221 West Industry Court
3
Deer Park, NY 11729
3
(631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
PRELIMINARY TECHNICAL DATA
DATA SHEET 4173, REV. A
10 KW, 3 Phase Module
For
Active Power Factor Correction
3 Phase Single Package
-55 to +150
O
C
IGBT Switching, 600V, 40A, VCE (on) =2.1V
Access to all IGBT Leads
FRED Diodes, 600V, 25A, trr=23ns, Qrr =112nC
Easy Heat Sink Mounting
High Current Terminals
Cost Effective
Low profile
Large Surface Area
Latest Generation IGBT Technology
Low Inductance
ELECTRICAL CHARACTERISTICS
(Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
P
P
A
A
R
R
A
A
M
M
E
E
T
T
E
E
R
R
S
S
Y
Y
M
M
B
B
O
O
L
L
M
M
I
I
N
N
T
T
Y
Y
P
P
M
M
A
A
X
X
U
U
N
N
I
I
T
T
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
I
C
= 250
A, V
GE
= 0V
BV
CES
600
-
-
V
Continuous Collector Current T
C
= 25
O
C
T
C
= 100
O
C
I
C
-
-
40
20
A
Pulsed Collector Current, 1mS
I
CM
-
-
160
A
Gate to Emitter Voltage
V
GE
-
-
+/-20
V
Gate-Emitter Leakage Current, V
GE
= +/-20V
I
GES
-
-
+/- 100
nA
Gate Threshold Voltage, I
C
=2mA
V
GE(TH)
3.0
-
6.0
V
PFC3M-10000
221 West Industry Court
3
Deer Park, NY 11729
3
(631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
PRELIMINARY TECHNICAL DATA
DATA SHEET 4173, REV. A
ELECTRICAL CHARACTERISTICS (continued)
(Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
Zero Gate Voltage Collector Current
V
CE
= 600 V, V
GE
=0V T
i
=25
o
C
V
CE
= 600 V, V
GE
=0V T
i
=150
o
C
I
CES
-
-
-
-
0.25
2.5
Ma
mA
Collector to Emitter Saturation Voltage,
I
C
= 20A, V
GE
= 15V, T
C
= 25
O
C
I
C
= 40A, V
GE
= 15V, T
C
= 25
O
C
I
C
= 20A, V
GE
= 15V, T
C
= 150
O
C
V
CE(SAT)
-
-
2.05
2.36
1.9
2.5
-
-
V
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
V
CE
= 30V, V
GE
= 0 V, f = 1 MHz
C
ies
C
oes
C
res
-
1900
140
35
-
pF
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Energy Loss
(T
j
= 150
O
C, I
C
= 20A, V
GE
= 15V, inductive load, V
CC
=
480V, R
G
= 10
t
d(on)
t
r
t
d(off)
t
f
E
ts
-
-
-
-
25
23
170
124
.85
-
-
-
-
nsec
mJ
Maximum Thermal Resistance
R
JC
-
-
1.77
o
C/W
FRED MAXIMUM RATINGS
All ratings are @ T
A
= 25
c unless otherwise specified
RATING
SYMBOL
MAX.
UNITS
CATHODE-TO-ANODE VOLTAGE
Vr
600
Volts
CONTINUOS FORWARD CURRENT (Tc=100
o
C)
I
F
25
Amps
SINGLE PULSE FORWARD CURRENT
I
FSM
225
Amps
MAXIMUN REPETITIVE FORWARD CURRENT
I
FRM
100
Amps
REVERSE RECOVERY TIME (I
f
= 1A, dI/dt = 200A/
sec, V
R
= 30V, T
j
=25
O
C)
(I
f
= 25A, dI/dt = 200A/
sec, V
R
= 200V, T
j
=25
O
C)
(I
f
= 25A, dI/dt = 200A/
sec, V
R
= 200V, T
j
=125
O
C)
t
rr
(typ)
t
rr
(max)
t
rr
(max)
23
75
160
nsec
nsec
nsec
MAXIMUM REVERSE RECOVERY CURRENT
(V
R
= 200V, I
F
= 25A, dI/dt= 200A / usec, T
j
=25
O
C)
(V
R
= 200V, I
F
= 25A, dI/dt= 200A / usec, T
j
=125
O
C)
I
RM
(typ)
I
RM
(max)
4.5
15
Amps
PFC3M-10000
221 West Industry Court
3
Deer Park, NY 11729
3
(631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
PFC3M-10000
PRELIMINARY TECHNICAL DATA
DATA SHEET 4173, REV. A
FRED MAXIMUM RATINGS (continued)
All ratings are @ T
A
= 25
c unless otherwise specified
Reverse Recovery Charge
(V
R
= 200V, I
F
= 25A, dI/dt= 200A / usec, T
j
=25
O
C)
(V
R
= 200V, I
F
= 25A, dI/dt= 200A / usec, T
j
=125
O
C)
Qrr1
Qrr2
112
1200
nC
MAXIMUM THERMAL RESISTANCE
R
JC
2.0
C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE
Top/Tstg
-55 to +
150
C
FRED ELECTRICAL CHARACTRISTICS
CHARACTRISTIC
SYMBOL
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP,
T
C
= 25
C (I
f
= 25 Amps)
T
C
= 25
C (I
f
= 50 Amps)
T
C
= 125
C (I
f
= 25 Amps)
V
FM
1.7
2.0
1.7
Volts
MAXIMUM REVERSE CURRENT PER LEG
T
C
= 25
C I
r
@ 600V PIV
T
C
= 125
C I
r
@ 480V PIV
I
RM
20
2000
A
LEAD INDUCTANCE
L
L
TBD
nH
JUNCTION CAPACITANCE
C
T
100
pF
Pin Number
Pin Description
A
AC IN, Phase A
B
AC IN, Phase B
C
AC IN, Phase C
N
DC Common
C1
Collector IGBT1/+Bridge 1
G1
Gate IGBT1
E1
Emitter IGBT1/-Bridge 1
C2
Collector IGBT2/+Bridge 2
G2
Gate IGBT2
E2
Emitter IGBT2/-Bridge 2
C3
Collector IGBT3/+Bridge 3
G3
Gate IGBT3
E3
Emitter IGBT3/-Bridge 3
221 West Industry Court
3
Deer Park, NY 11729
3
(631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
PFC3M-10000
PRELIMINARY TECHNICAL DATA
DATA SHEET 4173, REV. A
Mechanical Dimensions: In Inches
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
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