51
FEATURES
Isolation Test Voltage: 2500 VAC
RMS
TTL Compatible
High Bit Rates: 1 Mbit/s
High Common-Mode Interference Immunity
Bandwidth 2 MHz
Open-Collector Output
External Base Wiring Possible
Field-Effect Stable by TRIOS*
Underwriters Lab File #E52744
DESCRIPTION
The 6N135 and 6N136 are optocouplers with a
GaAIAs infrared emitting diode, optically coupled
with an integrated photodetector which consists of
a photodiode and a high-speed transistor in
a
DIP-
8 plastic package.
Signals can be transmitted between two electri-
cally separated circuits up to frequencies of 2
MHz. The potential difference between the circuits
to be coupled is not allowed to exceed the maxi-
mum permissible reference voltages.
Maximum Ratings
Emitter
Reverse Voltage .................................................5 V
Forward Current ............................................25 mA
Peak Forward Current
(t =1 ms, duty cycle 50%) ............................50 mA
Maximum Surge Forward Current
(t
1
s, 300 pulses/s).......................................1 A
Thermal Resistance................................... 700 K/W
Total Power Dissipation (T
A
70
C) ...............45 mW
Detector
Supply Voltage ..................................... 0.5 to 15 V
Output Voltage .................................... 0.5 to 15 V
Emitter-Base Voltage ......................................... 5 V
Output Current.................................................8 mA
Maximum Output Current ..............................16 mA
Base Current .................................................. 5 mA
Thermal Resistance................................... 300 K/W
Total Power Dissipation (T
A
70
C) .............100 mW
Package
Isolation Test Voltage (between emitter and
detector climate per DIN 40046,
part 2, Nov. 74 (t=1min.) ............... 2500 VAC
RMS
Pollution Degree (DIN VDE 0109) ......................... 2
Creepage
...........................................................
7 mm
Clearance
...........................................................
7 mm
Comparative Tracking Index per
DIN IEC112/VDE 0303 part 1,
Group IIIa per DIN VDE 6110 ........................ 175
Isolation Resistance
V
IO
=500 V, T
A
= 25
C ...............................
10
12
V
IO
=500 V, T
A
= 100
C .............................
10
11
Storage Temperature Range ....... 55
C to +125
C
Ambient Temperature Range ...... 55
C to +100
C
Soldering Temperature (max.
10 sec.,
dip soldering
0.5 mm from
case bottom).............................................. 260
C
*TRIOS
--
TR
ansparent
IO
n
S
hield
Characteristics
(T
A
=0 to 70
C unless otherwise specified, T
A
=25
C typ.)
Emitter
Symbol
Unit
Condition
Forward Voltage
V
F
1.6 (
1.9)
V
I
F
=16 mA
Breakdown Voltage
V
BR
5
V
I
R
=10
A
Reverse Current
I
R
0.5 (
10)
A
V
R
=5 V
Capacitance
C
O
125
pF
V
R
=0 V, f=1 MHz
Temperature Coeffi-
cient, Forward Voltage
V
F
/
T
A
-1.7
mV/
C
I
F
=16 mA
Detector
Supply Current
Logic Low
I
CCL
150
A
I
F
=16 mA, V
O
open,
V
CC
=15 V
Supply Current
Logic High
I
CCH
0.01 (
1)
A
I
F
=0 mA, V
O
open,
V
CC
=15 V
Output Voltage,
Output Low
6N135
6N136
V
OL
V
OL
0.1 (
0.4)
0.1 (
0.4)
V
V
I
F
=16 mA,
V
CC
=4.5 V
I
O
=1.1 mA
I
O
=2.4 mA
Output Current,
Output High
I
CH
3 (
500)
nA
I
F
=0 mA,
V
O
=V
CC
=5.5 V
Output Current,
Output High
I
CH
0.01 (
1)
A
I
F
=0 mA
V
O
=V
CC
=15 V
Current Gain
H
FE
150
V
O
=5 V, I
O
=3 mA
Package
Coupling Capacitance
Input-Output
C
IO
0.6
pF
f=1 MHz
Current Transfer Ratio
6N135
6N136
CTR
CTR
16 (
7)
35 (
19)
%
%
I
F
=16 mA, V
O
=0.4 V,
V
CC
=4.5 V, T
A
=25
C
6N135
6N136
CTR
CTR
5
15
%
I
F
=16 mA, V
O
=0.5 V,
V
CC
=4.5 V
Dimensions in inches (mm)
1
2
3
4
8
7
6
5
Cathode
(V
CC
)
NC
Anode
Cathode
NC
Base
(V
B
)
Collector
(V
O
)
Emitter
(GND)
.268 (6.81)
.255 (6.48)
3
4
6
5
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
4
Typ.
.100 (2.54)
Typ.
10
Typ.
3
9
.305 typ.
(7.75) typ.
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
1
2
8
7
Pin
One
I.D.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
6N135
6N136
HIGH-SPEED 2.5 kV TRIOS
OPTOCOUPLER
This document was created with FrameMaker 4.0.4
53
6N135/136
Figure 11. Delay times versus ambi-
ent temperature (I
F
=16 mA, V
CC
=5 V,
6N135: R
L
=4.1 k
, 6N136: R
L
=1.9 k
)
Figure 12. Current transfer ratio (nor-
malized) versus forward current
(I
F
=16 mA, V
O
=0.4 V, V
CC
=5 V,
T
A
=25
C)
Figure 8. Small signal transfer ratio ver-
sus forward current (V
CC
=5 V, T
A
=25
C)
Figure 9. Current transfer ratio (normal-
ized) versus ambient temperature (nor-
malized to I
F
=16 mA, V
O
=0.4 V, V
CC
=5 V,
T
A
=25
C)
Figure 10. Output current (high)versus
ambient temperature
(V
O
=V
CC
=5 V, I
F
=0)
Figure 5. Permissible forward current
of emitting diode versus ambient
temperature
Figure 6. Permissible total power dissi-
pation versus ambient temperature
Figure 7. Forward current of emitting
diodeversus forward voltage (T
A
=25
C)
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