536
Characteristics
(T
A
=25
C)
Sym-
bol
Min.
Typ
.
Max
.
Unit
Condition
Emitter
Forward Voltage
V
F
1.2
1.5
V
I
F
=20 mA
Reverse Current
I
R
10
A
V
R
=5 V
Detector
Forward Blocking
Voltage
V
DM
200
V
R
GK
=10 K
T
A
=100
C
Id=150
A
Reverse Blocking
Voltage
V
RM
200
V
On-state Voltage
VTM
1.2
V
I
TM
=300 mA
Holding Current
I
H
200
A
R
GK
=27 K
V
FX
=50 V
Gate Trigger
Voltage
V
GT
0.6
1.0
V
V
FX
=100 V
R
GK
=27 K
R
L
=10 K
Forward Leakage
Current
I
DM
50
A
R
GK
=10 K
V
RX
=200 V
I
F
=0,
T
A
=100
C
Reverse Leakage
Current
I
RM
50
A
R
GK
=27 K
V
RX
=200 V
I
F
=0,
T
A
=100
C
Package
Turn-0n Current
I
FT
15
30
mA
V
FX
=50 V
R
GK
=10 K
8
14
V
FX
=100 V
R
GK
=27 K
Isolation Capaci-
tance
2
pF
f=1 MHz
Package Dimensions in Inches (mm)
1
2
3
6
5
4
Gate
Anode
Cathode
Anode
Cathode
NC
.010 (.25)
.014 (.35)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
Pin One ID.
6
5
4
1
2
3
18
typ.
.300 (7.62)
.347 (8.82)
4
typ.
FEATURES
Turn On Current (I
FT
), 5.0 mA Typical
Gate Trigger Current (I
GT
), 20 mA
Surge Anode Current, 10 Amp
Blocking Voltage, 200 VAC
PK
Gate Trigger Voltage (V
GT
), 0.6 Volt
Isolation Voltage, 5300 VAC
RMS
Solid State Reliability
Standard DIP Package
Underwriters Lab File #E52744
DESCRIPTION
The 4N39 is an optically coupled SCR with a Gal-
lium Arsenide infrared emitter and a silicon photo
SCR sensor. Switching can be achieved while
maintaining a high degree of isolation between
triggering and load circuits. The 4N39 can be used
in SCR triac and solid state relay applications
where high blocking voltages and low input current
sensitivity are required.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................6.0 V
Peak Forward Current
(100
s, 1% Duty Cycle)............................. 1.0 A
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25
C..........................100 mW
Derate Linearly from 50
C .........................2 mW/
C
Detector
Reverse Gate Voltage .....................................6.0 V
Anode Peak Blocking Voltage .......................200 V
Peak Reverse Gate Voltage ...............................6 V
Anode Current ............................................ 300 mA
Surge Anode Current (100
s duration) .......... 10 A
Surge Gate Current (5 ms duration)........... 100 mA
Power Dissipation, 25
C ambient ..............400 mW
Derate Linearly from 25
C .........................8 mW/
C
Package
Isolation Test Voltage (1 sec.) .......... 5300 VAC
RMS
Isolation Resistance
V
IO
=500 V, T
A
=25
C ...............................
10
12
V
IO
=500 V, T
A
=100
C .............................
10
11
Total Package Dissipation ..........................450 mW
Derate Linearly from 50
C .........................9 mW/
C
Operating Temperature ................55
C to +100
C
Storage Temperature....................55
C to +150
C
Soldering Temperature (10 s.).......................260
C
4N39
PHOTO SCR OPTOCOUPLER
PDF 
ZIP