,
T
A
Typical MR resistance
versus temperature
R
1-3
=
f
(
T
A
),
B
= Parameter
Maximum supply voltage
versus temperature
V
IN
=
f
(
T
),
B
= 0.2 T
T
=
T
case
,
T
A
Typical MR resistance
versus magnetic induction
B
R
1-3
=
f
(
B
),
T
A
= 25
C
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