copyright@SemiWell Semiconductor Co., LTd., All rights reserved.
Absolute Maximum Ratings
( T
J
= 25C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(RMS)
R.M.S On-State Current
T
C
= 95 C
4.0
A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
30/33
A
I
2
t
I
2
t
4.5
A
2
s
P
GM
Peak Gate Power Dissipation
1.5
W
P
G(AV)
Average Gate Power Dissipation
0.1
W
I
GM
Peak Gate Current
1
A
V
GM
Peak Gate Voltage
7.0
V
T
J
Operating Junction Temperature
- 40 ~ 125
C
T
STG
Storage Temperature
- 40 ~ 150
C
Mass
0.26
g
Jun, 2003. Rev. 3
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
= 4 A )
High Commutation dv/dt
General Description
This device is new surface mounted package line up suitable
for space limited application such as low power AC switching
applications, such as fan speed, small light controllers and
home appliance equipment.
1/6
STR4A60
SemiWell
Semiconductor
2.T2
3.Gate
1.T1
Symbol
TO-126
3
2
1
Bi-Directional Triode Thyristor
Electrical Characteristics
Symbol
Items
Conditions
Ratings
Unit
Min.
Typ.
Max.
I
DRM
Repetitive Peak Off-State
Current
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 C
1.0
mA
V
TM
Peak On-State Voltage
I
T
= 6.0 A, Inst. Measurement
1.6
V
I
+
GT1
Gate Trigger Current
V
D
= 6 V, R
L
=10
20
mA
I
-
GT1
20
I
-
GT3
20
V
+
GT1
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
1.5
V
V
-
GT1
1.5
V
-
GT3
1.5
V
GD
Non-Trigger Gate Voltage
T
J
= 125 C, V
D
= 1/2 V
DRM
0.2
V
(dv/dt)c
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
= 125 C, [di/dt]c = -2.0 A/ms,
V
D
=2/3 V
DRM
5.0
V/
I
H
Holding Current
5.0
mA
R
th(j-c)
Thermal Impedance
Junction to case
3.5
C/W
STR4A60
2/6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
95
100
105
110
115
120
125
130
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
Allo
w
able Ca
s
e
Tempe
r
a
t
ur
e [
o
C]
RMS On-State Current [A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
= 90
o
= 150
o
= 60
o
= 30
o
= 180
o
= 120
o
Po
wer Diss
i
pati
on [W
]
RMS On-State Current [A]
-50
0
50
100
150
0.1
1
10
V
GT
(t
o
C)
V
+
GT1
V
_
GT1
V
_
GT3
V
GT
(2
5
o
C)
Junction Temperature [
o
C]
10
0
10
1
10
2
0
5
10
15
20
25
30
35
60Hz
50Hz
S
u
r
ge On-S
t
a
te Cu
r
r
en
t
[A
]
Time (cycles)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
10
-1
10
0
10
1
10
2
125
o
C
25
o
C
On-State
C
u
r
r
e
n
t
[
A
]
On-State Voltage [V]
10
1
10
2
10
3
10
-1
10
0
10
1
V
GD
(0.2V)
I
GM
(1
A
)
25
P
G(AV)
(0.1W)
P
GM
(1.5W)
V
GM
(7V)
Gate V
o
l
t
a
g
e
[V
]
Gate Current [mA]
STR4A60
3/6
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
Fig 3. On State Current vs.
Maximum Power Dissipation
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
2
360
: Conduction Angle
2
360
: Conduction Angle
-50
0
50
100
150
0.1
1
10
I
+
GT1
I
_
GT1
I
_
GT3
I
GT
(t
o
C)
I
GT
(25
o
C)
Junction Temperature [
o
C]
10
-2
10
-1
10
0
10
1
10
2
1
10
T
r
an
si
e
n
t
T
herm
a
l I
m
pedance
[
o
C/
W
]
Time (sec)
4/6
STR4A60
Fig 8. Transient Thermal Impedance
Fig 7. Gate Trigger Current vs.
Junction Temperature
Fig 9. Gate Trigger Characteristics Test Circuit
A
V
10
6V
R
G
A
V
10
6V
R
G
A
V
10
6V
R
G
Test Procedure
Test Procedure
Test Procedure
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