SHINDENGEN
2SK1861
Copyright & Copy;2003 Shindengen Electric Mfg.Co.,Ltd.
( F04E15L )
150V 4A
OUTLINE DIMENSIONS
(Unit : mm)
RATINGS
Case : E-pack
VR Series Power MOSFET
N-Channel Enhancement type
Absolute Maximum Ratings (Tc = 25)
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
T
stg
-55 to 150
Channel Temperature
T
ch
150
Drain-Source Voltage
V
DSS
150
V
Gate-Source Voltage
V
GSS
20
Continuous Drain CurrentiDCj
I
D
4
Continuous Drain CurrentiPeak)
I
DP
12
A
Continuous Source CurrentiDCj
I
S
4
Total Power Dissipation
P
T
10
W
Copyright & Copy;2003 Shindengen Electric Mfg.Co.,Ltd.
2SK1861 ( F04E15L )
VR Series Power MOSFET
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
= 1mA, V
GS
= 0V
150
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 150V, V
GS
= 0V
250
A
Gate-Source Leakage Current
I
GSS
V
GS
= 20V, V
DS
= 0V
10
Forward Tran]conductance
g
fs
I
D
= 2A, V
DS
= 10V
1.8
3.6
S
Static Drain-Source On-]tate Resistance
R
DS(ON)
I
D
= 2A, V
GS
= 4V
0.42
0.6
I
D
= 2A, V
GS
= 10V
0.35
0.5
Gate Threshold Voltage
V
TH
I
D
= 1mA, V
DS
= 10V
1.0
1.5
2.0
V
Source-Drain Diode Forward Voltage
V
SD
I
S
= 4A, V
GS
= 0V
1.5
Thermal Resistance
jc
junction to case
12.5 /L
Total Gate Charge
Q
g
V
GS
= 10V, I
D
= 4A, V
DD
= 100V
21
nC
Input Capacitance
C
iss
480
Reverse Transfer Capacitance
C
rss
V
DS
= 10V, V
GS
= 0V, f = 1MH
Z
50
pF
Output Capacitance
C
oss
160
Turn-On Time
t
on
I
D
= 2A,
60
120
ns
Turn-Off Time
t
off
R
L
= 50, V
GS
= 5V
120
240
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