Semiconductor Group
1
Dec-02-1996
BUP 402
IGBT
Preliminary data
Low forward voltage drop
High switching speed
Low tail current
Latch-up free
Avalanche rated
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
CE
I
C
Package
Ordering Code
BUP 402
600V
36A
TO-220 AB
C67078-A4405-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
600
V
Emitter-collector voltage
V
EC
Collector-gate voltage
R
GE
= 20 k
V
CGR
600
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 25 C
T
C
= 90 C
I
C
22
36
A
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 C
T
C
= 90 C
I
Cpuls
40
72
Avalanche energy, single pulse
I
C
= 20 A,
V
CC
= 50 V,
R
GE
= 25
L = 200 H, T
j
= 25 C
E
AS
42
mJ
Power dissipation
T
C
= 25 C
P
tot
150
W
Chip or operating temperature
T
j
- 55 ... + 150
C
Storage temperature
T
stg
- 55 ... + 150
Semiconductor Group
2
Dec-02-1996
BUP 402
Maximum Ratings
Parameter
Symbol
Values
Unit
DIN humidity category, DIN 40 040
-
E
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
R
thJC
0.83
K/W
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 0.5 mA,
T
j
= 25 C
V
GE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 20 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 20 A,
T
j
= 125 C
V
GE
= 15 V,
I
C
= 40 A,
T
j
= 25 C
V
GE
= 15 V,
I
C
= 40 A,
T
j
= 125 C
V
CE(sat)
-
-
-
-
3.3
3
2.2
2.1
-
-
2.8
2.7
Zero gate voltage collector current
V
CE
= 600 V,
V
GE
= 0 V,
T
j
= 25 C
I
CES
-
-
100
A
Gate-emitter leakage current
V
GE
= 25 V,
V
CE
= 0 V
I
GES
-
-
100
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 20 A
g
fs
4
-
-
S
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
iss
-
1040
1400
pF
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
oss
-
115
175
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f = 1 MHz
C
rss
-
66
110
Semiconductor Group
3
Dec-02-1996
BUP 402
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at
T
j
= 125 C
Turn-on delay time
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 20 A
R
Gon
= 47
t
d(on)
-
40
60
ns
Rise time
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 20 A
R
Gon
= 47
t
r
-
70
110
Turn-off delay time
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 20 A
R
Goff
= 47
t
d(off)
-
250
330
Fall time
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 20 A
R
Goff
= 47
t
f
-
500
680
Semiconductor Group
4
Dec-02-1996
BUP 402
Power dissipation
P
tot
=
(
T
C
)
parameter:
T
j
150 C
0
20
40
60
80
100
120
C
160
T
C
0
20
40
60
80
100
120
W
160
P
tot
Collector current
I
C
=
(
T
C
)
parameter:
V
GE
15 V ,
T
j
150 C
0
20
40
60
80
100
120
C
160
T
C
0
4
8
12
16
20
24
28
A
36
I
C
Safe operating area
I
C
=
(
V
CE
)
parameter:
D = 0, T
C
= 25C ,
T
j
150 C
-1
10
0
10
1
10
2
10
A
I
C
10
0
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 s
t
p
= 17.0s
Transient thermal impedance IGBT
Z
th JC
=
(
t
p
)
parameter:
D = t
p
/
T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group
5
Dec-02-1996
BUP 402
Typ. output characteristics
I
C
=
f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0
1
2
3
V
5
V
CE
0
5
10
15
20
25
30
A
40
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125 C
0
1
2
3
V
5
V
CE
0
5
10
15
20
25
30
A
40
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
=
f (V
GE
)
parameter:
t
p
= 80 s,
V
CE
= 20 V
0
2
4
6
8
10
V
14
V
GE
0
5
10
15
20
25
30
A
40
I
C
Semiconductor Group
6
Dec-02-1996
BUP 402
Typ. switching time
t = f (R
G
)
, inductive load ,
T
j
= 125C
par.:
V
CE
= 300 V,
V
GE
= 15 V,
I
C
= 20 A
0
20
40
60
80
120
R
G
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
I = f (I
C
)
, inductive load , T
j
= 125C
par.:
V
CE
= 300 V,
V
GE
= 15 V,
R
G
= 47
0
5
10
15
20
25
30
35
40
A
50
I
C
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (I
C
)
,
inductive load ,
T
j
= 125C
par.:
V
CE
= 300 V,
V
GE
= 15 V,
R
G
= 47
0
5
10
15
20
25
30
35
40
A
50
I
C
0.0
0.5
1.0
1.5
2.0
mWs
3.0
E
Eon
Eoff
Typ. switching losses
E = f (R
G
)
, inductive load , T
j
= 125C
par.:
V
CE
= 300V,
V
GE
= 15 V,
I
C
= 20 A
0
20
40
60
80
120
R
G
0.0
0.5
1.0
1.5
2.0
mWs
3.0
E
Eon
Eoff
Semiconductor Group
7
Dec-02-1996
BUP 402
Typ. gate charge
V
GE
=
(
Q
Gate
)
parameter:
I
C puls
= 20 A
0
10
20
30
40
50
60
70
nC
90
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
300 V
100 V
Typ. capacitances
C = f (V
CE
)
parameter:
V
GE
= 0 V, f = 1 MHz
0
5
10
15
20
25
30
V
40
V
CE
-2
10
-1
10
0
10
1
10
nF
C
Ciss
Coss
Crss
Short circuit safe operating area
I
Csc
=
f (V
CE
) ,
T
j
= 150C
parameter:
V
GE
= 15 V,
t
sc
10 s, L < 50 nH
0
100
200
300
400
500
600
V
800
V
CE
0
2
4
6
10
I
Csc
/
I
C(90C)
Reverse biased safe operating area
I
Cpuls
=
f (V
CE
) ,
T
j
= 150C
parameter:
V
GE
= 15 V
0
100
200
300
400
500
600
V
800
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls
/
I
C
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