ChipFind - документация

Электронный компонент: 2SK2190

Скачать:  PDF   ZIP
SHINDENGEN
2SK2190
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
(FP10W50VX2)
500V 10A
Case : E-pack
VX-2 Series Power MOSFET
N-Channel Enhancement type
(Unit : mm)
Case : ITO-3P
Switching power supply of AC 100V input
High voltage power supply
Inverter
APPLICATION
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
FEATURES
Absolute Maximum Ratings Tc = 25
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
T
stg
-55150
Channel Temperature
T
ch
150
Drain-Source Voltage
V
DSS
500
V
Gate-Source Voltage
V
GSS
30
Continuous Drain CurrentDC
I
D
10
Continuous Drain CurrentPeak)
I
DP
30
A
Continuous Source CurrentDC
I
S
10
Total Power Dissipation
P
T
40
W
Single Pulse Avalanche Current
I
AS
T
ch
= 25
10
A
Dielectric Strength
Terminals to case, AC 1 minute
2
kV
Mounting Torque
Recommended torque : 0.5Nm
0.8
Nm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2190( FP10W50VX2 )
VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0V
500
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 500V, V
GS
= 0V
250
A
Gate-Source Leakage Current
I
GSS
V
GS
= 30V, V
DS
= 0V
0.1
Forward Tranconductance
g
fs
I
D
= 5A, V
DS
= 10V
2.4
6.3
S
Static Drain-Source On-tate Resistance
R
DS(ON)
I
D
= 5A, V
GS
= 10V
0.8
1.0
Gate Threshold Voltage
V
TH
I
D
= 1mA, V
DS
= 10V
2.5
3.0
3.5
V
Source-Drain Diode Forwade Voltage
V
SD
I
S
= 5A, V
GS
= 0V
1.5
Themal Resistance
jc
junction to case
3.12 /
Total Gate Charge
Q
g
V
DD
= 400V, V
GS
= 10V, I
D
= 10A
30
nC
Input Capacitance
C
iss
890
Reverse Transfer Capacitance
C
rss
V
DS
= 10V, V
GS
= 0V, f = 1MH
Z
70
pF
Output Capacitance
C
oss
200
Turn-On Time
t
on
I
D
= 5A, V
GS
= 10V, R
L
= 30
70
110
ns
Turn-Off Time
t
off
140
220
0
5
10
15
20
0
5
10
15
20
2SK2190
Transfer Characteristics
V
DS
= 25V
pulse test
TYP
Tc =
-
55
C
25
C
100
C
150
C
Gate-Source Voltage V
GS
[V]
Drain Current I
D
[A]
Static Drain-Source On-state Resistance
0.1
1
10
-50
0
50
100
150
2SK2190
V
GS
= 10V
pulse test
TYP
I
D
= 5A
Case Temperature Tc [
C]
Static Drain-Source On-state Resistance R
DS(ON)
[
]
Gate Threshold Voltage
0
1
2
3
4
5
6
-50
0
50
100
150
2SK2190
V
DS
= 10V
I
D
= 1mA
TYP
Case Temperature Tc [
C]
Gate Threshold Voltage V
TH
[V]
Safe Operating Area
0.01
0.1
1
10
100
1
10
100
1000
2SK2190
100
s
Tc = 25
C
Single Pulse
200
s
1ms
10ms
DC
Drain-Source Voltage V
DS
[V]
Drain Current I
D
[A]
R
DS(ON)
limit
Transient Thermal Impedance
0.01
0.1
1
10
2SK2190
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
Time t [s]
Transient Thermal Impedance
jc(t) [
C/W]
Capacitance
10
100
1000
10000
0
20
40
60
80
100
2SK2190
0.005
f=1MHz
Tc=25
C
TYP
Ciss
Coss
Crss
Drain-Source Voltage V
DS
[V]
Capacitance Ciss Coss Crss [pF]
0
20
40
60
80
100
0
50
100
150
2SK2190
Power Derating
Power Derating [%]
Case Temperature Tc [
C]
0
10
20
30
40
50
0
100
200
300
400
500
2SK2190
0
5
10
15
20
200V
Gate Charge Characteristics
I
D
= 10A
TYP
100V
V
DD
= 400V
V
GS
V
DS
Gate Charge Qg [nC]
Drain-Source Voltage V
DS
[V]
Gate-Source Voltage V
GS
[V]